- Influence of Ga/N ratio on morphology, vacancies, and electrical transport in GaN grown by molecular beam epitaxy at high temperature
[作者:Koblmuller, G; Reurings, F; Tuomisto, F; Speck, JS,期刊:Applied Physics Letters, 页码:191915-191915 , 文章类型: Article,,卷期:2010年97-19]
- The effect of Ga/N flux ratio on surface morphology, incorporation of point defects and electrical transport properties of GaN films grown by plasma-assisted molecular beam epitaxy in a recently developed high-temperatur...
- Light-induced instability of an InGaZnO thin film transistor with and without SiOx passivation layer formed by plasma-enhanced-chemical-vapor-deposition
[作者:Chen, TC; Chang, TC; Hsieh, TY; Tsai, CT; Chen, SC; Lin, CS; Hung, MC; Tu, CH; Chang, JJ; Chen, PL,期刊:Applied Physics Letters, 页码:192103-192103 , 文章类型: Article,,卷期:2010年97-19]
- This paper investigates the illuminated behaviors of InGaZnO thin film transistors with and without a SiOx passivation. For the passivated device, more interface states were generated during SiOx passivation layer deposi...
- Spin-dependent processes in amorphous silicon-rich silicon-nitride
[作者:Lee, SY; Paik, SY; McCamey, DR; Hu, J; Zhu, F; Madan, A; Boehme, C,期刊:Applied Physics Letters, 页码:192104-192104 , 文章类型: Article,,卷期:2010年97-19]
- A study of spin-dependent charge carrier transitions in silicon-rich hydrogenated amorphous silicon-nitride (a-SiNx : H) p-i-n devices is presented. Pulsed electrically detected magnetic resonance allows us to determine ...
- The effect of La in InZnO systems for solution-processed amorphous oxide thin-film transistors
[作者:Kim, DN; Kim, DL; Kim, GH; Kim, SJ; Rim, YS; Jeong, WH; Kim, HJ,期刊:Applied Physics Letters, 页码:192105-192105 , 文章类型: Article,,卷期:2010年97-19]
- Solution-processed thin-film transistors (TFTs) with La-In-Zn-O (LIZO) as an active channel layer were fabricated with various mole ratios of La. The La3+ additive affected the metal-oxygen bond and made the band gap of ...
- The origin of oxygen in oxide thin films: Role of the substrate
[作者:Schneider, CW; Esposito, M; Marozau, I; Conder, K; Doebeli, M; Hu, Y; Mallepell, M; Wokaun, A; Lippert, T,期刊:Applied Physics Letters, 页码:192107-192107 , 文章类型: Article,,卷期:2010年97-19]
- During the growth of oxide thin films by pulsed laser deposition, a strong oxygen substrate-to-film transfer has been experimentally observed for SrTiO3 and LaAlO3 thin films epitaxially grown on O-18 exchanged SrTiO3 an...
- Cathodoluminescence and photoluminescence study on AlGaN layers grown with SiNx interlayers
[作者:Neuschl, B; Fujan, KJ; Feneberg, M; Tischer, I; Thonke, K; Forghani, K; Klein, M; Scholz, F,期刊:Applied Physics Letters, 页码:192108-192108 , 文章类型: Article,,卷期:2010年97-19]
- In this study the optical properties of high quality c-plane AlGaN layers grown on c-plane sapphire by metal organic vapor phase epitaxy have been investigated. Submonolayers of SiNx have been deposited in situ to reduce...
- Double quantum dot with tunable coupling in an enhancement-mode silicon metal-oxide semiconductor device with lateral geometry
[作者:Tracy, LA; Nordberg, EP; Young, RW; Pinilla, CB; Stalford, HL; Ten Eyck, GA; Eng, K; Childs, KD; Wendt, JR; Grubbs, RK; Stevens, J; Lilly, MP; Eriksson, MA; Carroll, MS,期刊:Applied Physics Letters, 页码:192110-192110 , 文章类型: Article,,卷期:2010年97-19]
- We present transport measurements of a tunable silicon metal-oxide semiconductor double quantum dot device with lateral geometry. The experimentally extracted gate-to-dot capacitances show that the device is largely symm...
- GaSb/GaP compliant interface for high electron mobility AlSb/InAs heterostructures on (001) GaP
[作者:El Kazzi, S; Desplanque, L; Coinon, C; Wang, Y; Ruterana, P; Wallart, X,期刊:Applied Physics Letters, 页码:192111-192111 , 文章类型: Article,,卷期:2010年97-19]
- We report on the epitaxial growth of an AlSb/InAs heterostructure on a (001) GaP substrate. We investigate the conditions for the most efficient relaxation of GaSb islands on GaP. In particular, we show that the GaP surf...
- Optical alignment of the exciton in ZnO nanoparticles
[作者:Chassaing, PM; Balocchi, A; Amand, T; Saint-Macary, L; Kahn, ML; Chaudret, B; Marie, X,期刊:Applied Physics Letters, 页码:192112-192112 , 文章类型: Article,,卷期:2010年97-19]
- The exciton spin dynamics of zinc oxide nanoparticles (NPs) of sizes ranging from 2.3 to 6.6 nm has been studied by time-resolved photoluminescence. Following a quasiresonant linearly polarized excitation, the exciton ph...
- High-quality epitaxial CoFe/Si(111) heterostructures fabricated by low-temperature molecular beam epitaxy
[作者:Maeda, Y; Hamaya, K; Yamada, S; Ando, Y; Yamane, K; Miyao, M,期刊:Applied Physics Letters, 页码:192501-192501 , 文章类型: Article,,卷期:2010年97-19]
- We demonstrate atomically controlled heterojunctions consisting of ferromagnetic CoFe alloys and silicon (Si) using low-temperature molecular beam epitaxy with a good atomic matching at the (111) plane. The saturation ma...
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