- Morphology of epitaxial SrTiO3/Si (001) determined using three-dimensional diffraction profile analysis
[作者:Segal, Y; Reiner, JW; Zhang, Z; Ahn, CH; Walker, FJ,期刊:Journal Of Vacuum Science & Technology B, 页码:C5B1-C5B4 , 文章类型: Proceedings Paper,,卷期:2010年28-4]
- Large scale features of epitaxial films, such as terrace structure, strain distribution, and grain shape, can have a substantial effect on device properties. The diffraction spot shape captures the average large scale st...
- Fabrication of submicron-sized features in InP/InGaAsP/AlGaInAs quantum well heterostructures by optimized inductively coupled plasma etching with Cl-2/Ar/N-2 chemistry
[作者:Dylewicz, R; De La Rue, RM; Wasielewski, R; Mazur, P; Mezosi, G; Bryce, AC,期刊:Journal Of Vacuum Science & Technology B, 页码:882-890 , 文章类型: Article,,卷期:2010年28-4]
- Inductively coupled plasma dry etching for the fabrication of fine-pitch patterns in a wide range of InP-based materials has been developed. The effect of plasma chemistry (the N-2 content in the total Cl-2/Ar/N-2 gas mi...
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