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文章名     作者     期刊名     摘要     卷     期         如果没有找到您所需要的文献，请点击 ——此处申请     共115条记录   Single-crystal gold tip for tip-enhanced Raman spectroscopy [作者：Roy, D; Williams, CM; Mingard, K,期刊：Journal Of Vacuum Science & Technology B, 页码：631-634 , 文章类型： Article，,卷期：2010年28-3] The authors have investigated the structures of gold tips suitable for tip-enhanced Raman spectroscopy (TERS) fabricated by the electrochemical etching technique [C. Williams and D. Roy, J. Vac. Sci. Technol. B 26, 1761 ... Removing GaAs substrate by nitric acid solution [作者：Li, CC; Guan, BL; Chuai, DX; Guo, X; Shen, GD,期刊：Journal Of Vacuum Science & Technology B, 页码：635-637 , 文章类型： Article，,卷期：2010年28-3] A two-step removing GaAs substrate technique by using HNO3 solution is reported. In the authors' experiments, as compared with other ratios, the etch rate of HNO3:H2O2:H2O=1:6:1 is faster. In addition, the etched surface... Fabrication of regular arrays of gold nanospheres by thermal transformation of electroless-plated films [作者：Ahn, W; Blake, P; Shultz, J; Ware, ME; Roper, DK,期刊：Journal Of Vacuum Science & Technology B, 页码：638-642 , 文章类型： Editorial Material，,卷期：2010年28-3] Rectangular lattices of gold nanospheres have been fabricated by thermally annealing Au nanopillars and nanocylinders deposited via electroless plating onto indium-tin-oxide glass substrates in a novel method. The substr... Resurrecting dirty atomic force microscopy calibration standards [作者：Chernoff, DA; Sherman, R,期刊：Journal Of Vacuum Science & Technology B, 页码：643-647 , 文章类型： Editorial Material，,卷期：2010年28-3] Cleanliness of atomic force microscopy samples before imaging has always posed questions for users. The same is true for height calibration standards. In this shop note, the authors discuss using CO2 snow cleaning as a w... Experimental studies of dose retention and activation in fin field-effect-transistor-based structures (vol 28, pg C1H5, 2010) [作者：Mody, J; Duffy, R; Eyben, P; Goossens, J; Moussa, A; Polspoel, W; Berghmans, B; van Dal, MJH; Pawlak, BJ; Kaiser, M; Weemaes, RGR; Vandervorst, W,期刊：Journal Of Vacuum Science & Technology B, 页码：648-648 , 文章类型： Correction，,卷期：2010年28-3] PAPERS FROM THE 26th NORTH AMERICAN CONFERENCE ON MOLECULAR BEAM EPITAXY PREFACE [作者：Shen, AD,期刊：Journal Of Vacuum Science & Technology B, 页码：648-648 , 文章类型： Editorial Material，,卷期：2010年28-3] Growth and structural characterization of epitaxial (La1-xLux)(2)O-3 layers grown on Si(111) [作者：Watahiki, T; Grosse, F; Kaganer, VM; Proessdorf, A; Braun, W,期刊：Journal Of Vacuum Science & Technology B, 页码：648-648 , 文章类型： Proceedings Paper，,卷期：2010年28-3] The authors study the growth and structure of epitaxial (La1-xLux)(2)O-3 alloy layers on Si(111) in either homogeneous or digital alloy form. Layer-by-layer growth is achieved by thermal evaporation from La and Lu oxides... Optical and electrical quality improvements of undoped InAs/GaSb superlattices [作者：Haugan, HJ; Ullrich, B; Grazulis, L; Elhamri, S; Brown, GJ; Mitchel, WC,期刊：Journal Of Vacuum Science & Technology B, 页码：648-648 , 文章类型： Proceedings Paper，,卷期：2010年28-3] The performance and operating temperature of infrared (IR) detectors are largely limited by thermal generation and noise processes in the active region of the device. Particularly, excess background charge carriers enhan... Growth, characterization, and uniformity analysis of 200 mm wafer-scale SrTiO3/Si [作者：Gu, X; Lubyshev, D; Batzel, J; Fastenau, JM; Liu, WK; Pelzel, R; Magana, JF; Ma, Q; Rao, VR,期刊：Journal Of Vacuum Science & Technology B, 页码：648-648 , 文章类型： Proceedings Paper，,卷期：2010年28-3] SrTiO3/Si wafers with high crystalline quality and smooth surface morphology are highly desirable for developing novel devices such as next generation dynamic random access memory and oxide field effect devices. Very hig... Neutron transmutation doping effects in GaN [作者：Polyakov, AY; Smirnov, NB; Govorkov, AV; Kolin, NG; Merkurisov, DI; Boiko, VM; Korulin, AV; Pearton, SJ,期刊：Journal Of Vacuum Science & Technology B, 页码：608-612 , 文章类型： Article，,卷期：2010年28-3] The effects of neutron transmutation doping were studied for undoped (residual donor concentrations < 10(15) cm(-3)) GaN films grown by metalorganic chemical vapor deposition. After irradiation with reactor neutrons (equ... Structural analysis of thin epitaxial Y2O3 films on sapphire [作者：Webster, SE; Kumaran, R; Penson, S; Tiedje, T,期刊：Journal Of Vacuum Science & Technology B, 页码：648-648 , 文章类型： Proceedings Paper，,卷期：2010年28-3] High structural quality yttrium oxide films have been grown on R-plane sapphire by molecular beam epitaxy. X-ray diffraction measurements showed clear pendelloumlsung fringes and sharp peaks. X-ray measurements indicate ... Molecular beam epitaxy as a method for the growth of freestanding zinc-blende (cubic) GaN layers and substrates [作者：Novikov, SV; Zainal, N; Akimov, AV; Staddon, CR; Kent, AJ; Foxon, CT,期刊：Journal Of Vacuum Science & Technology B, 页码：648-648 , 文章类型： Proceedings Paper，,卷期：2010年28-3] The authors have studied the growth of bulk, freestanding zinc-blende (cubic) GaN layers by plasma-assisted molecular beam epitaxy (PA-MBE). They have established that the best structural properties of freestanding zinc-... Optimization of the structural and optical quality of InN nanowires on Si(111) by molecular beam epitaxy [作者：Chang, YL; Li, F; Mi, Z,期刊：Journal Of Vacuum Science & Technology B, 页码：648-648 , 文章类型： Proceedings Paper，,卷期：2010年28-3] The authors report on the growth and characterization of high quality InN nanowires on Si(111) by radio frequency plasma-assisted molecular beam epitaxy. InN nanowires with nontapered morphology were achieved with the us... Molecular beam epitaxy of GaNAs alloys with high As content for potential photoanode applications in hydrogen production [作者：Novikov, SV; Staddon, CR; Foxon, CT; Yu, KM; Broesler, R; Hawkridge, M; Liliental-Weber, Z; Walukiewicz, W; Denlinger, J; Demchenko, I,期刊：Journal Of Vacuum Science & Technology B, 页码：648-648 , 文章类型： Proceedings Paper，,卷期：2010年28-3] The authors have succeeded in growing GaN1-xAsx alloys over a large composition range (0 < x < 0.8) by plasma-assisted molecular beam epitaxy. The enhanced incorporation of As was achieved by growing the films with high ... Broadening of intersubband transitions in InGaN/AlInN multiquantum wells [作者：Cywinski, G; Gladysiewicz, M; Kudrawiec, R; Krysko, M; Feduniewicz-Zmuda, A; Siekacz, M; Sawicka, M; Wolny, P; Smalc-Koziorowska, J; Nevou, L; Tchernycheva, M; Julien, FH; Misiewicz, J; Skierbiszewski, C,期刊：Journal Of Vacuum Science & Technology B, 页码：648-648 , 文章类型： Proceedings Paper，,卷期：2010年28-3] In this article, the authors report on growth of InGaN/AlInN multiquantum wells (MQWs) by rf-plasma-assisted molecular beam epitaxy on (0001) GaN substrates. Intersubband transitions in InGaN/AlInN MQWs with widths varyi... Growth and luminescence characterization of dilute InPN alloys grown by molecular beam epitaxy [作者：Umeno, K; Furukawa, Y; Urakami, N; Mitsuyoshi, S; Yonezu, H; Wakahara, A; Ishikawa, F; Kondow, M,期刊：Journal Of Vacuum Science & Technology B, 页码：648-648 , 文章类型： Proceedings Paper，,卷期：2010年28-3] The authors have investigated the growth and luminescence properties of InPN alloys grown by solid-source molecular-beam epitaxy (MBE). The N composition increases with decreasing growth rate, P-2/In flux ratio, and grow...