- Effect of high substrate bias and hydrogen and nitrogen incorporation on density of states and field-emission threshold in tetrahedral amorphous carbon films
[作者:Panwar, OS; Khan, MA; Satyanarayana, BS; Bhattacharyya, R; Mehta, BR; Kumar, S; Ishpal,期刊:Journal Of Vacuum Science & Technology B, 页码:411-422 , 文章类型: Article,,卷期:2010年28-2]
- This article reports the influence of substrate bias during growth and of hydrogen and nitrogen incorporation on density of states [N (E-F)] and field-emission threshold (Eturn-on) in tetrahedral amorphous carbon (ta-C) ...
- Photo- and thermionic emission from potassium-intercalated carbon nanotube arrays
[作者:Westover, TL; Franklin, AD; Cola, BA; Fisher, TS; Reifenberger, RG,期刊:Journal Of Vacuum Science & Technology B, 页码:423-434 , 文章类型: Article,,卷期:2010年28-2]
- Carbon nanotubes (CNTs) are promising candidates to create new thermionic- and photoemission materials. Intercalation of CNTs with alkali metals, such as potassium, greatly reduces their work functions, and the low elect...
- Nanometer-scale distribution of field emission current from the arc-prepared carbon thin film
[作者:Nagashima, S; Fujita, S; Adachi, K; Yamada, Y; Sasaki, M,期刊:Journal Of Vacuum Science & Technology B, 页码:C2A13-C2A18 , 文章类型: Proceedings Paper,,卷期:2010年28-2]
- In order to clarify the mechanism of low-macroscopic-field (LMF) electron emission from carbon related materials, atomistic properties including local tunneling barrier height (LBH) and field emission (FE) current distri...
- Cooling power of field emission from the n-type silicon semiconductor
[作者:Chung, MS; Yoon, BG; Mayer, A; Weis, BL; Miskovsky, NM; Cutler, PH,期刊:Journal Of Vacuum Science & Technology B, 页码:C2A19-C2A23 , 文章类型: Proceedings Paper,,卷期:2010年28-2]
- The authors have theoretically investigated the cooling effect of field emission from n-type semiconductors. By considering the outgoing and incoming electrons in the region of emission, they make the numerical calculati...
- Degradation of 150 nm mushroom gate InAlAs/InGaAs metamorphic high electron mobility transistors during dc stressing and thermal storage
[作者:Chen, KH; Chang, CY; Leu, LC; Lo, CF; Chu, BH; Pearton, SJ; Ren, F,期刊:Journal Of Vacuum Science & Technology B, 页码:365-370 , 文章类型: Article,,卷期:2010年28-2]
- Reliability studies of InAlAs/InGaAs metamorphic high electron mobility transistors (MHEMTs) grown on GaAs substrates for high frequency/power applications are reported. The MHEMTs were stressed at a drain voltage of 3 V...
- Influence of C4F8/Ar-based etching and H-2-based remote plasma ashing processes on ultralow k materials modifications
[作者:Kuo, MS; Hua, XF; Oehrlein, GS; Ali, A; Jiang, P; Lazzeri, P; Anderle, M,期刊:Journal Of Vacuum Science & Technology B, 页码:284-294 , 文章类型: Article,,卷期:2010年28-2]
- The authors evaluated photoresist (PR) stripping processes that are compatible with ultralow dielectric constant (ULK) materials using H-2-based remote plasmas generated in an inductively coupled plasma reactor. The mate...
|