- Fermi-level depinning and hole injection induced two-dimensional electron related radiative emissions from a forward biased Ni/Au-AlGaN/GaN Schottky diode
[作者:Li, BK; Wang, MJ; Chen, KJ; Wang, JN,期刊:Applied Physics Letters, 页码:232111-232111 , 文章类型: Article,,卷期:2009年95-23]
- Electroluminescence (EL) from a forward biased Ni/Au-AlGaN/GaN Schottky diode was observed and studied. According to the EL spectra, which were dominated by the GaN near band edge emissions, holes were injected into the ...
- Observation of metal precipitates at prebreakdown sites in multicrystalline silicon solar cells
[作者:Kwapil, W; Gundel, P; Schubert, MC; Heinz, FD; Warta, W; Weber, ER; Goetzberger, A; Martinez-Criado, G,期刊:Applied Physics Letters, 页码:232113-232113 , 文章类型: Article,,卷期:2009年95-23]
- The local prebreakdown behavior of a damage etched multicrystalline silicon solar cell produced from virgin grade feedstock was characterized. At the position of micrometer-scaled prebreakdown sites, which correlate with...
- Energy- and density-dependent dynamics of photoexcited carriers in InN films
[作者:Fukunaga, K; Hashimoto, M; Kunugita, H; Kamimura, J; Kikuchi, A; Kishino, K; Ema, K,期刊:Applied Physics Letters, 页码:232114-232114 , 文章类型: Article,,卷期:2009年95-23]
- Fast and slow photocarrier dynamics in indium nitride films have been investigated using femtosecond transient measurements at room temperature. The behavior of the decay dynamics is found to be strongly dependent on the...
- Optically active defects in an InAsP/InP quantum well monolithically grown on SrTiO3(001)
[作者:Cheng, J; Aviles, T; El Akra, A; Bru-Chevallier, C; Largeau, L; Patriarche, G; Regreny, P; Benamrouche, A; Robach, Y; Hollinger, G; Saint-Girons, G,期刊:Applied Physics Letters, 页码:232116-232116 , 文章类型: Article,,卷期:2009年95-23]
- The optical properties of an InAsP/InP quantum well grown on a SrTiO3(001) substrate are analyzed. At 13 K, the photoluminescence yield of the well is comparable to that of a reference well grown on an InP substrate. Inc...
- Electric breakdown in ultrathin MgO tunnel barrier junctions for spin-transfer torque switching
[作者:Schafers, M; Drewello, V; Reiss, G; Thomas, A; Thiel, K; Eilers, G; Munzenberg, M; Schuhmann, H; Seibt, M,期刊:Applied Physics Letters, 页码:232119-232119 , 文章类型: Article,,卷期:2009年95-23]
- Magnetic tunnel junctions for spin-transfer torque (STT) switching are prepared to investigate the dielectric breakdown. Intact and broken tunnel junctions are characterized by transport measurements prior to transmissio...
- Bidirectional magnetic nanowire shift register
[作者:O'Brien, L; Read, DE; Zeng, HT; Lewis, ER; Petit, D; Cowburn, RP,期刊:Applied Physics Letters, 页码:232502-232502 , 文章类型: Article,,卷期:2009年95-23]
- We experimentally demonstrate a shift register based on an open-ended chain of ferromagnetic NOT gates which can support bidirectional data flow. Up to eight data bits are electrically input to the device, stored for ext...
- Relation between critical current of domain wall motion and wire dimension in perpendicularly magnetized Co/Ni nanowires
[作者:Fukami, S; Nakatani, Y; Suzuki, T; Nagahara, K; Ohshima, N; Ishiwata, N,期刊:Applied Physics Letters, 页码:232504-232504 , 文章类型: Article,,卷期:2009年95-23]
- We investigated the relation between critical current of domain wall motion and wire dimension by using perpendicularly magnetized Co/Ni nanowires with different widths and thicknesses. The critical current, I-c, became ...
- Coercivity tuning in Co/Pd multilayer based bit patterned media
[作者:Hellwig, O; Hauet, T; Thomson, T; Dobisz, E; Risner-Jamtgaard, JD; Yaney, D; Terris, BD; Fullerton, EE,期刊:Applied Physics Letters, 页码:232505-232505 , 文章类型: Article,,卷期:2009年95-23]
- In order to adjust the reversal field of high anisotropy [Co(2.8 angstrom/Pd(9 angstrom)](8) bit patterned media (BPM), one may increase the individual Co thickness to change the overall anisotropy or alternatively combi...
- In situ observation of secondary phase formation in Fe implanted GaN annealed in low pressure N-2 atmosphere
[作者:Talut, G; Grenzer, J; Reuther, H; Shalimov, A; Baehtz, C; Novikov, D; Walz, B,期刊:Applied Physics Letters, 页码:232506-232506 , 文章类型: Article,,卷期:2009年95-23]
- The formation of secondary phases in Fe implanted GaN upon annealing in low pressure N-2-atmosphere was detected by means of in situ x-ray diffraction and confirmed by magnetization measurements. A repeatable phase chang...
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