- Advances in optical carrier profiling through high-frequency modulated optical reflectance
[作者:Bogdanowicz, J; Dortu, F; Clarysse, T; Vandervorst, W; Shaughnessy, D; Salnik, A; Nicolaides, L; Opsal, J,期刊:Journal Of Vacuum Science & Technology B, 页码:310-316 , 文章类型: Article,,卷期:2008年26-1]
- As indicated by the ITRS roadmap, obtaining accurate information on the electrically active dopant profile for sub-30-nm structures is a key issue. Presently, however, there is no conventional, probe-based (destructive) ...
- Insights in junction photovoltage based sheet resistance measurements for advanced complementary metal-oxide semiconductor
[作者:Clarysse, T; Moussa, A; Zangerle, T; Schaus, F; Vandervorst, W; Faifer, V; Current, M,期刊:Journal Of Vacuum Science & Technology B, 页码:420-424 , 文章类型: Article,,卷期:2008年26-1]
- Earlier work has clearly shown that only a very few tools are able to measure reliably sheet resistances on advanced complementary metal-oxide semiconductor (CMOS) structures. One of these promising techniques is the jun...
- Antimony for n-type metal oxide semiconductor ultrashallow junctions in strained Si: A superior dopant to arsenic?
[作者:Bennett, NS; Smith, AJ; Gwilliam, RM; Webb, RP; Sealy, BJ; Cowern, NEB; O'Reilly, L; McNally, PJ,期刊:Journal Of Vacuum Science & Technology B, 页码:391-395 , 文章类型: Article,,卷期:2008年26-1]
- The creation of stable, highly conductive ultrashallow junctions in strained Si is a key requirement for future Si based devices. It is shown that in the presence of tensile strain, Sb becomes a strong contender to repla...
- Defects in Ge and Si caused by 1 MeV Si+ implantation
[作者:Hickey, DP; Bryan, ZL; Jones, KS; Elliman, RG; Haller, EE,期刊:Journal Of Vacuum Science & Technology B, 页码:425-429 , 文章类型: Article,,卷期:2008年26-1]
- Cross-sectional transmission electron microscopy was used to study defect formation and evolution in the (001) Ge and Si wafers implanted with 1 MeV Si+ and 40 keV Si+ at a dose of 1x10(14) cm(-2). As expected, upon anne...
- P implantation into preamorphized germanium and subsequent annealing: Solid phase epitaxial regrowth, P diffusion, and activation
[作者:Posselt, M; Schmidt, B; Anwand, W; Grotzschel, R; Heera, V; Mucklich, A; Wundisch, C; Skorupa, W; Hortenbach, H; Gennaro, S; Bersani, M; Giubertoni, D; Moller, A; Bracht, H,期刊:Journal Of Vacuum Science & Technology B, 页码:430-434 , 文章类型: Article,,卷期:2008年26-1]
- Phosphorus implantation (30 keV, 3x10(15) cm(-2)) into preamorphized Ge and subsequent rapid thermal or flash lamp annealing is investigated. During annealing a significant P diffusion in amorphous Ge is not observed. Ho...
- Dissolution of extended defects in strained silicon
[作者:Moroz, V; Martin-Bragado, I; Felch, S; Nouri, F; Olsen, C; Jones, KS,期刊:Journal Of Vacuum Science & Technology B, 页码:439-442 , 文章类型: Article,,卷期:2008年26-1]
- The experimental and theoretical analyses performed in this work provide an insight into the impact of external stress on extended defects that form in silicon after ion implantation. It is shown experimentally that the ...
- Low energy electron-excited nanoscale luminescence spectroscopy studies of intrinsic defects in HfO2 and SiO2-HfO2-SiO2-Si stacks
[作者:Strzhemechny, YM; Bataiev, M; Tumakha, SP; Goss, SH; Hinkle, CL; Fulton, CC; Lucovsky, G; Brillson, LJ,期刊:Journal Of Vacuum Science & Technology B, 页码:232-243 , 文章类型: Article,,卷期:2008年26-1]
- Low energy electron-excited nanoscale (LEEN) luminescence spectroscopy and secondary ion mass spectrometry have been used to probe the defect states and chemical composition in as-deposited relatively thick (similar to 1...
- Novel photocurable epoxy siloxane polymers for photolithography and imprint lithography applications
[作者:Wang, PI; Nalamasu, O; Ghoshal, R; Schaper, CD; Li, A; Lu, TM,期刊:Journal Of Vacuum Science & Technology B, 页码:244-248 , 文章类型: Article,,卷期:2008年26-1]
- Polyset epoxy siloxane (PES) polymer is ultraviolet (UV) curable with photoinitiator chemistry based on cationic polymerization. In the present work the authors have investigated the photodefinition characteristics of th...
- Ultrashallow junctions formed by C coimplantation with spike plus submelt laser annealing
[作者:Felch, SB; Collart, E; Parihar, V; Thirupapuliyur, S; Schreutelkamp, R; Pawlak, BJ; Hoffmann, T; Severi, S; Eyben, P; Vandervorst, W; Noda, T,期刊:Journal Of Vacuum Science & Technology B, 页码:281-285 , 文章类型: Article,,卷期:2008年26-1]
- A leading candidate for the formation of the ultrashallow junctions needed for L-g <= 45 nm devices is the combination of coimplantation of a diffusion-retarding species such as carbon with a high temperature, millisecon...
- Realization of ultrashallow junctions by plasma immersion ion implantation and laser annealing
[作者:Vervisch, V; Etienne, H; Torregrosa, F; Roux, L; Ottaviani, L; Pasquinelli, M; Sarnet, T; Delaporte, P,期刊:Journal Of Vacuum Science & Technology B, 页码:286-292 , 文章类型: Article,,卷期:2008年26-1]
- To achieve the requirements of the 45 nm ITRS technology node and beyond, beamline implantation has reached its limit in terms of low energies. Plasma immersion ion implantation (PIII) is thus an alternative doping techn...
- Optimum activation and diffusion with a combination of spike and flash annealing
[作者:Paul, S; Lerch, W; Chan, J; Mccoy, S; Gelpey, J; Cristiano, F; Severac, F; Fazzini, PF; Bolze, D,期刊:Journal Of Vacuum Science & Technology B, 页码:293-297 , 文章类型: Article,,卷期:2008年26-1]
- Different shallow n-type and p-type dopants were annealed with spike, flash, and a combination of spike+flash or vice versa to find the optimum annealing condition for both activation and diffusion. The implant condition...
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