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文章名     作者     期刊名     摘要     卷     期         如果没有找到您所需要的文献，请点击 ——此处申请     共62条记录   Morphology of inkjet printed 6,13 bis(tri-isopropylsilylethynyl) pentacene on surface-treated silica [作者：Wang, XH; Xiong, XF; Qiu, LZ; Lv, GQ,期刊：Journal Of Vacuum Science & Technology B, 页码：21206-21206 , 文章类型： Article，,卷期：2012年30-2] The soluble small molecule organic semiconductor, 6,13 bis(tri-isopropylsilylethynyl) pentacene, is inkjet printed on thermally grown silicon dioxide via an orthodichlorobenzene solvent. This paper studies the effect of ... Scanning tunneling microscope-based local electroluminescence spectroscopy of p-AlGaAs/i-GaAs/n-AlGaAs double heterostructure [作者：Watanabe, K; Ichikawa, M; Nakamura, Y; Kuboya, S; Katayama, R; Onabe, K,期刊：Journal Of Vacuum Science & Technology B, 页码：21802-21802 , 文章类型： Article，,卷期：2012年30-2] Local characterization of electroluminescence (EL) from working light-emitting devices is a key to developing and improving their EL properties. The authors developed a scanning tunneling microscope- (STM-) EL technique ... Study of Ti etching and selectivity mechanism in fluorocarbon plasmas for dielectric etch [作者：Weilnboeck, F; Bartis, E; Shachar, S; Oehrlein, GS; Farber, D; Lii, T; Lenox, C,期刊：Journal Of Vacuum Science & Technology B, 页码：21804-21804 , 文章类型： Article，,卷期：2012年30-2] The authors studied the behavior of Ti hardmasks in CF4/Ar and C4F8/Ar discharges using conditions relevant to pattern transfer processes into organosilicate glass (OSG), a reference low-k material investigated in parall... Advanced nanodiamond emitter with pyramidal tip-on-pole structure for emission self-regulation [作者：Wisitsora-at, A; Hsu, SH; Kang, WP; Davidson, JL; Tuantranont, A,期刊：Journal Of Vacuum Science & Technology B, 页码：22204-22204 , 文章类型： Article，,卷期：2012年30-2] In this paper, we report an innovative nanodiamond field emitter structure consisting of an individual pyramidal tip sitting on top of a ballast resistor "pole." The tip-on-pole nanodiamond structures are fabricated by a... Magnetophoretic assembly and printing of nanowires [作者：Wright, AC; Faulkner, M,期刊：Journal Of Vacuum Science & Technology B, 页码：21603-21603 , 文章类型： Article，,卷期：2012年30-2] Nanowires are a well-established class of materials covering both metals and semiconductors. Although the synthesis of nanowires has been highly developed, their manipulation into specific device structures has lagged be... Planar-localized surface plasmon resonance device by block-copolymer and nanoimprint lithography fabrication methods [作者：Yang, CYP; Yang, EL; Steinhaus, CA; Liu, CC; Nealey, PF; Skinner, JL,期刊：Journal Of Vacuum Science & Technology B, 页码：26801-26801 , 文章类型： Article，,卷期：2012年30-2] The authors report on the integration of delocalized surface plasmon resonances (SPRs) and localized surface plasmon resonances (LSPRs) on a single device. The submicron SPR device was fabricated with nanoimprint lithogr... Suppressed phase separation in thick GaInAsSb layers across the compositional range grown by molecular beam epitaxy for 1.7-4.9 mu m infrared materials [作者：Yildirim, A; Prineas, JP,期刊：Journal Of Vacuum Science & Technology B, 页码：02B104-02B104 , 文章类型： Article，,卷期：2012年30-2] Thick 2 um Ga1-xInxAsySb1-y layers lattice-matched to (100)-GaSb were grown by molecular beam epitaxy across the compositional range x = 0 to 1. By lowering the growth temperature to the 410 - 450 C range, phase separati... Molecular beam epitaxy growth of AlGaN quantum wells on 6H-SiC substrates with high internal quantum efficiency [作者：Zhang, W; Nikiforov, AY; Thomidis, C; Woodward, J; Sun, H; Kao, CK; Bhattarai, D; Moldawer, A; Zhou, L; Smith, DJ; Moustakas, TD,期刊：Journal Of Vacuum Science & Technology B, 页码：02B119-02B119 , 文章类型： Article，,卷期：2012年30-2] The authors report the development of high internal quantum efficiency AlN/AlGaN/AlN double heterostructures and AlGaN/AlN multiple quantum wells (MQWs) grown on 6H-SiC and 4H-SiC substrates of various miscuts by plasma-... Probing temporal evolution of extreme ultraviolet assisted contamination on Ru mirror by x-ray photoelectron spectroscopy [作者：Al-Ajlony, A; Kanjilal, A; Catalfano, M; Fields, M; Harilal, SS; Hassanein, A; Rice, B,期刊：Journal Of Vacuum Science & Technology B, 页码：21601-21601 , 文章类型： Article，,卷期：2012年30-2] Extreme ultraviolet (EUV) radiation mediated carbon contamination and oxidation of the Ru mirror surface, and the corresponding impact on reflectivity were studied. In particular, time-dependent systematic decrease in EU... Behavioral model for electrical response and strain sensitivity of nanotube-based nanocomposite materials [作者：Amini, A; Bahreyni, B,期刊：Journal Of Vacuum Science & Technology B, 页码：22001-22001 , 文章类型： Article，,卷期：2012年30-2] An algorithm to study the electrical conductivity of nanocomposite layers, made by dispersing nanotubes inside a polymer structure, is proposed. Conduction is modeled by following the path of electric current through the... Characterization of carbon nanotube film-silicon Schottky barrier photodetectors [作者：An, YB; Rao, H; Bosman, G; Ural, A,期刊：Journal Of Vacuum Science & Technology B, 页码：21805-21805 , 文章类型： Article，,卷期：2012年30-2] The authors fabricate vertical geometry single-walled carbon nanotube (CNT) film/p-type silicon Schottky barrier photodetectors, where the CNT film acts as the transparent metal and silicon as the active semiconductor. T... MBE growth and characterization of Mn-doped InN [作者：Chai, JH; Myers, TH; Song, YW; Reeves, RJ; Linhart, WM; Morris, RJH; Veal, TD; Dowsett, MG; McConville, CF; Durbin, SM,期刊：Journal Of Vacuum Science & Technology B, 页码：02B124-02B124 , 文章类型： Article，,卷期：2012年30-2] The majority of InN doping studies have primarily focused on Mg, as it has previously been used to successfully realize p-type GaN. Here, we consider an alternative dopant-Mn-as a possible acceptor candidate in InN. Magn... Optimization of Ohmic metal contacts for advanced GaAs-based CMOS device [作者：Chang, WH; Chiang, TH; Lin, TD; Chen, YH; Wu, KH; Huang, TS; Hong, M; Kwo, J,期刊：Journal Of Vacuum Science & Technology B, 页码：02B123-02B123 , 文章类型： Article，,卷期：2012年30-2] Ohmic contact resistivity of a nongold Pd/Ge/Ti/Pt on highly doped molecular beam epitaxy grown n-GaAs and In0.2Ga0.8As/GaAs (similar to 2 x 10(18) cm(-3)) has been investigated by varying Pd/Ge thicknesses and rapid the... Characteristic comparison of AlGaN/GaN enhancement-mode HEMTs with CHF3 and CF4 surface treatment [作者：Chen, CH; Yang, CW; Chiu, HC; Fu, JS,期刊：Journal Of Vacuum Science & Technology B, 页码：21201-21201 , 文章类型： Article，,卷期：2012年30-2] In this study, enhancement-mode (E-mode) AlGaN/GaN HEMTs that underwent CHF3 and CF4 plasma treatment beneath the gate metal were fabricated. These treatments were applied because, although previous studies have formed A...