- The charge trapping characteristics of Si3N4 and Al2O3 layers on amorphous-indium-gallium-zinc oxide thin films for memory application
[作者:Jung, JS; Rha, SH; Kim, UK; Chung, YJ; Jung, YS; Choi, JH; Hwang, CS,期刊:Applied Physics Letters, 页码:183503-183503 , 文章类型: Article,,卷期:2012年100-18]
- The charge trapping characteristics of 30-nm-thick Si3N4 and 3-nm-thick Al2O3 layers between amorphous In-Ga-Zn-O thin films and 100-nm-thick blocking oxides made of thermal SiO2 were examined. The Si3N4 layer showed sev...
- Contactless electroreflectance studies of Fermi level position on c-plane GaN surface grown by molecular beam epitaxy and metalorganic vapor phase epitaxy
[作者:Kudrawiec, R; Gladysiewicz, M; Janicki, L; Misiewicz, J; Cywinski, G; Cheze, C; Wolny, P; Prystawko, P; Skierbiszewski, C,期刊:Applied Physics Letters, 页码:181603-181603 , 文章类型: Article,,卷期:2012年100-18]
- Contactless electroreflectance (CER) has been applied to study the Fermi-level position on c-plane GaN surface in Van Hoof structures grown by molecular beam epitaxy (MBE) and metalorganic vapor phase epitaxy (MOVPE). A ...
- Room temperature single GaN nanowire spin valves with FeCo/MgO tunnel contacts
[作者:Kum, H; Heo, J; Jahangir, S; Banerjee, A; Guo, W; Bhattacharya, P,期刊:Applied Physics Letters, 页码:182407-182407 , 文章类型: Article,,卷期:2012年100-18]
- We report the direct measurement of spin transport characteristics in a GaN spin valve, with a relatively defect-free single GaN nanowire (NW) as the channel and FeCo/MgO as the tunnel barrier spin contact. Hanle spin pr...
- Single mode phonon scattering at carbon nanotube-graphene junction in pillared graphene structure
[作者:Lee, J; Varshney, V; Brown, JS; Roy, AK; Farmer, BL,期刊:Applied Physics Letters, 页码:183111-183111 , 文章类型: Article,,卷期:2012年100-18]
- Phonon scattering at the carbon nanotube-graphene interface is studied in the pillared graphene structure, using the phonon wave packet method. Qualitatively different scattering characteristics, compared to previous stu...
- Exceptional high Seebeck coefficient and gas-flow-induced voltage in multilayer graphene
[作者:Li, XM; Yin, J; Zhou, JX; Wang, Q; Guo, WL,期刊:Applied Physics Letters, 页码:183108-183108 , 文章类型: Article,,卷期:2012年100-18]
- Seebeck coefficient of graphene is an important parameter for defining its thermoelectric performance and thus practical applications, such as gas-flow-induced voltage. Here, we find a unique layer-dependence of the grap...
- Large area Co nanoring arrays fabricated on silicon substrate by anodic aluminum oxide template-assisted electrodeposition
[作者:Li, YL; Tang, SL; Xia, WB; Chen, LY; Wang, Y; Tang, T; Du, YW,期刊:Applied Physics Letters, 页码:183101-183101 , 文章类型: Article,,卷期:2012年100-18]
- A simple approach based on anodic aluminum oxide template-assisted electrodeposition was developed to fabricate large-area Co nanoring arrays on silicon substrate. The ring outer diameter and interspace can be modulated ...
- Measurement and simulation of anisotropic magnetoresistance in single GaAs/MnAs core/shell nanowires
[作者:Liang, J; Wang, J; Paul, A; Cooley, BJ; Rench, DW; Dellas, NS; Mohney, SE; Engel-Herbert, R; Samarth, N,期刊:Applied Physics Letters, 页码:182402-182402 , 文章类型: Article,,卷期:2012年100-18]
- We report four probe measurements of the low field magnetoresistance (MR) in single core/shell GaAs/MnAs nanowires (NWs) synthesized by molecular beam epitaxy, demonstrating clear signatures of anisotropic magnetoresista...
- Highly efficient crystalline silicon/Zonyl fluorosurfactant-treated organic heterojunction solar cells
[作者:Liu, QM; Ono, M; Tang, ZG; Ishikawa, R; Ueno, K; Shirai, H,期刊:Applied Physics Letters, 页码:183901-183901 , 文章类型: Article,,卷期:2012年100-18]
- We demonstrate a highly efficient hybrid crystalline silicon (c-Si) based photovoltaic devices with hole-transporting transparent conductive poly-(3,4-ethlenedioxythiophene):poly(styrenesufonic acid) (PEDOT:PSS) films, i...
- Band bending and surface defects in beta-Ga2O3
[作者:Lovejoy, TC; Chen, RY; Zheng, X; Villora, EG; Shimamura, K; Yoshikawa, H; Yamashita, Y; Ueda, S; Kobayashi, K; Dunham, ST; Ohuchi, FS; Olmstead, MA,期刊:Applied Physics Letters, 页码:181602-181602 , 文章类型: Article,,卷期:2012年100-18]
- Surface band bending and surface defects on the UV-transparent conducting oxide beta-Ga2O3 (100) are studied with hard x-ray photoemission spectroscopy and scanning tunneling microscopy. Highly doped beta-Ga2O3 shows fla...
- Temperature dependence of frequency response characteristics in organic field-effect transistors
[作者:Lu, XB; Minari, T; Liu, C; Kumatani, A; Liu, JM; Tsukagoshi, K,期刊:Applied Physics Letters, 页码:183308-183308 , 文章类型: Article,,卷期:2012年100-18]
- The frequency response characteristics of semiconductor devices play an essential role in the high-speed operation of electronic devices. We investigated the temperature dependence of dynamic characteristics in pentacene...
|