- Drive current and hot carrier reliability improvements of high-aspect-ratio n-channel fin-shaped field effect transistor with high-tensile contact etching stop layer - art. no. 173505
[作者:Liao, WS; Wang, MC; Hu, YM; Chen, SH; Chen, KM; Liaw, YG; Ye, C; Wang, WF; Zhou, D; Wang, H; Gu, HS,期刊:Applied Physics Letters, 页码:73505-73505 , 文章类型: Article,,卷期:2011年99-17]
- A high-aspect-ratio 3D multi-gate n-channel fin-shaped field effect transistor (FinFET) has been integrated with a stressor of a highly tensile nitride film as the initial inter layer dielectric capping layer upon a (110...
- Fluorescence enhancement of light-harvesting complex 2 from purple bacteria coupled to spherical gold nanoparticles - art. no. 173701
[作者:Bujak, L; Czechowski, N; Piatkowski, D; Litvin, R; Mackowski, S; Brotosudarmo, THP; Cogdell, RJ; Pichler, S; Heiss, W,期刊:Applied Physics Letters, 页码:73701-73701 , 文章类型: Article,,卷期:2011年99-17]
- The influence of plasmon excitations in spherical gold nanoparticles on the optical properties of a light-harvesting complex 2 (LH2) from the purple bacteria Rhodopseudomonas palustris has been studied. Systematic analys...
- Photoluminescence from heavily doped GeSn:P materials grown on Si(100) - art. no. 171910
[作者:Grzybowski, G; Jiang, L; Mathews, J; Roucka, R; Xu, C; Beeler, RT; Kouvetakis, J; Menendez, J,期刊:Applied Physics Letters, 页码:71910-71910 , 文章类型: Article,,卷期:2011年99-17]
- Photoluminescence has been observed at room temperature in phosphorus-dopedGe(1-y)Sn(y)/Si(100) alloys containing carrier densities in the 1-6 x 10(19) cm(-3) range. The emission intensity is one order of magnitude stron...
- Nanoindentation and Raman studies of phase-separated Ag-As-S glasses - art. no. 171911
[作者:Andrikopoulos, KS; Arvanitidis, J; Dracopoulos, V; Christofilos, D; Wagner, T; Yannopoulos, SN,期刊:Applied Physics Letters, 页码:71911-71911 , 文章类型: Article,,卷期:2011年99-17]
- Nanoindentation is used to study the mechanical properties at the nanoscale of the ternary Ag-x(As0.33S0.67)(100-x) glassy system for 0 <= x <= 25. Direct evidence for phase separation of a Ag-poor and a Ag-rich phase in...
- Transitivity of band offsets between semiconductor heterojunctions and oxide insulators - art. no. 172101
[作者:Afanas'ev, VV; Chou, HY; Houssa, M; Stesmans, A; Lamagna, L; Lamperti, A; Molle, A; Vincent, B; Brammertz, G,期刊:Applied Physics Letters, 页码:72101-72101 , 文章类型: Article,,卷期:2011年99-17]
- By analyzing energy barriers for electrons at interfaces of Ge, GaAs, and In0.15Ga0.85As with insulating high-permittivity oxides (HfO2, ZrO2) using the spectroscopy of internal photoemission, we found that the insertion...
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