- Growth of AlGaN containing nanometer scale compositional inhomogeneities for ultraviolet light emitters - art. no. 03C134
[作者:Sampath, AV; Garrett, GA; Enck, RW; Rottella, P; Shen, H; Wraback, M,期刊:Journal Of Vacuum Science & Technology B, 页码:C3134-C3134 , 文章类型: Article,,卷期:2011年29-3]
- The incorporation of nanometer scale compositional inhomogeneities in AlGaN has a great promise for improving the performance of UV light emitting diodes based on these materials by suppressing nonradiative recombination...
- High quality m-plane GaN grown under nitrogen-rich conditions by plasma assisted molecular beam epitaxy - art. no. 03C135
[作者:Sawicka, M; Feduniewicz-Zmuda, A; Turski, H; Siekacz, M; Grzanka, S; Krysko, M; Dziecielewski, I; Grzegory, I; Skierbiszewski, C,期刊:Journal Of Vacuum Science & Technology B, 页码:C3135-C3135 , 文章类型: Article,,卷期:2011年29-3]
- Homoepitaxial growth of m-plane GaN (1 (1) over bar 00) as a function of substrate miscut and temperature was studied by plasma assisted molecular beam epitaxy (PAMBE). The authors demonstrate that it is possible to obta...
- Growth mechanism of InGaN by plasma assisted molecular beam epitaxy - art. no. 03C136
[作者:Turski, H; Siekacz, M; Sawicka, M; Cywinski, G; Krysko, M; Grzanka, S; Smalc-Koziorowska, J; Grzegory, I; Porowski, S; Wasilewski, ZR; Skierbiszewski, C,期刊:Journal Of Vacuum Science & Technology B, 页码:C3136-C3136 , 文章类型: Article,,卷期:2011年29-3]
- In this article, the authors discuss the mechanism of InGaN growth by plasma assisted molecular beam epitaxy. They present the evidence of the influence of substrate miscut on indium incorporation for the growths with di...
- Cross-sectional scanning tunneling microscopy and spectroscopy of semimetallic ErAs nanostructures embedded in GaAs - art. no. 03C104
[作者:Kawasaki, JK; Timm, R; Buehl, TE; Lundgren, E; Mikkelsen, A; Gossard, AC; Palmstrom, CJ,期刊:Journal Of Vacuum Science & Technology B, 页码:C3104-C3104 , 文章类型: Article,,卷期:2011年29-3]
- The growth and atomic/electronic structure of molecular beam epitaxy-grown ErAs nanoparticles and nanorods embedded within a GaAs matrix are examined for the first time via cross-sectional scanning tunneling microscopy a...
- Localized dry-etch substrate thinning for dislocation reduction in heteroepitaxial CdTe/Si(211) - art. no. 03C105
[作者:Jacobs, RN; Markunas, JK; Nozaki, C; Jaime-Vasquez, M; Smith, PJ; Benson, JD; Pellegrino, J,期刊:Journal Of Vacuum Science & Technology B, 页码:C3105-C3105 , 文章类型: Article,,卷期:2011年29-3]
- Threading dislocations are a significant problem for heteroepitaxial growth of thin films on large lattice-mismatched substrates. In the case of HgCdTe thin films on Si, Ge, or GaAs, the molecular beam epitaxy (MBE) of 1...
- Molecular beam epitaxy growth of InGaN-GaN superlattices for optoelectronic devices - art. no. 03C106
[作者:Boney, C; Starikov, D; Hernandez, I; Pillai, R; Bensaoula, A,期刊:Journal Of Vacuum Science & Technology B, 页码:C3106-C3106 , 文章类型: Article,,卷期:2011年29-3]
- In the absence of native substrates for InGaN films, the achievement of thick InGaN films of high structural quality remains a challenge. The investigation of InGaN-GaN superlattice (SL) structures is one potential way t...
- AlGaN/GaN high electron mobility transistors on 100 mm silicon substrates by plasma molecular beam epitaxy - art. no. 03C107
[作者:Hoke, WE; Kennedy, TD; Mosca, JJ; Kerr, AJ; Torabi, A; Davis-Hearns, S; LaRoche, JR,期刊:Journal Of Vacuum Science & Technology B, 页码:C3107-C3107 , 文章类型: Article,,卷期:2011年29-3]
- GaN high electron mobility transistor (HEMT) structures have been grown by plasma molecular beam epitaxy on 100 mm diameter < 111 > silicon substrates. Crack-free films with thicknesses of up to 1.7 mu m were deposited w...
- Embedded ErAs nanorods on GaAs(n11) substrates by molecular beam epitaxy - art. no. 03C108
[作者:Buehl, TE; Palmstrom, CJ; Gossard, AC,期刊:Journal Of Vacuum Science & Technology B, 页码:C3108-C3108 , 文章类型: Article,,卷期:2011年29-3]
- This article investigates the codeposited growth of ErAs and GaAs at concentrations of 6% and 10% of Er on (111)A, (211)A, (311)A, and (511)A GaAs. On (111)A, (211)A, and (311)A GaAs, ErAs nanorods were observed. Those o...
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