- 13 nm high-efficiency nickel-germanium soft x-ray zone plates - art. no. 011012
[作者:Reinspach, J; Lindblom, M; Bertilson, M; von Hofsten, O; Hertz, HM; Holmberg, A,期刊:Journal Of Vacuum Science & Technology B, 页码:11012-11012 , 文章类型: Article,,卷期:2011年29-1]
- Zone plates are used as objectives for high-resolution x-ray microscopy. Both high resolution and high diffraction efficiency are crucial parameters for the performance of the lens. In this article, the authors demonstra...
- Electrical analysis of three-stage passivated In0.53Ga0.47As capacitors with varying HfO2 thicknesses and incorporating an Al2O3 interface control layer - art. no. 01A807
[作者:Monaghan, S; O'Mahony, A; Cherkaoui, K; O'Connor, E; Povey, IM; Nolan, MG; O'Connell, D; Pemble, ME; Hurley, PK; Provenzano, G; Crupi, F; Newcomb, SB,期刊:Journal Of Vacuum Science & Technology B, 页码:A1807-A1807 , 文章类型: Article,,卷期:2011年29-1]
- The atomic layer deposition of high dielectric constant oxides like HfO2 on III-V substrates such as In0.53Ga0.47As leads to a poor interface, with the growth of In0.53Ga0.47As native oxides regardless of the surface pre...
- Electrical properties of InAlN/GaN high electron mobility transistor with Al2O3, ZrO2, and GdScO3 gate dielectrics - art. no. 01A808
[作者:Cico, K; Husekov, K; Tapajna, M; Gregusova, D; Stoklas, R; Kuzmik, J; Carlin, JF; Grandjean, N; Pogany, D; Frohlich, K,期刊:Journal Of Vacuum Science & Technology B, 页码:A1808-A1808 , 文章类型: Article,,卷期:2011年29-1]
- The authors report on preparation and electrical characterization of InAlN/AlN/GaN metal-oxide-semiconductor (MOS) high electron mobility transistors (HEMTs) with Al2O3, ZrO2, and GdScO3 gate dielectrics. About 10 nm thi...
- Charge retention phenomena in CT silicon nitride: Impact of technology and operating conditions - art. no. 01AE01
[作者:Ghidini, G; Galbiati, N; Mascellino, E; Scozzari, C; Sebastiani, A; Amoroso, S; Compagnoni, CM; Spinelli, AS; Maconi, A; Piagge, R; Del Vitto, A; Alessandri, M; Baldi, I; Moltrasio, E; Albini, G; Grossi, A; Tessariol, P; Camerlenghi, E; Mauri, A,期刊:Journal Of Vacuum Science & Technology B, 页码:AE101-AE101 , 文章类型: Article,,卷期:2011年29-1]
- The aim of this work is to understand charge loss mechanisms in TANOS stack for which charge retention is monitored just after programming in an almost continuous way and voltage is applied during retention experiments i...
- Study of parasitic trapping in alumina used as blocking oxide for nonvolatile memories - art. no. 01AE02
[作者:Colonna, JP; Bocquet, M; Molas, G; Rochat, N; Blaise, P; Grampeix, H; Licitra, C; Lafond, D; Masoero, L; Vidal, V; Barnes, JP; Veillerot, M; Yckache, K,期刊:Journal Of Vacuum Science & Technology B, 页码:AE102-AE102 , 文章类型: Article,,卷期:2011年29-1]
- Alumina layers deposited by atomic layer deposition followed by rapid thermal anneal were characterized. We found that the crystallization of alumina in gamma-phase occurs between 700 and 850 degrees C. Optical band gap,...
- High verticality InP/InGaAsP etching in Cl-2/H-2/Ar inductively coupled plasma for photonic integrated circuits - art. no. 011016
[作者:Parker, JS; Norberg, EJ; Guzzon, RS; Nicholes, SC; Coldren, LA,期刊:Journal Of Vacuum Science & Technology B, 页码:11016-11016 , 文章类型: Article,,卷期:2011年29-1]
- High verticality and reduced sidewall deterioration of InP/InGaAsP in Cl-2/H-2/Ar inductively coupled plasma etching is demonstrated for a hydrogen dominant gas mixture. Selectivity >20:1, an etch rate of 24 nm/s, and a ...
- Synthesis and characterization of DyScO films deposited on Si and Si-rich SiN by atomic layer deposition for blocking layer replacement in TANOS stack - art. no. 01AE03
[作者:Lamperti, A; Cianci, E; Russo, U; Spiga, S; Salicio, O; Congedo, G; Fanciulli, M,期刊:Journal Of Vacuum Science & Technology B, 页码:AE103-AE103 , 文章类型: Article,,卷期:2011年29-1]
- In the view of improving standard TANOS stacks, a possible route is the replacement of Al2O3 blocking oxide with materials with higher dielectric constant kappa, as this would increase the electric field across the tunne...
- Evaluation of DyScOx as an alternative blocking dielectric in TANOS memories with Si3N4 or Si-rich SiN charge trapping layers - art. no. 01AE04
[作者:Congedo, G; Spiga, S; Russo, U; Lamperti, A; Salicio, O; Cianci, E; Fanciulli, M,期刊:Journal Of Vacuum Science & Technology B, 页码:AE104-AE104 , 文章类型: Article,,卷期:2011年29-1]
- Dysprosium scandate DyScOx with a kappa value of similar to 20 has been investigated as blocking dielectric in charge trapping memory capacitors. DyScOx films with 28 and 18 nm thicknesses are deposited by atomic layer d...
- Transparent semiconducting Nb-doped anatase TiO2 films deposited by helicon-wave-excited-plasma sputtering - art. no. 011017
[作者:Fouda, A; Hazu, K; Haemori, M; Nakayama, T; Tanaka, A; Chichibu, SF,期刊:Journal Of Vacuum Science & Technology B, 页码:11017-11017 , 文章类型: Article,,卷期:2011年29-1]
- The authors report stoichiometry control and postdeposition annealing-free fabrication of Nb-doped transparent anatase TiO2 (A-TiO2:Nb) films on alkaline-free glass substrates by helicon-wave-excited-plasma sputtering. T...
- Residue growth on metallic hard mask after dielectric etching in fluorocarbon based plasmas. II. Solutions - art. no. 011018
[作者:Posseme, N; Bouyssou, R; Chevolleau, T; David, T; Arnal, V; Darnon, M; Brun, P; Verove, C; Joubert, O,期刊:Journal Of Vacuum Science & Technology B, 页码:11018-11018 , 文章类型: Article,,卷期:2011年29-1]
- Metallic hard mask architecture becomes an integration of choice for an advanced back end of the line interconnect technology node. However, one of the main integration issues is the growth of residue (titanium based com...
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