- Space charge, emittance, trajectories, and the modeling of field emitter arrays - art. no. 02B101
[作者:Jensen, KL,期刊:Journal Of Vacuum Science & Technology B, 页码:B2101-B2101 , 文章类型: Article,,卷期:2011年29-2]
- An accurate methodology for the evaluation of space charge effects, tip and array emittance, and the distribution of electron position and velocity components (trajectories) near a conical field emission tip is made poss...
- Annealing temperature dependence of Ohmic contact resistance and morphology on InAlN/GaN high electron mobility transistor structures - art. no. 021002
[作者:Lo, CF; Liu, L; Chang, CY; Ren, F; Craciun, V; Pearton, SJ; Heo, YW; Laboutin, O; Johnson, JW,期刊:Journal Of Vacuum Science & Technology B, 页码:21002-21002 , 文章类型: Article,,卷期:2011年29-2]
- Ti/Al/Ni/Au Ohmic contact metallization on InAlN/GaN heterostructures both with and without a thin GaN cap layer was annealed at different temperatures. The minimum transfer resistance for the contacts of 0.65 Omega mm (...
- Circular apertures for contact hole patterning in 193 nm immersion lithography - art. no. 021003
[作者:Tay, CJ; Quan, C; Ling, ML; Chua, GS; Tan, SK; Lin, Q,期刊:Journal Of Vacuum Science & Technology B, 页码:21003-21003 , 文章类型: Article,,卷期:2011年29-2]
- Contact hole patterning has always been one of the most challenging issues in lithography. Conventional optical proximity correction (OPC) approach for contact hole patterning involves dimensional biasing, addition of se...
- Emission enhancement from nonpolar a-plane III-nitride nanopillar - art. no. 021004
[作者:Kim, BJ; Jung, Y; Mastro, MA; Hite, J; Nepal, N; Eddy, CR; Kim, J,期刊:Journal Of Vacuum Science & Technology B, 页码:21004-21004 , 文章类型: Article,,卷期:2011年29-2]
- A nonpolar a-plane GaN-based light emitting structure was patterned by self-assembled SiO2 nanosphere lithography and subsequent inductively coupled plasma (ICP) etch to define an array of nanopillar light emitters. The ...
- Reduction of structural defects in a-plane GaN epitaxy by use of periodic hemispherical patterns in r-plane sapphire substrates - art. no. 021005
[作者:Wu, ZH; Sun, YQ; Yin, J; Fang, YY; Dai, JN; Chen, CQ; Wei, QY; Li, T; Sun, W; Fischer, AM; Ponce, FA,期刊:Journal Of Vacuum Science & Technology B, 页码:21005-21005 , 文章类型: Article,,卷期:2011年29-2]
- Using hemisphere-shaped patterned r-plane sapphire substrates, high quality nonpolar (11 (2) over bar0) a-plane gallium nitride (GaN) films have been obtained with superior structural characteristics to films grown on co...
- Development of a compact neutron source based on field ionization processes - art. no. 02B107
[作者:Persaud, A; Allen, I; Dickinson, MR; Schenkel, T; Kapadia, R; Takei, K; Javey, A,期刊:Journal Of Vacuum Science & Technology B, 页码:B2107-B2107 , 文章类型: Article,,卷期:2011年29-2]
- The authors report on the use of carbon nanofiber nanoemitters to ionize deuterium atoms for the generation of neutrons in a deuterium-deuterium reaction in a preloaded target. Acceleration voltages in the range of 50-80...
- Inductively coupled plasma etching of high aspect ratio two-dimensional photonic crystals in Al-rich AlGaAs and AlGaAsSb - art. no. 021006
[作者:Larrue, A; Belharet, D; Dubreuil, P; Bonnefont, S; Gauthier-Lafaye, O; Monmayrant, A; Lozes-Dupuy, F; Moumdji, S,期刊:Journal Of Vacuum Science & Technology B, 页码:21006-21006 , 文章类型: Article,,卷期:2011年29-2]
- Planar two-dimensional photonic crystals are key tools for the development of advanced optoelectronic devices. However, their practical realization often requires deep etching of air holes with high aspect ratio. In this...
|