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文章名     作者     期刊名     摘要     卷     期         如果没有找到您所需要的文献，请点击 ——此处申请     共99条记录   Atomic structure, electronic structure, and band offsets at Ge:GeO:GeO2 interfaces [作者：Lin, L; Xiong, K; Robertson, J,期刊：Applied Physics Letters, 页码：242902-242902 , 文章类型： Article，,卷期：2010年97-24] The band gaps of GeO2 and GeO are calculated to be 6.1 and 4.0 eV, respectively, using hybrid density functionals that do not require band gap corrections. The conduction band offsets for Ge:GeO2 and Ge:GeO interfaces ar... Low symmetry monoclinic M-C phase in epitaxial BiFeO3 thin films on LaSrAlO4 substrates [作者：Chen, ZH; Luo, ZL; Qi, YJ; Yang, P; Wu, SX; Huang, CW; Wu, T; Wang, JL; Gao, C; Sritharan, T; Chen, L,期刊：Applied Physics Letters, 页码：242903-242903 , 文章类型： Article，,卷期：2010年97-24] We reported that the tetragonal-like phase identified in strained epitaxial BiFeO3 films on a (001) LaSrAlO4 single crystal substrates is monoclinic MC, based on high resolution synchrotron x-ray studies and piezorespons... Amplitude scaling of a static wrinkle at an oil-air interface created by dielectrophoresis forces [作者：Brown, CV; Al-Shabib, W; Wells, GG; McHale, G; Newton, MI,期刊：Applied Physics Letters, 页码：242904-242904 , 文章类型： Article，,卷期：2010年97-24] Dielectrophoresis forces have been used to create a static periodic wrinkle with a sinusoidal morphology on the surface of a thin layer of 1-decanol oil. The surface deformation occurs when a voltage V is applied between... Superconducting microfabricated ion traps [作者：Wang, SX; Ge, YF; Labaziewicz, J; Dauler, E; Berggren, K; Chuang, IL,期刊：Applied Physics Letters, 页码：244102-244102 , 文章类型： Article，,卷期：2010年97-24] We fabricate superconducting ion traps with niobium and niobium nitride and trap single Sr-88 ions at cryogenic temperatures. The superconducting transition is verified and characterized by measuring the resistance and c... Fano profiles in transmission spectra of terahertz radiation through one-dimensional periodic metallic structures [作者：Pradarutti, B; Torosyan, G; Theuer, M; Beigang, R,期刊：Applied Physics Letters, 页码：244103-244103 , 文章类型： Article，,卷期：2010年97-24] The transmission properties of broadband terahertz radiation through one-dimensional periodic metallic structures are investigated experimentally, and the obtained results are explained theoretically. Characteristic mini... Effect of metal diffusion on mechanoelectric property of ionic polymer-metal composite [作者：Tiwari, R; Kim, KJ,期刊：Applied Physics Letters, 页码：244104-244104 , 文章类型： Article，,卷期：2010年97-24] Ionic polymer-metal composite (IPMC) manufactured through electroless deposition has distinct electrode intermediate and polymer layers. Models typically study the ion motion inside the polymer layer, neglecting the elec... Ultrafast electrical charging and discharging of a single InGaAs quantum dot (vol 97, 173108, 2010) [作者：Nannen, J; Kummell, T; Bartsch, M; Brunner, K; Bacher, G,期刊：Applied Physics Letters, 页码：249901-249901 , 文章类型： Correction，,卷期：2010年97-24] Space-charge-limited leakage current in high dielectric constant and ferroelectric thin films considering the field-dependent permittivity [作者：Sun, J; Zheng, XJ; Yin, W; Tang, MH; Li, W,期刊：Applied Physics Letters, 页码：242905-242905 , 文章类型： Article，,卷期：2010年97-24] Distinguishing from the traditional characterization on high-field leakage current density-voltage relationship, the field-dependent permittivity from the polarization derivative is used to solve the space-charge-limited... Domain pattern and piezoelectric response across polymorphic phase transition in strained bismuth ferrite films [作者：Kuo, HY; Shu, YC; Chen, HZ; Hsueh, CJ; Wang, CH; Chu, YH,期刊：Applied Physics Letters, 页码：242906-242906 , 文章类型： Article，,卷期：2010年97-24] A model is developed to investigate the domain pattern and piezoelectric response across the polymorphic phase transition in strained epitaxial bismuth ferrite films. The orientations of stripelike pattern of the mixed r... Defect-related room-temperature ferroelectricity in tensile-strained SrTiO3 thin films on GdScO3 (110) substrates [作者：Kim, YS; Choi, JS; Kim, J; Moon, SJ; Park, BH; Yu, J; Kwon, JH; Kim, M; Chung, JS; Noh, TW; Yoon, JG,期刊：Applied Physics Letters, 页码：242907-242907 , 文章类型： Article，,卷期：2010年97-24] We investigate room-temperature (RT) ferroelectricity in tensile-strained SrTiO3 (STO) thin films grown on GdScO3 (110) substrates. To separate the strain and the defect dipole effect, we apply an electric field to measu... Orientation of colloidally suspended LiNbO3 nanocrystals in externally applied electric fields [作者：Schutze, D; Knabe, B; Ackermann, M; Buse, K,期刊：Applied Physics Letters, 页码：242908-242908 , 文章类型： Article，,卷期：2010年97-24] Electric fields are applied to lithium niobate nanoparticles of 41 nm radius colloidally suspended in heptane. Interferometric measurements of field-induced refractive index changes show that the particle orientation is ... Grain size effect on the nonlinear dielectric properties of barium titanate ceramics [作者：Curecheriu, L; Buscaglia, MT; Buscaglia, V; Zhao, Z; Mitoseriu, L,期刊：Applied Physics Letters, 页码：242909-242909 , 文章类型： Article，,卷期：2010年97-24] The nonlinear dielectric properties of dense BaTiO3 ceramics with grain size of 1 mu m-90 nm were investigated. In the finest ceramics, the permittivity reduces below 1000 and a remarkable nonhysteretic linear dc-tunabil... Fundamental oscillation of resonant tunneling diodes above 1 THz at room temperature [作者：Suzuki, S; Asada, M; Teranishi, A; Sugiyama, H; Yokoyama, H,期刊：Applied Physics Letters, 页码：242102-242102 , 文章类型： Article，,卷期：2010年97-24] Fundamental oscillations up to 1.04 THz were achieved in resonant tunneling diodes at room temperature. A graded emitter and thin barriers were introduced in GaInAs/AlAs double-barrier resonant tunneling diodes for reduc... Temperature dependence of current-voltage characteristics of Ni-AlGaN/GaN Schottky diodes [作者：Lim, W; Jeong, JH; Lee, JH; Hur, SB; Ryu, JK; Kim, KS; Kim, TH; Song, SY; Yang, JI; Pearton, SJ,期刊：Applied Physics Letters, 页码：242103-242103 , 文章类型： Article，,卷期：2010年97-24] Ni-AlGaN/GaN Schottky barrier diodes (SBDs) with lateral geometry were fabricated on sapphire substrates. At 300 K, devices with 500-mu m-diameter Schottky contacts exhibited breakdown voltage (V-B) of 765 V, forward cur... Direct imaging of boron segregation to extended defects in silicon [作者：Duguay, S; Philippe, T; Cristiano, F; Blavette, D,期刊：Applied Physics Letters, 页码：242104-242104 , 文章类型： Article，,卷期：2010年97-24] Silicon was implanted with a high boron dose (5 x 10(15) at. cm(-2)) at 30 keV and further annealed at 950 degrees C for 30 s. The sample was analyzed using transmission electron microscopy (TEM) and atom probe tomograph... Band structures of graphene hexagonal lattice semiconductor quantum dots [作者：Peng, JA; Li, SS,期刊：Applied Physics Letters, 页码：242105-242105 , 文章类型： Article，,卷期：2010年97-24] Electronic structures of coupled semiconductor quantum dots (QDs) arranged as graphene hexagonal lattice are studied theoretically using the tight-binding method. In our calculations, the electrons can hop to the third-n...