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文章名     作者     期刊名     摘要     卷     期         如果没有找到您所需要的文献，请点击 ——此处申请     共99条记录   Ambipolar bistable switching effect of graphene [作者：Shin, YJ; Kwon, JH; Kalon, G; Lam, KT; Bhatia, CS; Liang, G; Yang, H,期刊：Applied Physics Letters, 页码：262105-262105 , 文章类型： Article，,卷期：2010年97-26] Reproducible current hysteresis is observed in graphene with a back gate structure in a two-terminal configuration. An opposite sequence of switching with different charge carriers, holes, and electrons is found. The cha... Increased critical thickness for high Ge-content strained SiGe-on-Si using selective epitaxial growth [作者：Kim, M; Hashemi, P; Hoyt, JL,期刊：Applied Physics Letters, 页码：262106-262106 , 文章类型： Article，,卷期：2010年97-26] The onset of misfit dislocation formation, i.e., the critical thickness for heteroepitaxy, is studied for selective epitaxial growth of high Ge-content, strained SiGe on oxide-patterned Si wafers. Misfit dislocation spac... Enhanced Ohmic contact via graphitization of polycrystalline silicon carbide [作者：Liu, F; Hsia, B; Carraro, C; Pisano, AP; Maboudian, R,期刊：Applied Physics Letters, 页码：262107-262107 , 文章类型： Article，,卷期：2010年97-26] Electrical contact to silicon carbide with low contact resistivity and high stability is a critical requirement for SiC-based microsystem and nanosystem technology for harsh environment applications. In this letter, nano... Room temperature coherent and voltage tunable terahertz emission from nanometer-sized field effect transistors [作者：Boubanga-Tombet, S; Teppe, F; Torres, J; El Moutaouakil, A; Coquillat, D; Dyakonova, N; Consejo, C; Arcade, P; Nouvel, P; Marinchio, H; Laurent, T; Palermo, C; Penarier, A; Otsuji, T; Varani, L; Knap, W,期刊：Applied Physics Letters, 页码：262108-262108 , 文章类型： Article，,卷期：2010年97-26] We report on reflective electro-optic sampling measurements of terahertz emission from nanometer-gate-length InGaAs-based high electron mobility transistors. The room temperature coherent gate-voltage tunable emission is... Electron spin dynamics in heavily Mn-doped (Ga,Mn)As [作者：Zhu, YG; Han, LF; Chen, L; Zhang, XH; Zhao, JH,期刊：Applied Physics Letters, 页码：262109-262109 , 文章类型： Article，,卷期：2010年97-26] Electron spin relaxation and related mechanisms in heavily Mn-doped (Ga,Mn) As are studied by performing time-resolved magneto-optical Kerr effect measurements. At low temperature, s-d exchange scattering dominates elect... Single electron pumping through a quantum dot- embedded carbon nanotube using surface acoustic wave [作者：Kim, BK; Kim, JJ; Seo, M; Chung, Y; Woo, BC; Kim, J; Song, W; Kim, N,期刊：Applied Physics Letters, 页码：262110-262110 , 文章类型： Article，,卷期：2010年97-26] We have studied acoustoelectric current through a quantum dot-embedded carbon nanotube induced by a surface acoustic wave. The measurements were carried out on a same device but in two very different quantum dot charging... Surface roughness scattering in two dimensional electron gas channel [作者：Liu, B; Lu, YW; Jin, GR; Zhao, Y; Wang, XL; Zhu, QS; Wang, ZG,期刊：Applied Physics Letters, 页码：262111-262111 , 文章类型： Article，,卷期：2010年97-26] The mobility of AlxGa1-xN/GaN heterostructure two dimensional electron gas channel limited by surface roughness scattering was calculated considering the strong spontaneous and piezoelectric polarizations in III-group ni... Anticrosstalk characteristics correlated with the set process for alpha-Fe2O3/Nb-SrTiO3 stack-based resistive switching device [作者：Chen, YS; Chen, B; Gao, B; Zhang, FF; Qiu, YJ; Lian, GJ; Liu, LF; Liu, XY; Han, RQ; Kang, JF,期刊：Applied Physics Letters, 页码：262112-262112 , 文章类型： Article，,卷期：2010年97-26] A resistive switching device based on the stacked alpha-Fe2O3/Nb-SrTiO3 is proposed and fabricated that demonstrates excellent bipolar resistive switching behaviors including the uniformity, endurance, and retention perf... A graphene quantum dot with a single electron transistor as an integrated charge sensor [作者：Wang, LJ; Cao, G; Tu, T; Li, HO; Zhou, C; Hao, XJ; Su, Z; Guo, GC; Jiang, HW; Guo, GP,期刊：Applied Physics Letters, 页码：262113-262113 , 文章类型： Article，,卷期：2010年97-26] A quantum dot (QD) with an integrated charge sensor is becoming a common architecture for a spin or charge based solid state qubit. To implement such a structure in graphene, we have fabricated a twin-dot structure in wh... Molecular conductivity switching of two benzene rings under electric field [作者：Vergniory, MG; Granadino-Roldan, JM; Garcia-Lekue, A; Wang, LW,期刊：Applied Physics Letters, 页码：262114-262114 , 文章类型： Article，,卷期：2010年97-26] A molecular transistor based on torsion-angle conformation change driven by gate electric field is designed and studied using ab initio calculations. This transistor consists of a SH-C6H2F(CH3)C6H2(CH3)F-SH molecule sand... Electron-phonon coupling in single-walled carbon nanotubes determined by shot noise [作者：Wu, F; Virtanen, P; Andresen, S; Placais, B; Hakonen, PJ,期刊：Applied Physics Letters, 页码：262115-262115 , 文章类型： Article，,卷期：2010年97-26] We have measured shot noise in metallic single-walled carbon nanotubes of length L = 1 mu m and have found strong suppression of noise with increasing voltage. We conclude that the coupling of electron and phonon baths a... Isolation blocking voltage of nitrogen ion-implanted AlGaN/GaN high electron mobility transistor structure [作者：Lo, CF; Kang, TS; Liu, L; Chang, CY; Pearton, SJ; Kravchenko, II; Laboutin, O; Johnson, JW; Ren, F,期刊：Applied Physics Letters, 页码：262116-262116 , 文章类型： Article，,卷期：2010年97-26] Nitrogen ion-implanted AlGaN/GaN high electron mobility transistor structures showed an isolation blocking voltage of 900 V with a leakage current at 1 mu A/mm across an implanted isolation-gap of 10 mu m between two Ohm... Electronic conduction in amorphous and polycrystalline zinc-indium oxide films [作者：Kuznetsov, VL; O'Neil, DH; Pepper, M; Edwards, PP,期刊：Applied Physics Letters, 页码：262117-262117 , 文章类型： Article，,卷期：2010年97-26] We report on the electronic properties of both amorphous and polycrystalline zinc-indium oxide thin films with similar degenerate electron concentrations just above the insulator-to-metal transition. The highest electron... Peculiarities of impact ionization of Impurity Al in SiC polytypes [作者：Sankin, VI; Monakhov, AM; Shkrebiy, PP; Abramov, PL; Sablina, NI; Averkiev, NS,期刊：Applied Physics Letters, 页码：262118-262118 , 文章类型： Article，,卷期：2010年97-26] The specific character of impact ionization of a small radius impurities was investigated in polytypes 6H-, 4H-, and 15R-SiC. The I-V characteristics of Al breakdown in 6H-, 4H-, and 15R- SiC in electrical field were stu... Ambipolar diffusion of photoexcited carriers in bulk GaAs [作者：Ruzicka, BA; Werake, LK; Samassekou, H; Zhao, H,期刊：Applied Physics Letters, 页码：262119-262119 , 文章类型： Article，,卷期：2010年97-26] The ambipolar diffusion of carriers in bulk GaAs is studied by using an ultrafast pump-probe technique with a high spatial resolution. Carriers with a pointlike spatial profile are excited by a tightly focused pump laser... Magnetoresistance in a lithography defined single constrained domain wall spin-valve [作者：Wang, YD; de Groot, CH; Claudio-Gonzalez, D; Fangohr, H,期刊：Applied Physics Letters, 页码：262501-262501 , 文章类型： Article，,卷期：2010年97-26] We have measured domain wall magnetoresistance in a single lithographically constrained domain wall. An H-shaped Ni nanobridge was fabricated by e-beam lithography with the two sides being single magnetic domains showing...