个性化文献订阅>文章检索

文章名     作者     期刊名     摘要     卷     期         如果没有找到您所需要的文献，请点击 ——此处申请     共76条记录   Investigation of high frequency performance limit of graphene field effect transistors [作者：Pince, E; Kocabas, C,期刊：Applied Physics Letters, 页码：173106-173106 , 文章类型： Article，,卷期：2010年97-17] Extremely high field effect mobility together with the high surface coverage makes graphene a promising material for high frequency electronics application. We investigate the intrinsic high frequency performance limit o... Structural and optical properties of InAs quantum dot chains grown on nanoimprint lithography structured GaAs with different pattern orientations [作者：Hakkarainen, TV; Tommila, J; Schramm, A; Tukiainen, A; Ahorinta, R; Dumitrescu, M; Guina, M,期刊：Applied Physics Letters, 页码：173107-173107 , 文章类型： Article，,卷期：2010年97-17] We use large-scale UV nanoimprint lithography prepatterned GaAs substrates for site-controlled growth of InAs quantum dot chains by molecular beam epitaxy. We demonstrate simultaneous fabrication of quantum dot chains wi... Ultrafast electrical charging and discharging of a single InGaAs quantum dot [作者：Nannen, J; Kummell, T; Bartsch, M; Brunner, K; Bacher, G,期刊：Applied Physics Letters, 页码：173108-173108 , 文章类型： Article，,卷期：2010年97-17] We report on ultrafast control of the charge state of a single InGaAs quantum dot in a charge-tunable p-i-n diode structure. Focused ion beam etching is employed to decrease the capacitance of the device to enable radio ... Effect of electron-beam irradiation on graphene field effect devices [作者：Childres, I; Jauregui, LA; Foxe, M; Tian, JF; Jalilian, R; Jovanovic, I; Chen, YP,期刊：Applied Physics Letters, 页码：173109-173109 , 文章类型： Article，,卷期：2010年97-17] Electron beam exposure is a commonly used tool for fabricating and imaging graphene-based devices. Here, we present a study of the effects of electron-beam irradiation on the electronic transport properties of graphene a... Water-cycle mechanism for writing and erasing nanostructures at the LaAlO3/SrTiO3 interface [作者：Bi, F; Bogorin, DF; Cen, C; Bark, CW; Park, JW; Eom, CB; Levy, J,期刊：Applied Physics Letters, 页码：173110-173110 , 文章类型： Article，,卷期：2010年97-17] Nanoscale control of the metal-insulator transition in LaAlO3/SrTiO3 heterostructures can be achieved using local voltages applied by a conductive atomic force microscope (c-AFM) probe. One proposed mechanism for such pr... Gold contact to individual metallic carbon nanotubes: A sensitive nanosensor for high-pressure [作者：Caillier, C; Ayari, A; Gouttenoire, V; San Miguel, A; Jourdain, V; Picher, M; Sauvajol, JL,期刊：Applied Physics Letters, 页码：173111-173111 , 文章类型： Article，,卷期：2010年97-17] A strong and universal piezoresistive effect is evidenced for individual metallic carbon nanotubes contacted to gold electrodes through high contact resistances. The effect is well explained through a pressure modulation... A miniaturized power source using electron stimulated impact ionization field emission [作者：Ghosh, N; Kang, WP; Davidson, JL,期刊：Applied Physics Letters, 页码：173112-173112 , 文章类型： Article，,卷期：2010年97-17] This paper reports the fabrication and characterization of miniaturized monolithic lateral field emission power cell (FEPC) comprising of carbon nanotube (CNT) emitters and an integrated metallic anode. Electron stimulat... Formation of void lattice after annealing of Ge quantum dot lattice in alumina matrix [作者：Pinto, SRC; Rolo, AG; Gomes, MJM; Ivanda, M; Bogdanovic-Radovic, I; Grenzer, J; Mucklich, A; Barber, DJ; Bernstorff, S; Buljan, M,期刊：Applied Physics Letters, 页码：173113-173113 , 文章类型： Article，,卷期：2010年97-17] We report on the formation of a regularly ordered void lattice with a void size of about 4 nm in an alumina matrix. The voids were formed by thermal treatment of a well-ordered three-dimensional Ge quantum dot lattice fo... Green light emission from the edges of organic single-crystal transistors [作者：Yomogida, Y; Takenobu, T; Shimotani, H; Sawabe, K; Bisri, SZ; Yamao, T; Hotta, S; Iwasa, Y,期刊：Applied Physics Letters, 页码：173301-173301 , 文章类型： Article，,卷期：2010年97-17] We have fabricated ambipolar light-emitting field-effect transistors made of 1,4-bis(5-phenylthiophen-2-yl)benzene (AC5) single crystals, which have 35% fluorescent quantum efficiency. The obtained hole and electron mobi... Electrical characteristics of conjugated self-assembled monolayers in large-area molecular junctions [作者：Kronemeijer, AJ; Huisman, EH; Akkerman, HB; Goossens, AM; Katsouras, I; van Hal, PA; Geuns, TCT; van der Molen, SJ; Blom, PWM; de Leeuw, DM,期刊：Applied Physics Letters, 页码：173302-173302 , 文章类型： Article，,卷期：2010年97-17] We have studied the electrical characteristics of close-packed monolayers of conjugated para-phenylene oligomers as a function of molecular length in large-area molecular junctions. An exponential increase in resistance ... Ionic properties of liquid crystals dispersed with carbon nanotubes and montmorillonite nanoplatelets [作者：Liu, HH; Lee, W,期刊：Applied Physics Letters, 页码：173501-173501 , 文章类型： Article，,卷期：2010年97-17] The ionic properties of liquid crystals doped with one-dimensional carbon nanotubes, two-dimensional montmorillonite, and a mixture of both are investigated. The results indicate that the relaxation times of electrode po... Self-biased planar millimeter wave notch filters based on magnetostatic wave excitation in barium hexagonal ferrite thin films [作者：Song, YY; Sun, YY; Lu, L; Bevivino, J; Wu, MZ,期刊：Applied Physics Letters, 页码：173502-173502 , 文章类型： Article，,卷期：2010年97-17] The use of M-type barium hexagonal ferrite (BaM) thin films for self-biased planar millimeter wave notch filters was demonstrated for the first time. The BaM film was grown by pulsed laser deposition and showed a remanen... Hypersonic rugate filters based on porous silicon [作者：Thomas, L; Aliev, GN; Snow, PA,期刊：Applied Physics Letters, 页码：173503-173503 , 文章类型： Article，,卷期：2010年97-17] Periodic solid state structures exhibit transmission stopbands for waves of certain frequencies. We demonstrate porous silicon based rugate filters with 40 dB rejection first-order stopbands for longitudinal acoustic wav... Microwave power thin film resistors for high frequency and high power load applications [作者：Jiang, HC; Si, X; Zhang, WL; Wang, CJ; Peng, B; Li, YR,期刊：Applied Physics Letters, 页码：173504-173504 , 文章类型： Article，,卷期：2010年97-17] The authors report a power-dividing-based microwave power thin film resistor (MPTFR) that exhibits high operating frequency and high power load. The MPTFR is comprised of substrate, ground electrodes, two TaN resistive f... InAlN/GaN/Si heterostructures and field-effect transistors with lattice matched and tensely or compressively strained InAlN [作者：Mikulics, M; Stoklas, R; Dadgar, A; Gregusova, D; Novak, J; Grutzmacher, D; Krost, A; Kordos, P,期刊：Applied Physics Letters, 页码：173505-173505 , 文章类型： Article，,卷期：2010年97-17] Properties of InAlN/GaN heterostructures and field-effect transistors with nearly lattice matched (InN=18%) and tensely (13%) or compressively (21%) strained InAlN barrier layer were evaluated. The sheet charge density i... Light induced instabilities in amorphous indium-gallium-zinc-oxide thin-film transistors [作者：Chowdhury, MDH; Migliorato, P; Jang, J,期刊：Applied Physics Letters, 页码：173506-173506 , 文章类型： Article，,卷期：2010年97-17] The effect of exposure to ultraviolet radiation on the characteristics of amorphous indium-gallium-zinc-oxide thin-film transistors (TFTs) fabricated by sputtering is investigated. After illumination with 1.5 mW cm(-2) o...