- Single-step, catalyst-free plasma-assisted synthesis and growth mechanism of single-crystalline aluminum nitride nanorods
[作者:Huang, SY; Cheng, QJ; Xu, S; Ostrikov, K,期刊:Applied Physics Letters, 页码:213103-213103 , 文章类型: Article,,卷期:2010年97-21]
- Synthesis of one-dimensional AlN nanostructures commonly requires high process temperatures (> 900 degrees C), metal catalyst, and hazardous gas/powder precursors. We report on a simple, single-step, catalyst-free, plasm...
- Tuning of a graphene-electrode work function to enhance the efficiency of organic bulk heterojunction photovoltaic cells with an inverted structure
[作者:Jo, G; Na, SI; Oh, SH; Lee, S; Kim, TS; Wang, G; Choe, M; Park, W; Yoon, J; Kim, DY; Kahng, YH; Lee, T,期刊:Applied Physics Letters, 页码:213301-213301 , 文章类型: Article,,卷期:2010年97-21]
- We demonstrate the fabrication of inverted-structure organic solar cells (OSCs) with graphene cathodes. The graphene film used in this work was work-function-engineered with an interfacial dipole layer to reduce the work...
- Silicon waveguides and ring resonators at 5.5 mu m
[作者:Spott, A; Liu, Y; Baehr-Jones, T; Ilic, R; Hochberg, M,期刊:Applied Physics Letters, 页码:213501-213501 , 文章类型: Article,,卷期:2010年97-21]
- We demonstrate low loss ridge waveguides and the first ring resonators for the mid-infrared, for wavelengths ranging from 5.4 to 5.6 mu m. Structures were fabricated using electron-beam lithography on the silicon-on-sapp...
- Mixed-phase p-type silicon oxide containing silicon nanocrystals and its role in thin-film silicon solar cells
[作者:Cuony, P; Marending, M; Alexander, DTL; Boccard, M; Bugnon, G; Despeisse, M; Ballif, C,期刊:Applied Physics Letters, 页码:213502-213502 , 文章类型: Article,,卷期:2010年97-21]
- Lower absorption, lower refractive index, and tunable resistance are three advantages of amorphous silicon oxide containing nanocrystalline silicon grains (nc-SiOx) compared to microcrystalline silicon (mu c-Si), when us...
- Highly scaled charge-trapping layer of ZrON nonvolatile memory device with good retention
[作者:Tsai, CY; Lee, TH; Cheng, CH; Chin, A; Wang, H,期刊:Applied Physics Letters, 页码:213504-213504 , 文章类型: Article,,卷期:2010年97-21]
- We have fabricated the TaN-[SiO2-LaAlO3]-ZrON-[LaAlO3-SiO2]-Si charge-trapping flash device with highly scaled 3.6 nm equivalent-Si3N4-thickness. This device shows large 4.9 V initial memory window, and good retention of...
- Liquid crystal display modes in a nontilted bent-core biaxial smectic liquid crystal
[作者:Nagaraj, M; Panarin, YP; Vij, JK; Keith, C; Tschierske, C,期刊:Applied Physics Letters, 页码:213505-213505 , 文章类型: Article,,卷期:2010年97-21]
- Liquid crystal display (LCD) modes associated with the rotation of the secondary director in nontilted, biaxial smectic phase of an achiral bent-core compound are demonstrated. For LCDs, we find that at least four displa...
- Hall mobility measurements in enhancement-mode GaAs field-effect transistors with Al2O3 gate dielectric
[作者:Shahrjerdi, D; Nah, J; Hekmatshoar, B; Akyol, T; Ramon, M; Tutuc, E; Banerjee, SK,期刊:Applied Physics Letters, 页码:213506-213506 , 文章类型: Article,,卷期:2010年97-21]
- We report the direct measurement of the inversion charge density and electron mobility in enhancement-mode n-channel GaAs transistors using gated Hall bars. The Hall data reveal the existence of a reduced mobile charge d...
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