个性化文献订阅>文章检索
  文章名  
  作者  
  期刊名  
  摘要  
   
   
   
  如果没有找到您所需要的文献,请点击 ——此处申请  
  共61条记录  
  • Direct Measure of Strain and Electronic Structure in GaAs/GaP Core-Shell Nanowires
    [作者:Montazeri, M; Fickenscher, M; Smith, LM; Jackson, HE; Yarrison-Rice, J; Kang, JH; Gao, Q; Tan, HH; Jagadish, C; Guo, YN; Zou, J; Pistol, ME; Pryor, CE,期刊:Nano Letters, 页码:880-886 , 文章类型: Article,,卷期:2010年10-3]
  • Highly strained GaAs/GaP nanowires of excellent optical quality were grown with 50 nm diameter GaAs cores and 25 nm GaP shells. Photoluminescence from these nanowires is observed at energies dramatically shifted from the...
  • High-Performance Single Nanowire Tunnel Diodes
    [作者:Wallentin, J; Persson, JM; Wagner, JB; Samuelson, L; Deppert, K; Borgstrom, MT,期刊:Nano Letters, 页码:974-979 , 文章类型: Article,,卷期:2010年10-3]
  • We demonstrate single nanowire tunnel diodes with room temperature peak current densities of up to 329 A/cm(2). Despite the large surface to volume ratio of the type-II InP-GaAs axial heterostructure nanowires, we measur...
  • Magnetic Doping and Kondo Effect in Bi2Se3 Nanoribbons
    [作者:Cha, JJ; Williams, JR; Kong, DS; Meister, S; Peng, HL; Bestwick, AJ; Gallagher, P; Goldhaber-Gordon, D; Cui, Y,期刊:Nano Letters, 页码:1076-1081 , 文章类型: Article,,卷期:2010年10-3]
  • A simple surface band structure and a large bulk band gap have allowed Bi2SC3 to become a reference material for the newly discovered three-dimensional topological insulators, which exhibit topologically protected conduc...
  • Quantum Interference Channeling at Graphene Edges
    [作者:Yang, H; Mayne, AJ; Boucherit, M; Comtet, G; Dujardin, G; Kuk, Y,期刊:Nano Letters, 页码:943-947 , 文章类型: Article,,卷期:2010年10-3]
  • Electron scattering at graphene edges is expected to make a crucial contribution to the electron transport in graphene nanodevices by producing quantum interferences. Atomic-scale scanning tunneling microscopy (STM) topo...
  • Ta3N5 Nanotube Arrays for Visible Light Water Photoelectrolysis
    [作者:Feng, XJ; LaTempa, TJ; Basham, JI; Mor, GK; Varghese, OK; Grimes, CA,期刊:Nano Letters, 页码:948-952 , 文章类型: Article,,卷期:2010年10-3]
  • Tantalum nitride (Ta3N5) has a band gap of approximately 2.07 eV, suitable for collecting more than 45% of the incident solar spectrum energy. We describe a simple method for scale fabrication of highly oriented Ta3N5 na...
  • Excess Dissipation in a Single-Electron Box: The Sisyphus Resistance
    [作者:Persson, F; Wilson, CM; Sandberg, M; Johansson, G; Delsing, P,期刊:Nano Letters, 页码:953-957 , 文章类型: Article,,卷期:2010年10-3]
  • We present measurements of the ac response of a single-electron box (SEB). We apply a radio frequency signal with a Frequency larger than the tunneling rate and drive the system out of equilibrium. We observe much more d...
共61条记录 第一页 上一页 1 2 3 4 最后一页