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文章名     作者     期刊名     摘要     卷     期         如果没有找到您所需要的文献，请点击 ——此处申请     共185条记录   Generating integrated-circuit patterns via cutting and stitching of gratings [作者：Zhao, L; Xuan, Y; Qi, MH,期刊：Journal Of Vacuum Science & Technology B, 页码：2750-2754 , 文章类型： Article，,卷期：2009年27-6] Integrated-circuit patterns, such as those of transistor gates, usually consist of multivertex paths whose line segments are along two orthogonal directions. Such patterns are sometimes called "Manhattan structures" and ... Laser print patterning of planar spiral inductors and interdigitated capacitors [作者：Klejwa, N; Misra, R; Provine, J; Howe, RT; Klejwa, SJ,期刊：Journal Of Vacuum Science & Technology B, 页码：2745-2749 , 文章类型： Article，,卷期：2009年27-6] This article describes direct laser printing of thin-film polymer onto rigid substrates for use as an etch mask or liftoff layer in patterning on-chip electrical components. Using this technique, the authors fabricated p... High density submicron features using a laser pattern generator and double patterning [作者：Gaevski, ME; Watson, GP; Novembre, AE,期刊：Journal Of Vacuum Science & Technology B, 页码：2742-2744 , 文章类型： Article，,卷期：2009年27-6] Line and space patterns have been fabricated in Si with periods as small as 1.3 mu m using a double patterning technique and an optical direct write tool. The pattern density of a single lithography step is shown to be l... Direct write of optical waveguides on chalcogenide thin films using electron beams [作者：Hoffman, GB; Zhou, W; Sooryakumar, R; Reano, RM,期刊：Journal Of Vacuum Science & Technology B, 页码：2737-2741 , 文章类型： Article，,卷期：2009年27-6] Electron beam induced reliefs in Ge0.2Se0.8 thin films deposited by pulsed laser deposition on oxide coated silicon wafers are fabricated for the direct write of rib optical waveguides at telecommunication wavelengths. T... Self-aligned fabrication of 10 nm wide asymmetric trenches for Si/SiGe heterojunction tunneling field effect transistors using nanoimprint lithography, shadow evaporation, and etching [作者：Wang, C; Chou, SY,期刊：Journal Of Vacuum Science & Technology B, 页码：2790-2794 , 文章类型： Article，,卷期：2009年27-6] Fabrication of an asymmetric source/drain structure is important to heterojunction tunneling transistors but is extremely difficult to achieve reliably due to the stringent requirement of nanometer overlay alignment. Her... Improving field-emission uniformity of large-area W18O49 nanowire films by electrical treatment [作者：Li, ZL; Liu, F; Xu, NS; Chen, J; Deng, SZ,期刊：Journal Of Vacuum Science & Technology B, 页码：2420-2425 , 文章类型： Article，,卷期：2009年27-6] W18O49 nanowires exhibit stable field emission at low fields. To explore the potential application of such nanowires in backlight and display devices, it is necessary to achieve uniform emission on a large area. In the p... Microcolumn design for a large scan field and pixel number [作者：Weigand, H; Gautsch, S; Strohmaier, W; Fleischer, M; Staufer, U; de Rooij, NF; Kern, DP,期刊：Journal Of Vacuum Science & Technology B, 页码：2542-2546 , 文章类型： Article，,卷期：2009年27-6] A different approach in microcolumn design is presented, aiming at a large number of pixels at minimal probe size for the deflected beam. An optimization routine resulted in a seven times magnifying column featuring a mo... Retention-failure mechanism of TaN/CuxO/Cu resistive memory with good data retention capability [作者：Wan, HJ; Zhou, P; Ye, L; Lin, YY; Wu, JG; Wu, H; Chi, MH,期刊：Journal Of Vacuum Science & Technology B, 页码：2468-2471 , 文章类型： Article，,卷期：2009年27-6] Data retention characteristics and a failure mechanism of TaN/CuxO/Cu resistive memory device are investigated by a temperature-accelerated test method. Data retention capability at 85 degrees C is sufficiently longer th... Curing process of silsesquioxane in self-organized diblock copolymer template [作者：Kihara, N; Takizawa, K; Yamamoto, R; Tanaka, H; Hieda, H,期刊：Journal Of Vacuum Science & Technology B, 页码：3025-3030 , 文章类型： Article，,卷期：2009年27-6] In the case that a self-organized diblock copolymer pattern is applied as an etching mask, one of the polymer components is required to have a high etching durability similar to that of silicon oxide. One suitable materi... Submillisecond post-exposure bake of chemically amplified resists by CO2 laser spike annealing [作者：Sha, J; Jung, B; Thompson, MO; Ober, CK; Chandhok, M; Younkin, TR,期刊：Journal Of Vacuum Science & Technology B, 页码：3020-3024 , 文章类型： Article，,卷期：2009年27-6] Pattern formation in a chemically amplified photoresist requires a post-exposure bake (PEB) to catalytically deprotect the polymer. Excessive diffusion of the photogenerated acid results in the loss of line edge definiti... Defectivity issues in topcoatless photoresists [作者：Cantone, J; van Dommelen, Y; Jiang, AQ; Dunn, S; Winter, T; Petrillo, K; Johnson, R; Lawson, P; Conley, W; Callahan, R,期刊：Journal Of Vacuum Science & Technology B, 页码：3014-3019 , 文章类型： Article，,卷期：2009年27-6] One method currently being employed to reduce the overall lithography process complexity and cost is the utilization of a topcoatless photoresist. The development of these materials administers an additive to create the ... Investigation of surface roughness of poly(methylmethacrylate) developed at reduced temperatures [作者：Yan, M; Choi, S; Lee, J; Subramanian, KRV; Adesida, I,期刊：Journal Of Vacuum Science & Technology B, 页码：3010-3013 , 文章类型： Article，,卷期：2009年27-6] The surface roughness of poly(methylmethacrylate) (PMMA) with various molecular weights, using 50 keV electron beam, has been investigated at reduced developer temperatures. As the developer temperature decreased, the ma... Design specific variation in via/contact pattern transfer: Full chip analysis [作者：Choy, JH; Sukharev, V; Markosian, A; Kteyan, A; Granik, Y; Bliznetsov, V,期刊：Journal Of Vacuum Science & Technology B, 页码：2962-2971 , 文章类型： Article，,卷期：2009年27-6] A novel model-based algorithm provides a capability to control full chip design specific variation in pattern transfer caused by via/contact etch processes. This physics-based algorithm is capable of detecting and report... Negative tone molecular resists using cationic polymerization: Comparison of epoxide and oxetane functional groups [作者：Lawson, RA; Noga, DE; Younkin, TR; Tolbert, LM; Henderson, CL,期刊：Journal Of Vacuum Science & Technology B, 页码：2998-3003 , 文章类型： Article，,卷期：2009年27-6] Two molecular resists with a common molecular glass core were synthesized and characterized to compare the differences between epoxide (oxirane) and oxetane functional groups for use in high resolution negative tone mole... Control of the critical dimensions and line edge roughness with pre-organized block copolymer pixelated photoresists [作者：Kang, HM; Kim, YJ; Gopalan, P; Nealey, PF,期刊：Journal Of Vacuum Science & Technology B, 页码：2993-2997 , 文章类型： Article，,卷期：2009年27-6] Sphere-forming polystyrene-block-poly(t-butyl acrylate) (PS-b-PtBA) diblock copolymer with catalytic amounts of photo-acid generator (PAG) formulated a pixelated photoresist. In thin films with single-sphere thickness, h... Thermal development of a calixarene resist [作者：Auzelyte, V; Langner, A; Solak, HH,期刊：Journal Of Vacuum Science & Technology B, 页码：2990-2992 , 文章类型： Article，,卷期：2009年27-6] Thermal development of photoresist films in lithography is an interesting alternative to the common wet development technique, which can result in problems such as swelling, line edge roughness, and pattern collapse. The...