- Formation of Compositionally Abrupt Axial Heterojunctions in Silicon-Germanium Nanowires
[作者:Wen, CY; Reuter, MC; Bruley, J; Tersoff, J; Kodambaka, S; Stach, EA; Ross, FM,期刊:Science, 页码:1247-1250 , 文章类型: Article,,卷期:2009年326-5957]
- We have formed compositionally abrupt interfaces in silicon-germanium (Si-Ge) and Si-SiGe heterostructure nanowires by using solid aluminum-gold alloy catalyst particles rather than the conventional liquid semiconductor-...
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