- InGaN multiquantum well structure with a reduced internal electric field and carrier decay process by tunneling
[作者:Park, YM; Son, JK; Chung, HJ; Sone, C; Park, Y,期刊:Applied Physics Letters, 页码:231917-231917 , 文章类型: Article,,卷期:2009年95-23]
- An InGaN/InGaN multiquantum well (MQW) structure with a reduced internal electric field is grown, and compared with a conventional InGaN/GaN MQW structure. Time-integrated and time-resolved photoluminescence (PL) are mea...
- Nonvolatile resistive switching in graphene oxide thin films
[作者:He, CL; Zhuge, F; Zhou, XF; Li, M; Zhou, GC; Liu, YW; Wang, JZ; Chen, B; Su, WJ; Liu, ZP; Wu, YH; Cui, P; Li, RW,期刊:Applied Physics Letters, 页码:232101-232101 , 文章类型: Article,,卷期:2009年95-23]
- Reliable and reproducible resistive switching behaviors were observed in graphene oxide (GO) thin films prepared by the vacuum filtration method. The Cu/GO/Pt structure showed an on/off ratio of about 20, a retention tim...
- A low field technique for measuring magnetic and magnetoresistance anisotropy coefficients applied to (Ga,Mn)As
[作者:Haigh, JA; Rushforth, AW; King, CS; Edmonds, KW; Campion, RP; Foxon, CT; Gallagher, BL,期刊:Applied Physics Letters, 页码:232102-232102 , 文章类型: Article,,卷期:2009年95-23]
- We demonstrate a simple, low cost, magnetotransport method for rapidly characterizing the magnetic anisotropy and anisotropic magnetoresistance of ferromagnetic devices with uniaxial magnetic anisotropy. This transport t...
- Gas adsorption on graphene doped with B, N, Al, and S: A theoretical study
[作者:Dai, JY; Yuan, JM; Giannozzi, P,期刊:Applied Physics Letters, 页码:232105-232105 , 文章类型: Article,,卷期:2009年95-23]
- The adsorption of several common gas molecules over boron-, nitrogen-, aluminum-, and sulfur-doped graphene was theoretically studied using density-functional theory. B- and N-doped graphene retain a planar form, while A...
- The effect of moisture on the photon-enhanced negative bias thermal instability in Ga-In-Zn-O thin film transistors
[作者:Lee, KH; Jung, JS; Son, KS; Park, JS; Kim, TS; Choi, R; Jeong, JK; Kwon, JY; Koo, B; Lee, S,期刊:Applied Physics Letters, 页码:232106-232106 , 文章类型: Article,,卷期:2009年95-23]
- We investigated the impact of photon irradiation on the stability of gallium-indium-zinc oxide (GIZO) thin film transistors. The application of light on the negative bias temperature stress (NBTS) accelerated the negativ...
- Impact of dopant compensation on the deactivation of boron-oxygen recombination centers in crystalline silicon
[作者:Lim, B; Liu, A; Macdonald, D; Bothe, K; Schmidt, J,期刊:Applied Physics Letters, 页码:232109-232109 , 文章类型: Article,,卷期:2009年95-23]
- The boron-oxygen recombination center responsible for the light-induced degradation of Czochralski silicon solar cells can be permanently deactivated by illumination at elevated temperature. In this study, we examine the...
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