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文章名     作者     期刊名     摘要     卷     期         如果没有找到您所需要的文献，请点击 ——此处申请     共69条记录   Self-ordering mechanism of nanocluster-chain on the functional vicinal surfaces [作者：Wan, JF; Carter, WC,期刊：Applied Physics Letters, 页码：253110-253110 , 文章类型： Article，,卷期：2009年95-25] An energy model of nanoclusters-chain self-organized on the functional vicinal surfaces is established to investigate the self-ordering processes, which provides a promising and challenging nanomaterial-design method by ... Bistable electrical switching and electronic memory effect in a solution-processable graphene oxide-donor polymer complex [作者：Liu, G; Zhuang, XD; Chen, Y; Zhang, B; Zhu, JH; Zhu, CX; Neoh, KG; Kang, ET,期刊：Applied Physics Letters, 页码：253301-253301 , 文章类型： Article，,卷期：2009年95-25] A solution-processable and electroactive complex of poly (N-vinylcarbazole)-derivatized graphene oxide (GO-PVK) was prepared via amidation of end-functionalized PVK, from reversible addition fragmentation chain transfer ... Chemically modified ink-jet printed silver electrodes for organic field-effect transistors [作者：Whiting, GL; Arias, AC,期刊：Applied Physics Letters, 页码：253302-253302 , 文章类型： Article，,卷期：2009年95-25] Modification of ink-jet printed silver source and drain electrodes for organic field-effect transistors (FETs) with the electron acceptor 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F(4)TCNQ) was investigated. ... Hybrid p-n junction light-emitting diodes based on sputtered ZnO and organic semiconductors [作者：Na, JH; Kitamura, M; Arita, M; Arakawa, Y,期刊：Applied Physics Letters, 页码：253303-253303 , 文章类型： Article，,卷期：2009年95-25] We fabricated light-emitting hybrid p-n junction devices using low temperature deposited ZnO and organic films, in which the ZnO and the organic films served as the n- and p-type component, respectively. The devices have... Improved performance of blue phosphorescent organic light-emitting diodes with a mixed host system [作者：Lee, J; Lee, JI; Lee, JY; Chu, HY,期刊：Applied Physics Letters, 页码：253304-253304 , 文章类型： Article，,卷期：2009年95-25] We have investigated a relationship between device performances and host properties in the emissive layer (EML) of iridium (III) bis(4',6'-difluorophenylpyridinato)tetrakis(1-pyrazolyl)borate doped blue phosphorescent or... Proton migration mechanism for the instability of organic field-effect transistors [作者：Sharma, A; Mathijssen, SGJ; Kemerink, M; de Leeuw, DM; Bobbert, PA,期刊：Applied Physics Letters, 页码：253305-253305 , 文章类型： Article，,卷期：2009年95-25] During prolonged application of a gate bias, organic field-effect transistors show an instability involving a gradual shift of the threshold voltage toward the applied gate bias voltage. We propose a model for this insta... Low voltage active pressure sensor based on polymer space-charge-limited transistor [作者：Chao, YC; Lai, WJ; Chen, CY; Meng, HF; Zan, HW; Horng, SF,期刊：Applied Physics Letters, 页码：253306-253306 , 文章类型： Article，,卷期：2009年95-25] Low voltage active pressure sensor is realized by vertically stacking a pressure sensitive rubber on a polymer space-charge-limited transistor. The sensor can be turned on and off by modulating the metal-grid base voltag... High-resolution transparent carbon electrodes for organic field-effect transistors patterned by laser sintering [作者：Wada, H; Mori, T,期刊：Applied Physics Letters, 页码：253307-253307 , 文章类型： Article，,卷期：2009年95-25] Organic transistors are fabricated by selective laser sintering of carbon films formed from carbon solution. This method achieves low-cost and high-resolution carbon electrodes with the channel length down to 2 mu m with... Double wavelength ultraviolet light sensitive organic photodetector [作者：Yan, F; Liu, HH; Li, WL; Chu, B; Su, ZS; Zhang, G; Chen, YR; Zhu, JZ; Yang, DF; Wang, JB,期刊：Applied Physics Letters, 页码：253308-253308 , 文章类型： Article，,卷期：2009年95-25] The authors demonstrate an organic ultraviolet (UV) photodetector (PD) device in which 1,3,5-tris (3-methylphenyl-phenylamino)-triphenyamine and 1,3,5-tris(N-phenylbenzimidazol-2-yl)benzene were used as the electron dono... Effects of gate-first and gate-last process on interface quality of In0.53Ga0.47As metal-oxide-semiconductor capacitors using atomic-layer-deposited Al2O3 and HfO2 oxides [作者：Zhao, H; Huang, J; Chen, YT; Yum, JH; Wang, YZ; Zhou, F; Xue, F; Lee, JC,期刊：Applied Physics Letters, 页码：253501-253501 , 文章类型： Article，,卷期：2009年95-25] We have investigated the effects of gate-first and gate-last process on oxide/InGaAs interface quality using In0.53Ga0.47As metal-oxide-semiconductor capacitors (MOSCAPs) with atomic-layer-deposited (ALD) oxides. Sequenc... Magnetic field dependence of the coupling efficiency of a superconducting transmission line due to the proximity effect [作者：Zhu, S; Zijlstra, T; Golubov, AA; van den Bemt, M; Baryshev, AM; Klapwijk, TM,期刊：Applied Physics Letters, 页码：253502-253502 , 文章类型： Article，,卷期：2009年95-25] The coupling efficiency of a Nb superconducting transmission line has been measured using a Fourier transform spectrometer for different magnetic fields. It is found that the coupling decreases with increasing magnetic f... Gate-to-drain capacitance verifying the continuous-wave green laser crystallization n-TFT trapped charges distribution under dc voltage stress [作者：Hsieh, ZY; Wang, MC; Chen, SY; Chen, C; Huang, HS,期刊：Applied Physics Letters, 页码：253503-253503 , 文章类型： Article，,卷期：2009年95-25] In this work, a metrology was proposed to realize the distribution of fixed oxide trapped charges and grain boundary trapped states. The (continuous-wave green laser crystallization) n-channel thin-film transistors (TFTs... A theoretical study of the initial oxidation of the GaAs(001)-beta 2(2x4) surface [作者：Scarrozza, M; Pourtois, G; Houssa, M; Caymax, M; Stesmans, A; Meuris, M; Heyns, MM,期刊：Applied Physics Letters, 页码：253504-253504 , 文章类型： Article，,卷期：2009年95-25] The early stages of the oxidation of the GaAs(001)-beta 2(2x4) surface are investigated theoretically by ab initio molecular dynamics simulations. An atomistic mechanism of formation of structural defects at the interfac... Quasistatic force and torque on a spherical particle under generalized dielectrophoresis in the vicinity of walls [作者：Lo, YJ; Lei, U,期刊：Applied Physics Letters, 页码：253701-253701 , 文章类型： Article，,卷期：2009年95-25] Quasistatic force and torque were derived on a spherical particle with radius R at a distance h next to a wall, or to the closer wall for case between two parallel walls, under generalized dielectrophoresis using effecti... Bioactive "self-sensing" optical systems [作者：Domachuk, P; Perry, H; Amsden, JJ; Kaplan, DL; Omenetto, FG,期刊：Applied Physics Letters, 页码：253702-253702 , 文章类型： Article，,卷期：2009年95-25] Free-standing silk films are useful materials to manufacture nanopatterned optical elements and to immobilize bio-dopants such as enzymes while maintaining their biological activity. These traits were combined by incorpo... DNA-psoralen: Single-molecule experiments and first principles calculations [作者：Rocha, MS; Lucio, AD; Alexandre, SS; Nunes, RW; Mesquita, ON,期刊：Applied Physics Letters, 页码：253703-253703 , 文章类型： Article，,卷期：2009年95-25] The authors measure the persistence and contour lengths of DNA-psoralen complexes, as a function of psoralen concentration, for intercalated and crosslinked complexes. In both cases, the persistence length monotonically ...