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文章名     作者     期刊名     摘要     卷     期         如果没有找到您所需要的文献，请点击 ——此处申请     共72条记录   Strain effects on the intersubband transitions in GaN/AlN multiple quantum wells grown by low-temperature metal organic vapor phase epitaxy with AlGaN interlayer [作者：Sodabanlu, H; Yang, JS; Sugiyama, M; Shimogaki, Y; Nakano, Y,期刊：Applied Physics Letters, 页码：161908-161908 , 文章类型： Article，,卷期：2009年95-16] The strain in low-temperature-grown GaN/AlN multiple quantum wells (MQWs) have been tailored by inserting an AlGaN interlayer between an AlN template and the MQWs, for the purpose of intersubband transition (ISBT) at sho... Phase partitioning and site-preference of hafnium in the gamma '(L1(2))/gamma(fcc) system in Ni-based superalloys: An atom-probe tomographic and first-principles study [作者：Amouyal, Y; Mao, Z; Seidman, DN,期刊：Applied Physics Letters, 页码：161909-161909 , 文章类型： Article，,卷期：2009年95-16] Atom-probe tomography (APT) and first-principles calculations are employed to investigate the partitioning of Hf in the gamma '(L1(2))/gamma(fcc) phases in two multicomponent Ni-based superalloys. APT results indicate st... Thermal contact resistance between graphene and silicon dioxide [作者：Chen, Z; Jang, W; Bao, W; Lau, CN; Dames, C,期刊：Applied Physics Letters, 页码：161910-161910 , 文章类型： Article，,卷期：2009年95-16] The thermal contact resistance between graphene and silicon dioxide was measured using a differential 3 omega method. The sample thicknesses were 1.2 (single-layer graphene), 1.5, 2.8, and 3.0 nm, as determined by atomic... Correlating dopant distributions and electrical properties of boron-doped silicon nanowires [作者：Schlitz, RA; Perea, DE; Lensch-Falk, JL; Hemesath, ER; Lauhon, LJ,期刊：Applied Physics Letters, 页码：162101-162101 , 文章类型： Article，,卷期：2009年95-16] Quantitative nonuniform radial doping profiles in vapor liquid solid grown boron-doped silicon nanowires are correlated with axial variations in electrical properties. Boron concentrations measured by atom probe tomograp... n-type beta-FeSi2/intrinsic-Si/p-type Si heterojunction photodiodes for near-infrared light detection at room temperature [作者：Shaban, M; Izumi, S; Nomoto, K; Yoshitake, T,期刊：Applied Physics Letters, 页码：162102-162102 , 文章类型： Article，,卷期：2009年95-16] n-Type beta-FeSi2/intrinsic-Si/p-type Si heterojunctions, prepared by facing-targets direct-current sputtering, were evaluated as near-infrared photodetectors. The built-in potential was estimated to be approximately 1 V... Dynamics of free carrier absorption in InN layers [作者：Nargelas, S; Aleksiejunas, R; Vengris, M; Malinauskas, T; Jarasiunas, K; Dimakis, E,期刊：Applied Physics Letters, 页码：162103-162103 , 文章类型： Article，,卷期：2009年95-16] Carrier dynamics in highly excited InN epitaxial layers was investigated in the 1550-2440 nm (0.8-0.51 eV) spectral range by using a femtosecond differential transmission technique. A transition from induced bleaching to... Band offsets of HfO2/ZnO interface: In situ x-ray photoelectron spectroscopy measurement and ab initio calculation [作者：Chen, Q; Yang, M; Feng, YP; Chai, JW; Zhang, Z; Pan, JS; Wang, SJ,期刊：Applied Physics Letters, 页码：162104-162104 , 文章类型： Article，,卷期：2009年95-16] High quality HfO2 dielectrics have been grown on ZnO (0001) substrates. The valence- and conduction-band offsets for HfO2/ZnO (0001) heterojunctions have been determined to be 0.14 +/- 0.05 and 2.29 +/- 0.05 eV, respecti... Electrical resistance switching in Ti added amorphous SiOx [作者：Lin, TY; Chen, LM; Chang, SC; Chin, TS,期刊：Applied Physics Letters, 页码：162105-162105 , 文章类型： Article，,卷期：2009年95-16] Unipolar switching in electrical resistivity is demonstrated in Ti-doped amorphous SiOx with suitable electrodes. We studied stacks of Al(30 nm)/SiOx/Pt, Cu/SiOx/Pt, Cu/Al(2 nm)/SiOx /Pt, and Pt/SiOx/TiN grown on Ti/SiO2... Microwave magnetoabsorption in two-dimensional electron systems [作者：Inarrea, J; Platero, G,期刊：Applied Physics Letters, 页码：162106-162106 , 文章类型： Article，,卷期：2009年95-16] Magnetoabsorption, microwave-induced resistance oscillations, and zero resistance states in two-dimensional systems are calculated in the framework of the same theory: the microwave driven Larmor orbit model. On one hand... Influence of growth temperature and scandium concentration on piezoelectric response of scandium aluminum nitride alloy thin films [作者：Akiyama, M; Kano, K; Teshigahara, A,期刊：Applied Physics Letters, 页码：162107-162107 , 文章类型： Article，,卷期：2009年95-16] The authors have investigated the influence of growth temperature and scandium concentration on the piezoelectric response of scandium aluminum nitride [ScxAl1-xN) films prepared by dual reactive cosputtering. The piezoe... Microscopic origin of bipolar resistive switching of nanoscale titanium oxide thin films [作者：Jeong, HY; Lee, JY; Choi, SY; Kim, JW,期刊：Applied Physics Letters, 页码：162108-162108 , 文章类型： Article，,卷期：2009年95-16] We report a direct observation of the microscopic origin of the bipolar resistive switching behavior in nanoscale titanium oxide films. Through a high-resolution transmission electron microscopy, an analytical transmissi... First-principles study of the electronic properties of Ge dangling bonds at (100)Si1-xGex/SiO2 interfaces [作者：Houssa, M; Afanas'ev, VV; Stesmans, A; Pourtois, G; Meuris, M; Heyns, MM,期刊：Applied Physics Letters, 页码：162109-162109 , 文章类型： Article，,卷期：2009年95-16] First-principles calculations of the electronic properties of (100)Si1-xGex/SiO2 structures, with a Ge dangling bond at the interface, are reported. It is found that the defect level associated with this dangling bond ap... Enhancement of thermoelectric efficiency in oxygen-deficient Sr1-xLaxTiO3-delta ceramics [作者：Liu, J; Wang, CL; Su, WB; Wang, HC; Zheng, P; Li, JC; Zhang, JL; Mei, LM,期刊：Applied Physics Letters, 页码：162110-162110 , 文章类型： Article，,卷期：2009年95-16] We report that the Seebeck coefficient (S) is remarkably enhanced in oxygen-deficient Sr1-xLaxTiO3-delta ceramics. The S values of all oxygen-deficient samples are larger than those of the near-stoichiometric ones and ar... Blueshift of intersubband transition wavelength in AlN/GaN multiple quantum wells by low temperature metal organic vapor phase epitaxy using pulse injection method [作者：Yang, JS; Sodabanlu, H; Sugiyama, M; Nakano, Y; Shimogaki, Y,期刊：Applied Physics Letters, 页码：162111-162111 , 文章类型： Article，,卷期：2009年95-16] AlN/GaN multiquantum wells (MQWs) were grown at different growth temperatures via a metal organic vapor phase epitaxy (MOVPE) system using a pulse injection method and their intersubband transition (ISBT) properties were... High-gain photoconductivity in semiconducting InN nanowires [作者：Chen, RS; Yang, TH; Chen, HY; Chen, LC; Chen, KH; Yang, YJ; Su, CH; Lin, CR,期刊：Applied Physics Letters, 页码：162112-162112 , 文章类型： Article，,卷期：2009年95-16] We report on the photoconductivity study of the individual infrared-absorbing indium nitride (InN) nanowires. Temperature-dependent dark conductivity measurement indicates the semiconducting transport behavior of these I... Ferromagnetic Sc-doped AlN sixfold-symmetrical hierarchical nanostructures [作者：Lei, WW; Liu, D; Zhu, PW; Chen, XH; Zhao, Q; Wen, GH; Cui, QL; Zou, GT,期刊：Applied Physics Letters, 页码：162501-162501 , 文章类型： Article，,卷期：2009年95-16] Sc-doped AlN (AlN:Sc) sixfold-symmetrical hierarchical nanostructures were grown by direct current (dc) arc discharge plasma method using the direct reaction of Al and Sc metals with N-2 gas. Energy-dispersive x-ray spec...