- Thermal infrared detection using dipole antenna-coupled metal-oxide-metal diodes
[作者:Bean, JA; Tiwari, B; Bernstein, GH; Fay, P; Porod, W,期刊:Journal Of Vacuum Science & Technology B, 页码:11-14 , 文章类型: Article,,卷期:2009年27-1]
- This work focuses on dipole antenna-coupled metal-oxide-metal diodes, which can be used for the detection of long wave infrared radiation. These detectors are defined using electron beam lithography and fabricated with s...
- High-k materials and their response to gamma ray radiation
[作者:Zhao, CZ; Taylor, S; Werner, M; Chalker, PR; Potter, RJ; Gaskell, JM; Jones, AC,期刊:Journal Of Vacuum Science & Technology B, 页码:411-415 , 文章类型: Article,,卷期:2009年27-1]
- The radiation response of four different high-k materials has been investigated by irradiating them using a 979 MBq Cs-137 gamma-ray source and a dose absorption rate of 0.71 rad(Si)/s. Acceptorlike electron traps and do...
- Irradiation effect on dielectric properties of hafnium and gadolinium oxide gate dielectrics
[作者:Garcia, H; Duenas, S; Castan, H; Gomez, A; Bailon, L; Barquero, R; Kukli, K; Ritala, M; Leskela, M,期刊:Journal Of Vacuum Science & Technology B, 页码:416-420 , 文章类型: Article,,卷期:2009年27-1]
- Ionizing radiation effects on the electrical properties of HfO2, Gd2O3, and HfO2/SiO2 based metal-oxide-semiconductor (MOS) capacitors have been studied. High-k dielectrics grown by atomic layer deposition and high-press...
- Implanted and irradiated SiO2/Si structure electrical properties at the nanoscale
[作者:Porti, M; Nafria, N; Gerardin, S; Aymerich, X; Cester, A; Paccagnella, A; Ghidini, G,期刊:Journal Of Vacuum Science & Technology B, 页码:421-425 , 文章类型: Article,,卷期:2009年27-1]
- In this work, a conductive atomic force microscope (C-AFM), a scanning capacitance microscope (SCM), and a kelvin probe force microscope (KPFM) have been used to qualitatively study at the nanoscale the electrical proper...
- Detailed characterization of hydrogen silsesquioxane for e-beam applications in a dynamic random access memory pilot line environment
[作者:Keil, K; Choi, KH; Hohle, C; Kretz, J; Szikszai, L; Bartha, JW,期刊:Journal Of Vacuum Science & Technology B, 页码:47-51 , 文章类型: Article,,卷期:2009年27-1]
- Hydrogen silsesquioxane (HSQ) has interesting applications as an electron-beam resist and hardmask. In this work, HSQ was investigated with regard to the postcoat delay, isofocal dose for an optimum process window, a-bea...
- Stress-induced leakage current and random telegraph signal
[作者:Teramoto, A; Kumagai, Y; Abe, K; Fujisawa, T; Watabe, S; Suwa, T; Miyamoto, N; Sugawa, S; Ohmi, T,期刊:Journal Of Vacuum Science & Technology B, 页码:435-438 , 文章类型: Article,,卷期:2009年27-1]
- Stress-induced leakage current (SILO) and random telegraph signal (RTS) in n-type metal-oxide-semiconductor field-effect-transistor (n-MOSFETs) caused by the Fowler-Nordheim tunneling stress are studied by using the auth...
- Breakdown and degradation of ultrathin Hf-based (HfO2)(x)(SiO2)(1-x) gate oxide films
[作者:Uppal, HJ; Mitrovic, IZ; Hall, S; Hamilton, B; Markevich, V; Peaker, AR,期刊:Journal Of Vacuum Science & Technology B, 页码:443-447 , 文章类型: Article,,卷期:2009年27-1]
- Ultrathin films of hafnium oxide (HfO2) and hafnium silicate (HfO2)(x)(SiO2)(1-x) gate stacks (similar to 3 nm) have been subjected to localized electrical stress with a conductive atomic force microscope (C-AFM) in ultr...
- Fabrication of nanoscale bioarrays for the study of cytoskeletal protein binding interactions using nanoimprint lithography
[作者:Schvartzman, M; Nguyen, K; Palma, M; Abramson, J; Sable, J; Hone, J; Sheetz, MP; Wind, SJ,期刊:Journal Of Vacuum Science & Technology B, 页码:61-65 , 文章类型: Article,,卷期:2009年27-1]
- The authors describe a high-throughput patterning process used to create arrays of molecular-scale features for the study of cytoskeletal protein binding interactions. The process uses a shadow-evaporated metal mask to f...
- Latest results from the SEMATECH Berkeley extreme ultraviolet microfield exposure tool
[作者:Naulleau, PP; Anderson, CN; Chiu, J; Dean, K; Denham, P; George, S; Goldberg, KA; Hoef, B; Jones, G; Koh, C; La Fontaine, B; Ma, A; Montgomery, W; Niakoula, D; Park, JO; Wallow, T; Wurm, S,期刊:Journal Of Vacuum Science & Technology B, 页码:66-70 , 文章类型: Article,,卷期:2009年27-1]
- Microfield exposure tools (METs) continue to play a dominant role in the development of extreme ultraviolet resists. One of these tools is the 0.3 numerical aperture SEMATECH Berkeley MET operating as a resist and mask t...
- Study of interface degradation of Hf-silicate gate dielectrics during thermal nitridation process
[作者:Son, SY; Jang, JH; Kumar, P; Singh, RK; Yuh, JH; Cho, H; Kang, CJ,期刊:Journal Of Vacuum Science & Technology B, 页码:71-75 , 文章类型: Article,,卷期:2009年27-1]
- An evaluation of the effect of nitridation temperature on interface layer (IL) quality of Hf-silicate gate dielectric prepared by the atomic layer deposition method has been reported. An increase in IL density and IL rou...
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