- A p-n homojunction ZnO nanorod light-emitting diode formed by As ion implantation - art. no. 253107
[作者:Yang, Y; Sun, XW; Tay, BK; You, GF; Tan, ST; Teo, KL,期刊:Applied Physics Letters, 页码:53107-53107 , 文章类型: Article,,卷期:2008年93-25]
- We report stable and repeatable UV and red electroluminescence (EL) from ZnO nanorod (NR) array light-emitting diodes (LEDs), where the p-type ZnO was formed by As+ ion implantation into the as-grown ZnO NRs. Both doped ...
- High-performance organic integrated circuits based on solution processable polymer-small molecule blends - art. no. 253301
[作者:Smith, J; Hamilton, R; Heeney, M; de Leeuw, DM; Cantatore, E; Anthony, JE; McCulloch, I; Bradley, DDC; Anthopoulos, TD,期刊:Applied Physics Letters, 页码:53301-53301 , 文章类型: Article,,卷期:2008年93-25]
- The prospect of realizing high-performance organic circuits via large-area fabrication is attractive for many applications of organic microelectronics. Here we report solution processed organic field-effect transistors a...
- High efficiency surface-conducted field emission from a ZnO nanotetrapod and MgO nanoparticle composite emitter - art. no. 253501
[作者:Qu, K; Li, C; Hou, K; Yang, XX; Zhang, J; Lei, W; Zhang, XB; Wang, BP; Sun, XW,期刊:Applied Physics Letters, 页码:53501-53501 , 文章类型: Article,,卷期:2008年93-25]
- We report a surface-conducted field emitter made of a ZnO nanotetrapod and MgO nanoparticle composites with a high emission efficiency (similar to 100%) and current (3.77 mA at a gate voltage of 100 V and anode voltage o...
- Effect of temperature on layer separation by plasma hydrogenation - art. no. 254104
[作者:Di, ZF; Wang, YQ; Nastasi, M; Rossi, F; Shao, L; Thompson, PE,期刊:Applied Physics Letters, 页码:54104-54104 , 文章类型: Article,,卷期:2008年93-25]
- We have studied hydrogen diffusion in plasma hydrogenated Si/SiGe/Si heterostructure at different temperatures. At low temperature, intrinsic point defects in the molecular beam epitaxy grown Si capping layer are found t...
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