- Effect of bis-(3-sodiumsulfopropyl disulfide) byproducts on copper defects after chemical mechanical polishing
[作者：Hung, CC; Lee, WH; Hu, SY; Chang, SC; Chen, KW; Wang, YL,期刊：Journal Of Vacuum Science & Technology B, 页码：255-259 , 文章类型： Article，,卷期：2008年26-1]
- In the semiconductor metallization process, the superior gap-fill capability of copper (Cu) electroplating is mainly due to external additives, such as bis-(3-sodiumsulfopropyl disulfide) (SPS), which is used as an accel...
- Junction formation and its device impact through the nodes: From single to coimplants, from beam line to plasma, from single ions to clusters, and from rapid thermal annealing to laser thermal processing
[作者：Gossmann, HJL,期刊：Journal Of Vacuum Science & Technology B, 页码：267-272 , 文章类型： Article，,卷期：2008年26-1]
- The fundamental design goals for a high-performance logic technology, maximizing speed while minimizing power, drive the design of the junctions and in turn the requirements on dopant placement and activation. In the ear...
- Characterization of an ultrashallow junction structure using angle resolved x-ray photoelectron spectroscopy and medium energy ion scattering
[作者：Saheli, G; Conti, G; Uritsky, Y; Foad, MA; Brundle, CR; Mack, P; Kouzminov, D; Werner, M; van den Berg, JA,期刊：Journal Of Vacuum Science & Technology B, 页码：298-304 , 文章类型： Article，,卷期：2008年26-1]
- The control of dose and energy (and therefore depth distribution) of ion implantation in n-channel MOSFET (NMOS) ultrashallow junctions is vital. Therefore there is a need to provide reliable metrology. Since the standar...
- Bragg diffraction, synchrotron x-ray reflectance, and x-ray photoelectron spectroscopy studies of low temperature plasma oxidation of native SiO2 on silicon on insulator
[作者：Bhargava, M; Donner, W; Srivastava, AK; Wolfe, JC,期刊：Journal Of Vacuum Science & Technology B, 页码：305-309 , 文章类型： Article，,卷期：2008年26-1]
- The authors present the application of synchrotron Bragg diffraction, x-ray reflectance (XRR), and x-ray photoelectron spectroscopy (XPS) to study silicon loss in the low temperature plasma oxidation of silicon-on-insula...
- Defect evolution after germanium preamorphization in silicon on insulator structures
[作者：Fazzinia, PF; Cristiano, F; Dupre, C; Claverie, A; Ernst, T; Gavelle, M,期刊：Journal Of Vacuum Science & Technology B, 页码：342-346 , 文章类型： Article，,卷期：2008年26-1]
- Experimental data obtained in bulk and silicon on insulator (SOI) structures by transmission electron microscopy (TEM) are reported showing that the density of extended defects in SOI structures is reduced in comparison ...
- Interaction of the end of range defect band with the upper buried oxide interface for B and BF2 implants in Si and silicon on insulator with and without preamorphizing implant
[作者：Kah, M; Smith, AJ; Hamilton, JJ; Sharp, J; Yeong, SH; Colombeau, B; Gwilliam, R; Webb, RP; Kirkby, KJ,期刊：Journal Of Vacuum Science & Technology B, 页码：347-350 , 文章类型： Article，,卷期：2008年26-1]
- The International Roadmap for Semiconductors requires ultrashallow, highly activated, abrupt dopant profiles in the source/drain extension regions, for technology nodes beyond 45 nm. The authors contrast B and BF2 implan...
- Toward extending the capabilities of scanning spreading resistance microscopy for fin field-effect-transistor-based structures
[作者：Mody, J; Eyben, P; Augendre, E; Richard, O; Vandervorst, W,期刊：Journal Of Vacuum Science & Technology B, 页码：351-356 , 文章类型： Article，,卷期：2008年26-1]
- In this work, the authors investigate the present capabilities of scanning spreading resistance microscopy (SSRM) to map the carrier distribution in fin field-effect-transistor- (FinFET) based structures. Whereas for a p...
- Evolution of fluorine and boron profiles during annealing in crystalline Si
[作者：Lopez, P; Pelaz, L; Duffy, R; Meunier-Beillard, P; Roozeboom, F; van der Tak, K; Breimer, P; van Berkum, JGM; Verheijen, MA; Kaiser, M,期刊：Journal Of Vacuum Science & Technology B, 页码：377-381 , 文章类型： Article，,卷期：2008年26-1]
- In this work the authors study the interaction of F with point defects and the influence of F on B diffusion in crystalline Si. The authors perform 25 and 100 keV F+ implants and combine them with a 40 keV Si+ implant. T...
- B clustering in amorphous Si
[作者：De Salvador, D; Bisognin, G; Di Marino, M; Napolitani, E; Carnera, A; Mirabella, S; Pecora, E; Bruno, E; Priolo, F; Graoui, H; Foad, MA; Boscherini, F,期刊：Journal Of Vacuum Science & Technology B, 页码：382-385 , 文章类型： Article，,卷期：2008年26-1]
- The authors have investigated ultrashallow p(+)/n-junction formation by solid-phase epitaxy, by using x-ray absorption near-edge spectroscopy (XANES) measurements at the B K edge. The authors demonstrate that B clusterin...
- He implantation to control B diffusion in crystalline and preamorphized Si
[作者：Bruno, E; Mirabella, S; Priolo, F; Kuitunen, K; Tuomisto, F; Slotte, J; Giannazzo, F; Bongiorno, C; Raineri, V; Napolitani, E,期刊：Journal Of Vacuum Science & Technology B, 页码：386-390 , 文章类型： Article，,卷期：2008年26-1]
- We demonstrate that He can be a powerful tool to control B diffusion both in crystalline (c-Si) and preamorphized Si (PA-Si). By means of positron annihilation spectroscopy (PAS), we showed in He-implanted c-Si the forma...
- Probing doping conformality in fin shaped field effect transistor structures using resistors
[作者：Vandervorst, W; Jurczak, M; Everaert, JL; Pawlak, BJ; Duffy, R; Del-Agua-Bomiquel, JI; Poon, T,期刊：Journal Of Vacuum Science & Technology B, 页码：396-401 , 文章类型： Article，,卷期：2008年26-1]
- For scaling complementary metal oxide semiconductor devices toward the ITRS goals for the 32 nm technology node and beyond, fin shaped field effect transistor (finFET)-based structures have shown immense potential due to...
- Doping fin field-effect transistor sidewalls: Impurity dose retention in silicon due to high angle incident ion implants and the impact on device performance
[作者：Duffy, R; Curatola, G; Pawlak, BJ; Doornbos, G; van der Tak, K; Breimer, P; van Berkum, JGM; Roozeboom, F,期刊：Journal Of Vacuum Science & Technology B, 页码：402-407 , 文章类型： Article，,卷期：2008年26-1]
- The three dimensional (3D) nature of a fin field-effect transistor (FinFET) structure creates new challenges for an impurity doped region formation. For the triple gate FinFET, both top and side surfaces require high lev...
|