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文章名     作者     期刊名     摘要     卷     期         如果没有找到您所需要的文献，请点击 ——此处申请     共80条记录   Application of a general electron emission equation to surface nonuniformity and current density variation [作者：Jensen, KL; Petillo, JJ; Montgomery, EJ; Pan, ZG; Feldman, DW; O'Shea, PG; Moody, NA; Cahay, M; Yater, JE; Shaw, JL,期刊：Journal Of Vacuum Science & Technology B, 页码：831-837 , 文章类型： Article，,卷期：2008年26-2] Electron emission nonuniformity is a cause of intrinsic emittance from the electron source, and is a consequence of work function variation due to crystal faces and coatings such as cesium, field enhancement effects due ... Toward a lateral carbon nanotube based field emission triode [作者：Monica, AH; Paranjape, M; Coles, GL; Papadakis, SJ; Osiander, R,期刊：Journal Of Vacuum Science & Technology B, 页码：838-841 , 文章类型： Article，,卷期：2008年26-2] In this study, a method of fabricating lateral carbon nanotube (CNT)-based field emission triodes is discussed. The device, tested here in a diode configuration, consists of CNT emitters grown laterally from an etched qu... In situ field emission characterization of multiwalled carbon nanotubes [作者：Smith, RC; Cox, DC; Silva, SRP,期刊：Journal Of Vacuum Science & Technology B, 页码：842-846 , 文章类型： Article，,卷期：2008年26-2] The field emission (FE) properties of carbon nanotubes (CNTs) are measured using nanomanipulators fitted within a scanning electron microscope. We initially investigate a group of randomly arranged CNT at the apex of a c... Field emission properties of single-walled carbon nanotube with amphoteric doping by encapsulation of TTF and TCNQ [作者：Lee, J; Lee, W; Sim, K; Han, SH; Yi, W,期刊：Journal Of Vacuum Science & Technology B, 页码：847-850 , 文章类型： Article，,卷期：2008年26-2] Field emission (FE) currents were measured for prinstine single-walled carbon nanotubes (SWCNTs), and after encapsulation of electron withdrawing and donating molecule, i.e., 7,7,8,8-tetracyano-p-quinodimethane (TCNQ) an... Simulation study on stress and deformation of polymeric patterns during the demolding process in thermal imprint lithography [作者：Song, Z; Choi, J; You, BH; Lee, J; Park, S,期刊：Journal Of Vacuum Science & Technology B, 页码：598-605 , 文章类型： Article，,卷期：2008年26-2] Thermal imprint lithography or hot embossing is a processing technique using molding to produce surface patterns in polymer resist at micro- and nanoscales. While fast molding is important to improve the yield of the pro... Patterning chalcogenide glass by direct resist-free thermal nanoimprint [作者：Solmaz, M; Park, H; Madsen, CK; Cheng, X,期刊：Journal Of Vacuum Science & Technology B, 页码：606-610 , 文章类型： Article，,卷期：2008年26-2] In this article, patterning As2S3 chalcogenide glass is investigated from a nanoimprint perspective. Thermal nanoimprint was used to successfully pattern As2S3 microstructures. Due to the high melt viscosity of As2S3, pa... Assessment of the performance of scanning capacitance microscopy for n-type gallium nitride [作者：Sumner, J; Oliver, RA; Kappers, MJ; Humphreys, CJ,期刊：Journal Of Vacuum Science & Technology B, 页码：611-617 , 文章类型： Article，,卷期：2008年26-2] Six GaN-based test structures were grown on sapphire to assess the effectiveness of scanning capacitance microscopy (SCM) in measuring n-type carrier concentrations in GaN. These structures were designed to test the carr... Fabrication of transparent single wall carbon nanotube films with low sheet resistance [作者：Yim, JH; Kim, YS; Koh, KH; Lee, S,期刊：Journal Of Vacuum Science & Technology B, 页码：851-855 , 文章类型： Article，,卷期：2008年26-2] The authors developed the protocol to fabricate transparent single wall carbon nanotube (SWCNT) films on polyethylene terephthalate (PET) film via spin coating of SWCNT-dispersion solution in dichloroethane (DCE). As it ... Effect of electrical aging on field emission from carbon nanotube field emitter arrays [作者：Ryu, JH; Kim, KS; Lee, CS; Jang, J; Park, KC,期刊：Journal Of Vacuum Science & Technology B, 页码：856-859 , 文章类型： Article，,卷期：2008年26-2] We studied the effect of bias aging on the field emission properties of selectively patterned carbon nanotube field emitter arrays (CNT) grown using the resist-assisted patterning process. After electrical aging using an... Improving the electron emission properties of ion-beam-synthesized Ag-SiO2 nanocomposites by pulsed laser annealing [作者：Tsang, WM; Adikaari, AADT; Stolojan, V; Silva, SRP,期刊：Journal Of Vacuum Science & Technology B, 页码：860-863 , 文章类型： Article，,卷期：2008年26-2] The effects of pulsed laser annealing on the structural and electron field emission (FE) properties of Ag-SiO2 nanocomposites are reported. The nanocomposites were synthesized by Ag+ implantation into thermally oxidized ... Improvement of emission efficiency of nanocrystalline silicon planar cathodes [作者：Shimawaki, H; Neo, Y; Mimura, H; Murakami, K; Wakaya, F; Takai, M,期刊：Journal Of Vacuum Science & Technology B, 页码：864-867 , 文章类型： Article，,卷期：2008年26-2] A planar cathode based on nanocrystalline Si covered with a thin oxide film was fabricated and the emission characteristics were examined. The electron emission occurred at the gate voltage higher than the work function ... Comparative study on temperature-dependent characteristics of InP/InGaAs single- and double-heterojunction bipolar transistors [作者：Chen, WH; Chen, TP; Lee, CJ; Hung, CW; Chu, KY; Chen, LY; Tsai, TH; Liu, WC,期刊：Journal Of Vacuum Science & Technology B, 页码：618-623 , 文章类型： Article，,卷期：2008年26-2] Interesting temperature-dependent characteristics of InP/InGaAs-based single-heterojunction bipolar transistor (SHBT) and double-heterojunction bipolar transistor (DHBT) devices are compared and studied. Experimentally, ... Optimization of electrical characteristics of gadolinium (Gd2O3) incorporated HfO2GaAs n-type metal-oxide semiconductor capacitors with silicon-interface-passivation layer [作者：Il Park, S; Ok, I; Kim, HS; Zhu, F; Zhang, M; Yum, JH; Han, Z; Lee, JC,期刊：Journal Of Vacuum Science & Technology B, 页码：624-626 , 文章类型： Article，,卷期：2008年26-2] The electrical characteristics of Gd2O3-incorporated HfO2 multimetal dielectric n-type doped gallium arsenide (GaAs) metal- oxide semiconductor capacitors with different Gd2O3 and HfO2 thicknesses are investigated. A top... Characteristics of an InGaP/AlXGa1-XAs/GaAs composite-emitter heterojunction bipolar transistor (CEHBT) [作者：Cheng, SY; Chu, KY; Chen, LY; Chen, LA; Liu, WC,期刊：Journal Of Vacuum Science & Technology B, 页码：627-631 , 文章类型： Article，,卷期：2008年26-2] The characteristics of an interesting InGaP/AlXGa1-XAs/GaAs composite-emitter heterojunction bipolar transistor (CEHBT) are studied and demonstrated. By employing an AlXGa1-XAs graded layer between an InGaP emitter and G... Three-dimensional metal patterning over nanostructures by reversal imprint [作者：Peng, C; Cardozo, BL; Pang, SW,期刊：Journal Of Vacuum Science & Technology B, 页码：632-635 , 文章类型： Article，,卷期：2008年26-2] Reversal imprint is used to pattern three-dimensional (3D) metal structures over substrates with complex topography. Metal films are deposited onto SU-8 polymer layers on glass molds, lithographically patterned, and tran... Cold field emission from HfC(310) [作者：Kagarice, KJ; Magera, GG; Pollard, SD; Mackie, WA,期刊：Journal Of Vacuum Science & Technology B, 页码：868-871 , 文章类型： Article，,卷期：2008年26-2] Single crystal HfC was evaluated as a cold field emission (T=300 K, < 1 x 10(-9) Torr) electron source for high-resolution scanning electron microscopy/transmission electron microscopy applications and it is shown to be ...