- Selective growth of CdTe on patterned CdTe/Si(211)
[作者：Seldrum, T; Bommena, R; Samain, L; Dumont, J; Sivananthan, S; Sporken, R,期刊：Journal Of Vacuum Science & Technology B, 页码：1105-1109 , 文章类型： Article，,卷期：2008年26-3]
- The authors have studied selective growth of cadmium telluride on Si(211) by molecular beam epitaxy (MBE). Patterned substrates were produced by optical lithography of MBE-grown CdTe/As/Si(211). Photoemission microscopy ...
- Improved epitaxy of barium titanate by molecular beam epitaxy through a single crystalline magnesium oxide template for integration on hexagonal silicon carbide
[作者：Goodrich, TL; Cai, Z; Losego, MD; Maria, JP; Kourkoutis, LF; Muller, DA; Ziemer, KS,期刊：Journal Of Vacuum Science & Technology B, 页码：1110-1114 , 文章类型： Article，,卷期：2008年26-3]
- Crystalline MgO(111) has the potential to be an effective template for the heteroepitaxial integration of BTO(111) and other functional oxides on 6H-SiC(0001). Deposition of MgO on 6H-SiC(0001) at 140 degrees C resulted ...
- Molecular beam epitaxy growth of metamorphic high electron mobility transistors and metamorphic heterojunction bipolar transistors on Ge and Ge-on-insulator/Si substrates
[作者：Lubyshev, D; Fastenau, JM; Wu, Y; Liu, WK; Bulsara, MT; Fitzgerald, EA; Hoke, WE,期刊：Journal Of Vacuum Science & Technology B, 页码：1115-1119 , 文章类型： Article，,卷期：2008年26-3]
- A direct growth approach using composite metamorphic buffers was employed for monolithic integration of InP-based high electron mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs) on Ge and Ge-on-i...
- Fabrication of periodically polarity-inverted ZnO films
[作者：Minegishi, T; Ishizawa, A; Kim, J; Kim, D; Ahn, S; Park, S; Park, J; Im, I; Oh, DC; Nakano, H; Fujii, K; Jeon, H; Yao, T,期刊：Journal Of Vacuum Science & Technology B, 页码：1120-1123 , 文章类型： Article，,卷期：2008年26-3]
- One-dimensional periodically polarity-inverted (PPI) structures of ZnO for nonlinear optical devices are fabricated on c-plane Al2O3 substrates. To do so, corrugated MgO buffer layers are fabricated by etching after patt...
- High-quality nanothick single-crystal Y2O3 films epitaxially grown on Si (111): Growth and structural characteristics
[作者：Lee, YJ; Lee, WC; Nieh, CW; Yang, ZK; Kortan, AR; Hong, M; Kwo, J; Hsu, CH,期刊：Journal Of Vacuum Science & Technology B, 页码：1124-1127 , 文章类型： Article，,卷期：2008年26-3]
- High-quality single-crystal nanothick Y2O3 films have been grown epitaxially on Si (111) despite a lattice mismatch of 2.4%. The films were electron beam evaporated from pure compacted powder Y2O3 target in ultrahigh vac...
- Molecular beam epitaxy grown Ga2O3(Gd2O3) high kappa dielectrics for germanium passivation-x-ray photoelectron spectroscopy and electrical characteristics
[作者：Lee, CH; Lin, TD; Tung, LT; Huang, ML; Hong, M; Kwo, J,期刊：Journal Of Vacuum Science & Technology B, 页码：1128-1131 , 文章类型： Article，,卷期：2008年26-3]
- Molecular beam epitaxy deposited Ga2O3(Gd2O3) on Ge, without a commonly employed interfacial layer of GeON, has demonstrated excellent electrical properties, such as a high kappa value of 14.5, a low electrical leakage c...
- Oxide scalability in Al2O3/Ga2O3(Gd2O3)/In0.20Ga0.80As/GaAs heterostructures
[作者：Shiu, KH; Chiang, CH; Lee, YJ; Lee, WC; Chang, P; Tung, LT; Hong, M; Kwo, J; Tsai, W,期刊：Journal Of Vacuum Science & Technology B, 页码：1132-1135 , 文章类型： Article，,卷期：2008年26-3]
- The scalability of molecular beam epitaxy grown Ga2O3(Gd2O3)/In0.2Ga0.8As/GaAs with in situ Al2O3 capping layers has been studied, in which the InGaAs surface Fermi level has been unpinned. The electrical and structural ...
- Low-strain InAs/InGaAs/GaAs quantum dots-in-a-well infrared photodetector
[作者：Shenoi, RV; Attaluri, RS; Siroya, A; Shao, J; Sharma, YD; Stintz, A; Vandervelde, TE; Krishna, S,期刊：Journal Of Vacuum Science & Technology B, 页码：1136-1139 , 文章类型： Article，,卷期：2008年26-3]
- The authors report the design, growth, fabrication, and characterization of a low-strain quantum dots-in-a-well (DWELL) infrared photodetector. This novel DWELL design minimizes the inclusion of the lattice-mismatched in...
- Tailoring detection wavelength of InGaAs quantum wire infrared photodetector
[作者：Tsai, CL; Cheng, KY; Chou, ST; Lin, SY; Xu, C; Hsieh, KC,期刊：Journal Of Vacuum Science & Technology B, 页码：1140-1144 , 文章类型： Article，,卷期：2008年26-3]
- The authors report on tailoring detection wavelengths of InGaAs quantum wire infrared photodetectors, using different numbers of short-period superlattice (SPS) pairs to vary the thickness of quantum wires (QWRs) along t...
- nBn detectors based on InAs/GaSb type-II strain layer superlattice
[作者：Bishop, G; Plis, E; Rodriguez, JB; Sharma, YD; Kim, HS; Dawson, LR; Krishna, S,期刊：Journal Of Vacuum Science & Technology B, 页码：1145-1148 , 文章类型： Article，,卷期：2008年26-3]
- We report on a type-II InAs/GaSb strain layer superlattice photodetector using a nBn design with cutoff wavelength of similar to 4.8 mu m at 250 K. The surface component of dark current was eliminated. Using a shallow is...
- Growth and characterization of GaAs1-xSbx barrier layers for advanced concept solar cells
[作者：Bremner, SP; Liu, GM; Faleev, N; Ghosh, K; Honsberg, CB,期刊：Journal Of Vacuum Science & Technology B, 页码：1149-1152 , 文章类型： Article，,卷期：2008年26-3]
- The InAs/GaAsSb material system is a promising medium for the implementation of a quantum dot solar cell due to a favorable valence band alignment. The quantum dot solar cell requires a highly dense, highly ordered array...
- InGaAsP/InP buried-heterostructure laser diodes grown on InP using molecular beam epitaxy and metal-organic chemical vapor deposition
[作者：Pickrell, GW; Zhang, HL; Ren, HW; Zhang, D; Xue, Q; Anselm, KA; Hwang, WY,期刊：Journal Of Vacuum Science & Technology B, 页码：1157-1159 , 文章类型： Article，,卷期：2008年26-3]
- Buried-heterostructure (BH) laser diodes were fabricated using both molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD). MBE was used to grow the active region and the p-type cladding and con...
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