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文章名     作者     期刊名     摘要     卷     期         如果没有找到您所需要的文献，请点击 ——此处申请     共65条记录   Surface bound organic nanowires [作者：Balzer, F; Schiek, M; Rubahn, HG; Al-Shamery, K; Lutzen, A,期刊：Journal Of Vacuum Science & Technology B, 页码：1619-1623 , 文章类型： Article，,卷期：2008年26-4] The results of a comparative study of nanowires grown on single crystalline substrates from para-hexaphenylene, alpha-sexithiophene, and 5,5(')-Di-4-biphenyl-2,2(')-bithiophene are presented. Due to their interesting opt... Effects of oxygen contents in the active channel layer on electrical characteristics of ZnO-based thin film transistors [作者：Moon, YK; Moon, DY; Lee, S; Lee, SH; Park, JW; Jeong, CO,期刊：Journal Of Vacuum Science & Technology B, 页码：1472-1476 , 文章类型： Article，,卷期：2008年26-4] The authors report the fabrication and characteristics of thin film transistors with ZnO channel layers (ZnO TFTs) having different oxygen contents. Also, the authors define the operation mechanism of ZnO TFTs as the var... Impact of near-surface native point defects, chemical reactions, and surface morphology on ZnO interfaces [作者：Doutt, DR; Zgrabik, C; Mosbacker, HL; Brillson, LJ,期刊：Journal Of Vacuum Science & Technology B, 页码：1477-1482 , 文章类型： Article，,卷期：2008年26-4] The authors used a complement of depth-resolved cathodoluminescence spectroscopy (DRCLS), atomic force microscopy (AFM), and Kelvin probe force microscopy (KPFM) to correlate the formation of native point defects with in... Theory of electron tunneling through a scanning tunneling microscopy-tip/quantum dot junction [作者：Kuo, DMT; Chang, YC,期刊：Journal Of Vacuum Science & Technology B, 页码：1483-1487 , 文章类型： Article，,卷期：2008年26-4] Electron transport properties of an isolated quantum dot sandwiched between a metallic contact and a scanning tunneling microscopy tip are theoretically investigated. Keldysh-Green's function technique is used to calcula... Imaging classical and quantum structures in an open quantum dot using scanning gate microscopy [作者：Burke, AM; Aoki, N; Akis, R; Ochiai, Y; Ferry, DK,期刊：Journal Of Vacuum Science & Technology B, 页码：1488-1491 , 文章类型： Article，,卷期：2008年26-4] The authors present scanning gate microscopy (SGM) measurements of an in-plane gated open quantum dot and relate structures within the measurement to a theoretical calculation of the change in conductance in a similar do... Magnetocapacitance effect in InMnAs/InAs p-n heterojunctions [作者：Rangaraju, N; Wessels, BW,期刊：Journal Of Vacuum Science & Technology B, 页码：1526-1529 , 文章类型： Article，,卷期：2008年26-4] The magnetocapacitance characteristics of an epitaxial p-n heterojunction between magnetic InMnAs and InAs are investigated. A large positive magnetocapacitance is observed at room temperature, which increases with rever... Electronic signature of MnAs phases in bare and buried films grown on GaAs(001) [作者：Moreno, M; Kumar, A; Tallarida, M; Ney, A; Ploog, KH; Horn, K,期刊：Journal Of Vacuum Science & Technology B, 页码：1530-1533 , 文章类型： Article，,卷期：2008年26-4] Photoelectron emission spectroscopy analyses of the arsenic bonding in the near-surface region of an initially arsenic-capped MnAs (1 (1) over bar 00) film grown on GaAs(001) have been carried out for progressive thermal... Surface bonding effects in compound semiconductor nanoparticles: II [作者：Farrell, HH,期刊：Journal Of Vacuum Science & Technology B, 页码：1534-1541 , 文章类型： Article，,卷期：2008年26-4] Small nanoparticles have a large proportion of their atoms either at or near the surface, and those in clusters are essentially all on the surface. As a consequence, the details of the surface structure are of paramount ... Steady state and transient behavior of currents in AlGaN/GaN planar Schottky diodes and mechanism of current collapse [作者：Hasegawa, H; Akazawa, M,期刊：Journal Of Vacuum Science & Technology B, 页码：1542-1550 , 文章类型： Article，,卷期：2008年26-4] To get information on the current collapse mechanism under gate bias stress in AlGaN/GaN heterostructure field effect transistors, this article investigates the steady state and transient behavior of current in a planar ... Optimum ambient N-2 pressure during HfAlO pulsed-laser deposition in Pt/SBT/HfAlO/Si field effect transistors [作者：Takahashi, M; Horiuchi, T; Wang, S; Li, QH; Sakai, S,期刊：Journal Of Vacuum Science & Technology B, 页码：1585-1587 , 文章类型： Article，,卷期：2008年26-4] The authors report on optimization of the Hf-Al oxide (HfAlO) buffer-layer deposition conditions in a Pt/SrBi2Ta2O9/HfAlO/Si field effect transistor intended for nonvolatile memory applications. The N-2 pressure during p... Characteristics of lanthanum hafnium oxide deposited by electron cyclotron resonance atomic layer deposition [作者：Kim, WS; Kim, TS; Kang, BW; Ko, MG; Park, SK; Park, JW,期刊：Journal Of Vacuum Science & Technology B, 页码：1588-1591 , 文章类型： Article，,卷期：2008年26-4] Lanthanum hafnium oxide (LHO) thin films were grown using an electron cyclotron resonance atomic layer deposition technique. Tetrakis(ethylmethylamino)hafnium (TEMAHf) and tris(ethylcyclopentadienyl) lanthanum (III) [La(... Generation of dc spin current in a narrow channel with Rashba and Dresselhaus spin-orbit interactions [作者：Tang, CS; Kuan, WH; Xu, W; Chang, YC,期刊：Journal Of Vacuum Science & Technology B, 页码：1624-1627 , 文章类型： Article，,卷期：2008年26-4] The authors consider a finite range ac-biased front gate acting on a quantum channel with Rashba and Dresselhaus spin-orbit interaction effects. The ac-biased gate, giving rise to a dynamical Rashba coupling, causes spin... Dimensionality in metal-oxide-semiconductor field-effect transistors: A comparison of one-dimensional and two-dimensional ballistic transistors [作者：Kim, R; Neophytou, N; Paul, A; Klimeck, G; Lundstrom, MS,期刊：Journal Of Vacuum Science & Technology B, 页码：1628-1631 , 文章类型： Article，,卷期：2008年26-4] One-dimensional (1D) and two-dimensional (2D) metal-oxide-semiconductor field-effect transistors are compared using an approach based on the top-of-the-barrier ballistic transport model. The results for model devices sho... Recent advance in protection technology for extreme ultraviolet lithography masks under low-pressure condition (vol 26, pg L1, 2008) [作者：Kim, JH,期刊：Journal Of Vacuum Science & Technology B, 页码：1450-1450 , 文章类型： Correction，,卷期：2008年26-4] Etching of TiN-based gates for advanced complementary metal-oxide-semiconductor devices [作者：Bliznetsov, V; Singh, N; Kumar, R; Balasubramanian, N; Guo, P; Lee, SJ; Cai, Y,期刊：Journal Of Vacuum Science & Technology B, 页码：1440-1444 , 文章类型： Editorial Material，,卷期：2008年26-4] This article presents results of study and optimization of plasma etching of TiN and TiN-TaN gates for sub-45 mm CMOS technology. By design of experiment in decoupled plasma source using HBr/Cl-2 plasma, etching paramete... Influence of vacuum environment on conductive atomic force microscopy measurements of advanced metal-oxide-semiconductor gate dielectrics [作者：Aguilera, L; Polspoel, W; Volodin, A; Van Haesendonck, C; Porti, M; Vandervorst, W; Nafria, M; Aymerich, X,期刊：Journal Of Vacuum Science & Technology B, 页码：1445-1449 , 文章类型： Editorial Material，,卷期：2008年26-4]