- Study of machine to machine overlay error for sub-60-nm memory devices
[作者:Shin, J; Lee, S; Yeo, J; Kim, H; Lee, J; Han, W,期刊:Journal Of Vacuum Science & Technology B, 页码:2337-2340 , 文章类型: Article,,卷期:2008年26-6]
- According to the 2007 international technology roadmap for semiconductors, the overlay budget of 60 nm memory devices is 11.3 nm. To meet such a tight requirement, each overlay error budget should be controlled carefully...
- Hybridization sensing by electrical enhancement with nanoparticles in nanogap
[作者:Chen, CC; Ko, FH; Chang, EY; Chang, FC; Kuo, SW,期刊:Journal Of Vacuum Science & Technology B, 页码:2572-2577 , 文章类型: Article,,卷期:2008年26-6]
- In this work, the monolayer of gold nanoparticles within 72 nm gap has been proposed to function as a DNA sensor. The authors suggest that the nanoparticles in the nanogap could act as hopping sites which amplify the con...
- Hybrid high resolution lithography (e-beam/deep ultraviolet) and etch process for the fabrication of stacked nanowire metal oxide semiconductor field effect transistors
[作者:Pauliac-Vaujour, S; Comboroure, C; Vizioz, C; Barnola, S; Brianceau, P; Alvaro, VM; Dupre, C; Ernst, T,期刊:Journal Of Vacuum Science & Technology B, 页码:2583-2586 , 文章类型: Article,,卷期:2008年26-6]
- This article highlights some aspects associated with the fabrication of stacked nanowire metal oxide semiconductor field effect transistors (MOSFETs) and more precisely the active area conception. These novel architectur...
- Sputtering limits versus signal-to-noise limits in the observation of Sn balls in a Ga+ microscope
[作者:Castaldo, V; Hagen, CW; Rieger, B; Kruit, P,期刊:Journal Of Vacuum Science & Technology B, 页码:2107-2115 , 文章类型: Article,,卷期:2008年26-6]
- In principle, a scanning ion microscope can produce smaller probe sizes than a scanning electron microscope because the diffraction contribution is smaller. However, the imaging resolution is often severely limited by th...
- Image quality improvement in focused ion beam photomask repair system
[作者:Yasaka, A; Aramaki, F; Muramatsu, M; Kozakai, T; Matsuda, O; Sugiyama, Y; Doi, T; Takaoka, O; Hagiwara, R; Nakamae, K,期刊:Journal Of Vacuum Science & Technology B, 页码:2121-2123 , 文章类型: Article,,卷期:2008年26-6]
- Focused ion beam (FIB) technology has widely been adopted as a defect repair tool on photomasks for semiconductor manufacturing. In the FIB mask repair process, scanning ion image (FIB image) is used for the defect area ...
- Resist charging effect in photomask: Its impact on pattern placement error and critical dimension
[作者:Choi, J; Nam, DS; Kim, BG; Woo, SG; Cho, HK,期刊:Journal Of Vacuum Science & Technology B, 页码:2345-2350 , 文章类型: Article,,卷期:2008年26-6]
- By the development of the double exposure technique or the double patterning technique, the pattern placement error of a photomask is interesting because of its impact on the size and position of wafer pattern. Among var...
- Development of the compact low-energy soft x-ray CT instrument for the soft material structural analysis
[作者:Miyoshi, M; Hamakubo, T; Kodama, T; Tsuchiya, M; Koishikawa, A; Aoki, N,期刊:Journal Of Vacuum Science & Technology B, 页码:2356-2361 , 文章类型: Article,,卷期:2008年26-6]
- Microtomography using the combination of microfocus x-ray source and the cone-beam technique is now becoming widely used in material science and in industry. Recently, the structural analysis of soft materials, such as p...
- X-ray diffraction microscopy: Reconstruction with partial magnitude and spatial a priori information
[作者:Rad, LB; Downes, I; Dai, B; Zhu, DL; Scherz, A; Ye, J; Pianetta, P; Pease, RFW,期刊:Journal Of Vacuum Science & Technology B, 页码:2362-2366 , 文章类型: Article,,卷期:2008年26-6]
- The goal is to nondestructively reconstruct the structure of a fabricated integrated circuit using x-ray diffraction measurement. In particular, to detect any deviation from the specification of the circuit design. Deter...
- Single atom doping for quantum device development in diamond and silicon
[作者:Weis, CD; Schuh, A; Batra, A; Persaud, A; Rangelow, IW; Bokor, J; Lo, CC; Cabrini, S; Sideras-Haddad, E; Fuchs, GD; Hanson, R; Awschalom, DD; Schenkel, T,期刊:Journal Of Vacuum Science & Technology B, 页码:2596-2600 , 文章类型: Article,,卷期:2008年26-6]
- The ability to inject dopant atoms with high spatial resolution, flexibility in dopant species, and high single ion detection fidelity opens opportunities for the study of dopant fluctuation effects and the development o...
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