- Ferroelectric tunable balanced right- and left-handed transmission lines - art. no. 023507
[作者:Marteau, A; Velu, G; Houzet, G; Burgnies, L; Lheurette, E; Carru, JC; Lippens, D,期刊:Applied Physics Letters, 页码:23507-23507 , 文章类型: Article,,卷期:2009年94-2]
- The tuning of the dispersion characteristics of a balanced composite right- and left-handed transmission lines is demonstrated at centimeter and millimeter wavelengths. To this aim, coplanar waveguides, periodically load...
- Specific resistance of Pd/Ir interfaces - art. no. 022112
[作者:Acharyya, R; Nguyen, HYT; Loloee, R; Pratt, WP; Bass, J; Wang, SA; Xia, K,期刊:Applied Physics Letters, 页码:22112-22112 , 文章类型: Article,,卷期:2009年94-2]
- From measurements of the current-perpendicular-to-plane total specific resistance (AR=area times resistance) of sputtered Pd/Ir multilayers, we derive the interface specific resistance, 2AR(Pd/Ir)=1.02 +/- 0.06 f Omega m...
- Carrier transport properties in the vicinity of single self-assembled quantum dots determined by low-voltage cathodoluminescence imaging - art. no. 022113
[作者:Dupuy, E; Morris, D; Pauc, N; Aimez, V; Gendry, M; Drouin, D,期刊:Applied Physics Letters, 页码:22113-22113 , 文章类型: Article,,卷期:2009年94-2]
- We propose a method to investigate the carrier transport properties in the ultrathin wetting layer of a self-assembled quantum dot (QD) structure using low-voltage cathodoluminescence (CL) imaging. Measurements are perfo...
- Nonpolar GaN grown on Si by hydride vapor phase epitaxy using anodized Al nanomask - art. no. 022114
[作者:Polyakov, AY; Markov, AV; Mezhennyi, MV; Govorkov, AV; Pavlov, VF; Smirnov, NB; Donskov, AA; D'yakonov, LI; Kozlova, YP; Malakhov, SS; Yugova, TG; Osinsky, VI; Gorokh, GG; Lyahova, NN; Mityukhlyaev, VB; Pearton, SJ,期刊:Applied Physics Letters, 页码:22114-22114 , 文章类型: Article,,卷期:2009年94-2]
- GaN growth by the hydride vapor phase technique on (100) Si substrates masked by porous Al anodic oxide is described. The masks were prepared by vacuum deposition of Al with subsequent anodic oxidation in dilute sorrel a...
- Long wavelength emissions of periodic yard-glass shaped boron nitride nanotubes - art. no. 023105
[作者:Chen, ZG; Zou, J; Liu, G; Li, F; Cheng, HM; Sekiguchi, T; Gu, M; Yao, XD; Wang, LZ; Lu, GQ,期刊:Applied Physics Letters, 页码:23105-23105 , 文章类型: Article,,卷期:2009年94-2]
- Extraordinary and stable long wavelength emission (centered at similar to 685 nm) from the yard-glass shaped boron nitride nanotubes (YG-BNNTs) was observed in their cathodoluminescence and photoluminescence spectroscopy...
- Field-responsive ion transport in nanopores - art. no. 023106
[作者:Lu, WY; Han, AJ; Kim, T; Punyamurtula, VK; Chen, X; Qiao, Y,期刊:Applied Physics Letters, 页码:23106-23106 , 文章类型: Article,,卷期:2009年94-2]
- The transport behavior of solvated ions in nanopores of a zeolite Y is field responsive. As an external electric field is applied, the observed change in effective solid-liquid interfacial tension is contradictory to the...
- Ellipsoidal InAs quantum dots observed by cross-sectional scanning tunneling microscopy - art. no. 023107
[作者:Blokland, JH; Bozkurt, M; Ulloa, JM; Reuter, D; Wieck, AD; Koenraad, PM; Christianen, PCM; Maan, JC,期刊:Applied Physics Letters, 页码:23107-23107 , 文章类型: Article,,卷期:2009年94-2]
- We report a detailed analysis of the shape, size, and composition of self-assembled InAs quantum dots based on cross-sectional scanning tunneling microscopy (X-STM) experiments. X-STM measurements on 13 individual quantu...
- Dependence of memory margin of Cap-less memory cells on top Si thickness - art. no. 023508
[作者:Choi, KR; Lee, CH; Kim, SJ; Enomoto, H; Shim, TH; Cho, WJ; Park, JG,期刊:Applied Physics Letters, 页码:23508-23508 , 文章类型: Article,,卷期:2009年94-2]
- We investigated the dependence of Cap-less memory on top of silicon with a thickness between 15.5 and 72.3 nm. It was confirmed that the memory margin depends on the impact ionization rate associated with the increased c...
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