- Ferroelectric properties of Pb(Zr,Ti)O-3 thin films until 40 GHz - art. no. 052901
[作者:Defay, E; Lacrevaz, T; Vo, TT; Sbrugnera, V; Bermond, C; Aid, M; Flechet, B,期刊:Applied Physics Letters, 页码:52901-52901 , 文章类型: Article,,卷期:2009年94-5]
- The radio frequency characterization of Cu/TiN/Pb(Zr,Ti)O-3 stack on glass is performed using coplanar transmission lines. A dielectric relaxation is evidenced around 10 GHz by the correlated decrease in the dielectric c...
- The effect of stress on the dielectric and tunable properties of barium stannate titanate thin films - art. no. 052902
[作者:Song, SN; Zhai, JW; Gao, LN; Yao, X,期刊:Applied Physics Letters, 页码:52902-52902 , 文章类型: Article,,卷期:2009年94-5]
- Ba(Sn0.15Ti0.85)O-3 thin films were grown on the LaNiO3 buffered LaAlO3, SrTiO3, MgO, and Al2O3 single crystal substrates, respectively. These substrates provide a systematic change in the stress while maintaining the sa...
- Phonon anomalies in Pb1-xLax(Zr0.9Ti0.1)O-3 ceramics - art. no. 052903
[作者:Buixaderas, E; Gregora, I; Kamba, S; Kuzel, P; Reaney, I,期刊:Applied Physics Letters, 页码:52903-52903 , 文章类型: Article,,卷期:2009年94-5]
- The lattice dynamics of Pb1-xLax(Zr0.9Ti0.1)O-3 (PLZT X/90/10) with X=0, 2, 4, 10% of La was studied by means of Far Infrared, Raman and terahertz spectroscopies in the temperature range of 20-800 K. Infrared active soft...
- Domain structure of (100)/(001)-oriented epitaxial PbTiO3 thick films with various volume fraction of (001) orientation grown by metal organic chemical vapor deposition - art. no. 052906
[作者:Utsugi, S; Fujisawa, T; Ikariyama, R; Yasui, S; Nakaki, H; Yamada, T; Ishikawa, M; Matsushima, M; Morioka, H; Funakubo, H,期刊:Applied Physics Letters, 页码:52906-52906 , 文章类型: Article,,卷期:2009年94-5]
- (100)/(001)-oriented epitaxial PbTiO3 films thicker than 1 mu m were grown on various types of substrates by chemical vapor deposition. The domain structures of these films with different volume fractions of (001) were i...
- Effects of thermal annealing on the emission properties of type-II InAs/GaAsSb quantum dots - art. no. 053101
[作者:Liao, YA; Hsu, WT; Chiu, PC; Chyi, JI; Chang, WH,期刊:Applied Physics Letters, 页码:53101-53101 , 文章类型: Article,,卷期:2009年94-5]
- We report the effects of thermal annealing on the emission properties of type-II InAs quantum dots (QDs) covered by a thin GaAs1-xSbx layer. Apart from large blueshifts and a pronounced narrowing of the QD emission peak,...
- Planar hybrid superlattices by compression of rolled-up nanomembranes - art. no. 053102
[作者:Zander, T; Deneke, C; Malachias, A; Mickel, C; Metzger, TH; Schmidt, OG,期刊:Applied Physics Letters, 页码:53102-53102 , 文章类型: Article,,卷期:2009年94-5]
- Hybrid metal/semiconductor superlattices are obtained by the controlled compression of rolled-up metal/semiconductor nanomembranes. The planar superlattice maintains the crystalline quality of the semiconductor and the p...
- Optical pumping as artificial doping in quantum dots-in-a-well infrared photodetectors - art. no. 053503
[作者:Hoglund, L; Holtz, PO; Pettersson, H; Asplund, C; Wang, Q; Malm, H; Almqvist, S; Petrini, E; Andersson, JY,期刊:Applied Physics Letters, 页码:53503-53503 , 文章类型: Article,,卷期:2009年94-5]
- Resonant optical pumping across the band gap was used as artificial doping in InAs/In0.15Ga0.85As/GaAs quantum dots-in-a-well infrared photodetectors. A selective increase in the electron population in the different quan...
- Atomic layer deposition of LaxZr1-xO2-delta (x=0.25) high-k dielectrics for advanced gate stacks - art. no. 053504
[作者:Tsoutsou, D; Lamagna, L; Volkos, SN; Molle, A; Baldovino, S; Schamm, S; Coulon, PE; Fanciulli, M,期刊:Applied Physics Letters, 页码:53504-53504 , 文章类型: Article,,卷期:2009年94-5]
- Thin LaxZr1-xO2-delta (x=0.25) high permittivity (k) films are grown on Si(100) by atomic layer deposition at 300 degrees C using ((PrCp)-Pr-i)(3)La, (MeCp)(2)ZrMe(OMe) and O-3 species. Their properties are studied by gr...
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