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  • From InSb Nanowires to Nanocubes: Looking for the Sweet Spot
    [作者:Plissard, SR; Slapak, DR; Verheijen, MA; Hocevar, M; Immink, GWG; van Weperen, I; Nadj-Perge, S; Frolov, SM; Kouwenhoven, LP; Bakkers, EPAM,期刊:Nano Letters, 页码:1794-1798 , 文章类型: Article,,卷期:2012年12-4]
  • High aspect ratios are highly desired to fully exploit the one-dimensional properties of indium antimonide nanowires. Here we systematically investigate the growth mechanisms and find parameters leading to long and thin ...
  • Enhanced Carrier Transport along Edges of Graphene Devices
    [作者:Chae, J; Jung, SY; Woo, S; Baek, H; Ha, J; Song, YJ; Son, YW; Zhitenev, NB; Stroscio, JA; Kuk, Y,期刊:Nano Letters, 页码:1839-1844 , 文章类型: Article,,卷期:2012年12-4]
  • The relation between macroscopic charge transport properties and microscopic carrier distribution is one of the central issues in the physics and future applications of graphene devices (GDs). We find strong conductance ...
  • A Nanostructured Electrochromic Supercapacitor
    [作者:Wei, D; Scherer, MRJ; Bower, C; Andrew, P; Ryhanen, T; Steiner, U,期刊:Nano Letters, 页码:1857-1862 , 文章类型: Article,,卷期:2012年12-4]
  • We report the first successful application of an ordered bicontinuous double-gyroid vanadium pentoxide network in an electrochromic supercapacitor. The freestanding vanadia network was fabricated by electrodeposition int...