- Resistive switching phenomenon driven by antiferromagnetic phase separation in an antiperovskite nitride Mn3ZnN
[作者:Sun, YS; Guo, YF; Wang, XX; Tsujimoto, Y; Matsushita, Y; Shi, YG; Wang, C; Belik, AA; Yamaura, K,期刊:Applied Physics Letters, 页码:161907-161907 , 文章类型: Article,,卷期:2012年100-16]
- A resistive-switching phenomenon driven by antiferromagnetic phase separation is observed for a manganese nitride Mn3ZnN, which crystallizes in the antiperovskite structure. Measurements of the lattice parameters, magnet...
- FeNi-based magnetoimpedance multilayers: Tailoring of the softness by magnetic spacers
[作者:Svalov, AV; Fernandez, E; Garcia-Arribas, A; Alonso, J; Fdez-Gubieda, ML; Kurlyandskaya, GV,期刊:Applied Physics Letters, 页码:162410-162410 , 文章类型: Article,,卷期:2012年100-16]
- The microstructure and magnetic properties of sputtered permalloy films and FeNi(170 nm)/X/FeNi(170 nm) (X = Co, Fe, Gd, Gd-Co) sandwiches were studied. Laminating of the thick FeNi film with various spacers was done in ...
- Unusual photoresponse of indium doped ZnO/organic thin film heterojunction
[作者:Vempati, S; Chirakkara, S; Mitra, J; Dawson, P; Nanda, KK; Krupanidhi, SB,期刊:Applied Physics Letters, 页码:162104-162104 , 文章类型: Article,,卷期:2012年100-16]
- Photoresponse of n-type indium-doped ZnO and a p-type polymer (PEDOT:PSS) heterojunction devices are studied, juxtaposed with the photoluminescence of the In-ZnO samples. In addition to the expected photoresponse in the ...
- Dynamic nanomechanics of zinc oxide nanowires
[作者:Wang, LF; Tian, XZ; Yang, SZ; Xu, Z; Wang, WL; Bai, XD,期刊:Applied Physics Letters, 页码:163110-163110 , 文章类型: Article,,卷期:2012年100-16]
- The electromechanical resonances of individual zinc oxide nanowires were induced by alternative current (ac) signals inside a transmission electron micrcrope, which have been used to measure the mechanical quality factor...
- NO-assisted molecular-beam epitaxial growth of nitrogen substituted EuO
[作者:Wicks, R; Altendorf, SG; Caspers, C; Kierspel, H; Sutarto, R; Tjeng, LH; Damascelli, A,期刊:Applied Physics Letters, 页码:162405-162405 , 文章类型: Article,,卷期:2012年100-16]
- We have investigated a method for substituting oxygen with nitrogen in EuO thin films, which is based on molecular beam epitaxy distillation with NO gas as the oxidizer. By varying the NO gas pressure, we produce crystal...
- Phase and thickness dependent modulus of Ge2Sb2Te5 films down to 25 nm thickness
[作者:Won, Y; Lee, J; Asheghi, M; Kenny, TW; Goodson, KE,期刊:Applied Physics Letters, 页码:161905-161905 , 文章类型: Article,,卷期:2012年100-16]
- The mechanical properties of phase-change materials including Ge2Sb2Te5 (GST) are strongly influenced by the complex interaction of phase and imperfection distributions, especially at film thicknesses relevant for phase-...
- Precision quantization of Hall resistance in transferred graphene
[作者:Woszczyna, M; Friedemann, M; Gotz, M; Pesel, E; Pierz, K; Weimann, T; Ahlers, FJ,期刊:Applied Physics Letters, 页码:164106-164106 , 文章类型: Article,,卷期:2012年100-16]
- We show that quantum resistance standards made of transferred graphene reach the uncertainty of semiconductor devices, the current reference system in metrology. A large graphene device (150 x 30 mu m(2)), exfoliated and...
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