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  • Sn diffusion during Ni germanide growth on Ge1-xSnx - art. no. 211905
    [作者:Demeulemeester, J; Schrauwen, A; Nakatsuka, O; Zaima, S; Adachi, M; Shimura, Y; Comrie, CM; Fleischmann, C; Detavernier, C; Temst, K; Vantomme, A,期刊:Applied Physics Letters, 页码:11905-11905 , 文章类型: Article,,卷期:2011年99-21]
  • We report on the redistribution of Sn during Ni germanide formation on Ge1-xSnx/< Ge(100)> and its influence on the thin film growth and properties. These results show that the reaction involves the formation of Ni5Ge3 a...