- Formation of single-orientation epitaxial islands of TiSi2 on Si(001) using Sr passivation - art. no. 03C131
[作者:Posadas, A; Dargis, R; Choi, MR; Slepko, A; Demkov, AA; Kim, JJ; Smith, DJ,期刊:Journal Of Vacuum Science & Technology B, 页码:C3131-C3131 , 文章类型: Article,,卷期:2011年29-3]
- Epitaxial islands of C49-phase TiSi2 of up to 100 nm in size, and with a single crystallographic orientation, have been fabricated on Si(001) substrates. The growth process involves passivation of the Si surface using Sr...
- Self-aligned inversion-channel In0.2Ga0.8As metal-oxide-semiconductor field-effect transistor with molecular beam epitaxy Al2O3/Ga2O3(Gd2O3) as the gate dielectric - art. no. 03C122
[作者:Chang, WH; Chiang, TH; Wu, YD; Hong, M; Lin, CA; Kwo, J,期刊:Journal Of Vacuum Science & Technology B, 页码:C3122-C3122 , 文章类型: Article,,卷期:2011年29-3]
- Self-aligned inversion-channel In0.2Ga0.8As metal-oxide-semiconductor field-effect transistors (MOSFETs) with in situ molecular beam epitaxy grown Al2O3/Ga2O3(Gd2O3) (GGO) as a gate dielectric and a TiN metal gate have b...
- Enhanced normal incidence photocurrent in quantum dot infrared photodetectors - art. no. 03C123
[作者:Shao, JY; Vandervelde, TE; Barve, A; Jang, WY; Stintz, A; Krishna, S,期刊:Journal Of Vacuum Science & Technology B, 页码:C3123-C3123 , 文章类型: Article,,卷期:2011年29-3]
- The authors report an enhancement in the photocurrent caused by normal incidence (s-polarization) radiation in a quantum dot-in-a-well (DWELL) based infrared photodetector. The s-to-p polarization ratio was increased to ...
- Single-crystalline aluminum grown on MgAl2O4 spinel using molecular-beam epitaxy - art. no. 03C128
[作者:Lin, Y; Norman, AG; McMahon, WE; Moutinho, HR; Jiang, CS; Ptak, AJ,期刊:Journal Of Vacuum Science & Technology B, 页码:C3128-C3128 , 文章类型: Article,,卷期:2011年29-3]
- Al thin films were grown on MgAl2O4 spinel substrates using solid-source molecular-beam epitaxy. The structural properties of Al layers were systematically investigated as a function of substrate orientation and growth t...
- Growth and thermal conductivity analysis of polycrystalline GaAs on chemical vapor deposition diamond for use in thermal management of high-power semiconductor lasers - art. no. 03C130
[作者:Clark, SPR; Ahirwar, P; Jaeckel, FT; Hains, CP; Albrecht, AR; Rotter, TJ; Dawson, LR; Balakrishnan, G; Hopkins, PE; Phinney, LM; Hader, J; Moloney, JV,期刊:Journal Of Vacuum Science & Technology B, 页码:C3130-C3130 , 文章类型: Article,,卷期:2011年29-3]
- The authors demonstrate the growth of polycrystalline GaAs thin films on polycrystalline chemical vapor deposition (CVD) diamond by low-temperature molecular beam epitaxy. The low-temperature GaAs (LT-GaAs) layer is easi...
- High In content InxGa1-xN grown by energetic neutral atom beam lithography and epitaxy under slightly N-rich conditions - art. no. 03C132
[作者:Williamson, TL; Williams, JJ; Hubbard, JCD; Hoffbauer, MA,期刊:Journal Of Vacuum Science & Technology B, 页码:C3132-C3132 , 文章类型: Article,,卷期:2011年29-3]
- Two series of In-rich InGaN films with compositions of similar to 25% and similar to 35% In, grown over a substrate temperature range from 490 to 620 degrees C, show how the film properties improve as the growth temperat...
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