- Characterization of NbAlO dielectric film deposited on InP - art. no. 01A803
[作者:He, DW; Cheng, XH; Xu, DW; Wang, ZJ; Yu, YH; Sun, QQ; Zhang, DW,期刊:Journal Of Vacuum Science & Technology B, 页码:A1803-A1803 , 文章类型: Article,,卷期:2011年29-1]
- In this work, NbAlO dielectric films were grown by atomic layer deposition method on InP substrate and were treated with rapid thermal annealing (RTA) process at 500 degrees C. Synchrotron radiation x-ray reflectivity me...
- Impact of halo implant on the hot carrier reliability of germanium p-channel metal-oxide-semiconductor field-effect transitors - art. no. 01A804
[作者:Franco, J; Eneman, G; Kaczer, B; Mitard, J; De Jaeger, B; Groeseneken, G,期刊:Journal Of Vacuum Science & Technology B, 页码:A1804-A1804 , 文章类型: Article,,卷期:2011年29-1]
- Hot carrier (HC) reliability of Si-passivated, Ge channel, p-channel metal-oxide-semiconductor field-effect transitors (pMOSFETs) with a physical gate length of 70 nm is investigated in this article. HCs are reported to ...
- Analysis of leakage current mechanisms in RuO2-TiO2-RuO2 MIM structures - art. no. 01AC08
[作者:Racko, J; Mikolasek, M; Harmatha, L; Breza, J; Hudec, B; Frohlich, K; Aarik, J; Tarre, A; Granzner, R; Schwierz, F,期刊:Journal Of Vacuum Science & Technology B, 页码:AC108-AC108 , 文章类型: Article,,卷期:2011年29-1]
- We present an advanced model of current transport in MIM structures and demonstrate its possible utilization in analyzing the leakage current in RuO2-TiO2-RuO2 metal-insulator-metal structures. The model comprehends an i...
- Atomic layer deposition grown metal-insulator-metal capacitors with RuO2 electrodes and Al-doped rutile TiO2 dielectric layer - art. no. 01AC09
[作者:Hudec, B; Husekova, K; Dobrocka, E; Aarik, J; Rammula, R; Kasikov, A; Tarre, A; Vincze, A; Frohlich, K,期刊:Journal Of Vacuum Science & Technology B, 页码:AC109-AC109 , 文章类型: Article,,卷期:2011年29-1]
- Metal-insulator-metal structures for dynamic random access memory capacitor applications were prepared by atomic layer deposition. Rutile TiO2 dielectric layers were grown on top of RuO2 electrodes. TiO2 layers were dope...
- Fabrication of flexible ultracapacitor/galvanic cell hybrids using advanced nanoparticle coating technology - art. no. 011008
[作者:Peckerar, M; Dornajafi, M; Dilli, Z; Goldsman, N; Ngu, Y; Boerger, B; Van Wyck, N; Gravelin, J; Grenon, B; Proctor, RB; Lowy, DA,期刊:Journal Of Vacuum Science & Technology B, 页码:11008-11008 , 文章类型: Article,,卷期:2011年29-1]
- Ultracapacitors represent an essential storage element in a variety of hybrid energy sources, ranging from automobile power systems to low-power motes in a distributed sensor network. Hydrated ruthenium (IV) oxide has de...
- Accuracy of thickness measurement for Ge epilayers grown on SiGe/Ge/Si(100) heterostructure by x-ray diffraction and reflectivity - art. no. 011010
[作者:Liu, XC; Myronov, M; Dobbie, A; Nguyen, V; Leadley, DR,期刊:Journal Of Vacuum Science & Technology B, 页码:11010-11010 , 文章类型: Article,,卷期:2011年29-1]
- High-resolution x-ray diffraction rocking curve (RC), x-ray reflectivity (XRR), and transmission electron microscopy (TEM) were used to characterize strained Ge epilayers grown on relaxed SiGe/Ge/Si(100) virtual substrat...
- High quality epitaxial Dy3Ge5 films grown on Ge(001) substrates - art. no. 01A805
[作者:Bhuiyan, NK; Menghini, M; Locquet, JP; Seo, JW; Marchiori, C,期刊:Journal Of Vacuum Science & Technology B, 页码:A1805-A1805 , 文章类型: Article,,卷期:2011年29-1]
- Dy thin films are grown on Ge(001) substrates by molecular beam deposition at room temperature. Subsequently, the Dy films are annealed at a high temperature of 550 degrees C for the growth of Dy3Ge5 films. Structural, m...
- Atomic layer deposition temperature dependent minority carrier generation in ZrO2/GeO2/Ge capacitors - art. no. 01A806
[作者:Bethge, O; Abermann, S; Henkel, C; Smoliner, J; Bertagnolli, E; Straif, CJ; Hutter, H,期刊:Journal Of Vacuum Science & Technology B, 页码:A1806-A1806 , 文章类型: Article,,卷期:2011年29-1]
- Low leakage ZrO2 dielectrics with a thickness of 7 nm are grown by means of atomic layer deposition (ALD) on GeO2-passivated Ge substrates. Substrate temperatures during the deposition of ZrO2 are set to 150 and 250 degr...
- On the role of Ti adlayers for resistive switching in HfO2-based metal-insulator-metal structures: Top versus bottom electrode integration - art. no. 01AD02
[作者:Walczyk, C; Wenger, C; Walczyk, D; Lukosius, M; Costina, I; Fraschke, M; Dabrowski, J; Fox, A; Wolansky, D; Thiess, S; Miranda, E; Tillack, B; Schroeder, T,期刊:Journal Of Vacuum Science & Technology B, 页码:AD102-AD102 , 文章类型: Article,,卷期:2011年29-1]
- The authors demonstrate bipolar resistive switching in TiN/HfO2/Ti(top)/TiN devices using a (Bi) complementary metal-oxide semiconductor (CMOS) compatible technology process. The device performance includes a cycling end...
- Temperature dependence of the resistance switching effect studied on the metal/YBa2Cu3O6+x planar junctions - art. no. 01AD04
[作者:Tomasek, M; Plecenik, T; Truchly, M; Noskovic, J; Roch, T; Zahoran, M; Chromik, S; Spankova, M; Kus, P; Plecenik, A,期刊:Journal Of Vacuum Science & Technology B, 页码:AD104-AD104 , 文章类型: Article,,卷期:2011年29-1]
- The resistive switching (RS) effect observed in capacitorlike metal/insulator/metal junctions belongs to the most promising candidates for next generation of memory cell technology. It is based on a sudden change of the ...
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