- Mechanism of V-FB/V-TH shift in Dysprosium incorporated HfO2 gate dielectric n-Type Metal-Oxide-Semiconductor devices - art. no. 021209
[作者:Lee, T; Choi, K; Ando, T; Park, DG; Gribelyuk, MA; Kwon, U; Banerjee, SK,期刊:Journal Of Vacuum Science & Technology B, 页码:21209-21209 , 文章类型: Article,,卷期:2011年29-2]
- The authors discuss temperature-dependent dysprosium (Dy) diffusion and the diffusion-driven Dy-silicate formation process in Dy incorporated HfO2. The Dy-induced dipoles are closely related to the Dy-silicate formation ...
- Enhanced resolution and groove-width simulation in cold development of ZEP520A - art. no. 021604
[作者:Okada, T; Fujimori, J; Aida, M; Fujimura, M; Yoshizawa, T; Katsumura, M; Iida, T,期刊:Journal Of Vacuum Science & Technology B, 页码:21604-21604 , 文章类型: Article,,卷期:2011年29-2]
- Cold development of positive-tone resist ZEP520A (Nippon Zean) in electron-beam lithography needs quantitative analysis for further improvement in resolution. Contrast curves and groove widths in cold development of ZEP5...
- Electrical and structural properties of ultrathin SiON films on Si prepared by plasma nitridation - art. no. 022201
[作者:Hourdakis, E; Nassiopoulou, AG; Parisini, A; Reading, MA; van den Berg, JA; Sygellou, L; Ladas, S; Petrik, P; Nutsch, A; Wolf, M; Roeder, G,期刊:Journal Of Vacuum Science & Technology B, 页码:22201-22201 , 文章类型: Article,,卷期:2011年29-2]
- The authors combined electrical and structural characterizations with analytical and spectroscopic measurements in order to fully analyze oxynitride nanofilms on Si that were produced in a minibatch type plasma nitridati...
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