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  • Terahertz quantum cascade lasers based on type II InGaAs/GaAsSb/InP
    [作者:Deutsch, C; Benz, A; Detz, H; Klang, P; Nobile, M; Andrews, AM; Schrenk, W; Kubis, T; Vogl, P; Strasser, G; Unterrainer, K,期刊:Applied Physics Letters, 页码:261110-261110 , 文章类型: Article,,卷期:2010年97-26]
  • We report the demonstration of a terahertz quantum cascade laser based on the In0.53Ga0.47As/GaAs0.51Sb0.49 type II material system. The combination of low effective electron masses and a moderate conduction band offset ...
  • Interface roughness scattering in laterally coupled InGaAs quantum wires
    [作者:Kunets, VP; Teodoro, MD; Dorogan, VG; Lytvyn, PM; Tarasov, GG; Sleezer, R; Ware, ME; Mazur, YI; Krasinski, JS; Salamo, GJ,期刊:Applied Physics Letters, 页码:262103-262103 , 文章类型: Article,,卷期:2010年97-26]
  • Conductivity of In0.38Ga0.62As quantum wires grown on the (311) A plane of GaAs was studied using temperature dependent Hall effect. Detailed analysis of the scattering phenomena which control electron mobility along the...
  • Coherent heteroepitaxy of Bi2Se3 on GaAs (111)B
    [作者:Richardella, A; Zhang, DM; Lee, JS; Koser, A; Rench, DW; Yeats, AL; Buckley, BB; Awschalom, DD; Samarth, N,期刊:Applied Physics Letters, 页码:262104-262104 , 文章类型: Article,,卷期:2010年97-26]
  • We report the heteroepitaxy of single crystal thin films of Bi2Se3 on the (111)B surface of GaAs by molecular beam epitaxy. We find that Bi2Se3 grows highly c-axis oriented, with an atomically sharp interface with the Ga...