- Scattering focusing and localized surface plasmons in a single Ag nanoring
[作者:Zhang, Q; Shan, XY; Zhou, L; Zhan, TR; Wang, CX; Li, M; Jia, JF; Zi, JA; Wang, QQ; Xue, QK,期刊:Applied Physics Letters, 页码:261107-261107 , 文章类型: Article,,卷期:2010年97-26]
- We investigate the far-field scattering property of a single Ag nanoring. Under oblique excitation, two-focus scatterings with distinct intensities were observed. We show that the two-focus scatterings result from the in...
- Characterizing ultrashort optical pulses using second-order nonlinear nanoprobes
[作者:Li, HF; Zhang, Z; Xu, QA; Shi, KB; Jia, YS; Zhang, BG; Xu, Y; Liu, ZW,期刊:Applied Physics Letters, 页码:261108-261108 , 文章类型: Article,,卷期:2010年97-26]
- We report a second-order nonlinear nanoprobe for characterizing ultrafast optical near fields. The proposed nanoprobe comprises second harmonic nanocrystals attached to a carbon nanotube, which is in turn attached to a s...
- Waveguiding-assisted random lasing in epitaxial ZnO thin film
[作者:Dupont, PH; Couteau, C; Rogers, DJ; Teherani, FH; Lerondel, G,期刊:Applied Physics Letters, 页码:261109-261109 , 文章类型: Article,,卷期:2010年97-26]
- Zinc oxide thin films were grown on c-sapphire substrates using pulsed laser deposition. Pump power dependence of surface emission spectra, acquired using a quadrupled 266 nm laser, revealed room temperature stimulated e...
- Single-electron transfer between two donors in nanoscale thin silicon-on-insulator field-effect transistors
[作者:Hamid, E; Moraru, D; Tarido, JC; Miki, S; Mizuno, T; Tabe, M,期刊:Applied Physics Letters, 页码:262101-262101 , 文章类型: Article,,卷期:2010年97-26]
- We describe single-electron transfer between two donors in thin silicon-on-insulator field-effect transistors with phosphorus-doped channel. At low temperatures, single-electron tunneling through one donor can be identif...
- Current-driven domain wall motion across a wide temperature range in a (Ga,Mn)(As,P) device
[作者:Wang, KY; Edmonds, KW; Irvine, AC; Tatara, G; De Ranieri, E; Wunderlich, J; Olejnik, K; Rushforth, AW; Campion, RP; Williams, DA; Foxon, CT; Gallagher, BL,期刊:Applied Physics Letters, 页码:262102-262102 , 文章类型: Article,,卷期:2010年97-26]
- Current-driven magnetic domain wall motion is demonstrated in the quaternary ferromagnetic semiconductor (Ga,Mn)(As,P) at temperatures well below the ferromagnetic transition temperature, with critical currents of the or...
- Terahertz quantum cascade lasers based on type II InGaAs/GaAsSb/InP
[作者:Deutsch, C; Benz, A; Detz, H; Klang, P; Nobile, M; Andrews, AM; Schrenk, W; Kubis, T; Vogl, P; Strasser, G; Unterrainer, K,期刊:Applied Physics Letters, 页码:261110-261110 , 文章类型: Article,,卷期:2010年97-26]
- We report the demonstration of a terahertz quantum cascade laser based on the In0.53Ga0.47As/GaAs0.51Sb0.49 type II material system. The combination of low effective electron masses and a moderate conduction band offset ...
- Cavity-involved plasmonic metamaterial for optical polarization conversion
[作者:Li, T; Wang, SM; Cao, JX; Liu, H; Zhu, SN,期刊:Applied Physics Letters, 页码:261113-261113 , 文章类型: Article,,卷期:2010年97-26]
- We experimentally demonstrate a plasmonic assisted Fabry-Perot cavity in a metal/insulator/metal trilayer structure with L-shaped hole arrays inside, which significantly contribute to the mechanism to realize a nearly co...
- Interface roughness scattering in laterally coupled InGaAs quantum wires
[作者:Kunets, VP; Teodoro, MD; Dorogan, VG; Lytvyn, PM; Tarasov, GG; Sleezer, R; Ware, ME; Mazur, YI; Krasinski, JS; Salamo, GJ,期刊:Applied Physics Letters, 页码:262103-262103 , 文章类型: Article,,卷期:2010年97-26]
- Conductivity of In0.38Ga0.62As quantum wires grown on the (311) A plane of GaAs was studied using temperature dependent Hall effect. Detailed analysis of the scattering phenomena which control electron mobility along the...
- Coherent heteroepitaxy of Bi2Se3 on GaAs (111)B
[作者:Richardella, A; Zhang, DM; Lee, JS; Koser, A; Rench, DW; Yeats, AL; Buckley, BB; Awschalom, DD; Samarth, N,期刊:Applied Physics Letters, 页码:262104-262104 , 文章类型: Article,,卷期:2010年97-26]
- We report the heteroepitaxy of single crystal thin films of Bi2Se3 on the (111)B surface of GaAs by molecular beam epitaxy. We find that Bi2Se3 grows highly c-axis oriented, with an atomically sharp interface with the Ga...
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