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文章名     作者     期刊名     摘要     卷     期         如果没有找到您所需要的文献，请点击 ——此处申请     共95条记录   Direct acoustic phonon excitation by intense and ultrashort terahertz pulses [作者：Manceau, JM; Loukakos, PA; Tzortzakis, S,期刊：Applied Physics Letters, 页码：251904-251904 , 文章类型： Article，,卷期：2010年97-25] We report on the direct and resonant excitation of acoustic phonons in an AlGaAs intrinsic semiconductor using intense coherent and single cycle terahertz pulses created by two-color femtosecond laser pulse filamentation... Metal-organic frameworks as promising candidates for future ultralow-k dielectrics [作者：Zagorodniy, K; Seifert, G; Hermann, H,期刊：Applied Physics Letters, 页码：251905-251905 , 文章类型： Article，,卷期：2010年97-25] A class of Zn4O(CO2)(6)-based metal-organic frameworks (MOFs) is theoretically analyzed with respect to suitability as an interlayer dielectric material for applications in semiconducting devices. The static dielectric c... Piezoelectric characteristic of nanocrystalline AlN films obtained by pulsed laser deposition at room temperature [作者：Cibert, C; Dutheil, P; Champeaux, C; Masson, O; Trolliard, G; Tetard, F; Catherinot, A,期刊：Applied Physics Letters, 页码：251906-251906 , 文章类型： Article，,卷期：2010年97-25] Aluminum nitride (AlN) thin films were deposited at room temperature by pulsed laser deposition, and their nanostructure and piezoelectric properties were investigated as a function of fluence. For all fluences, the film... In vacancies in InN grown by plasma-assisted molecular beam epitaxy [作者：Reurings, F; Tuomisto, F; Gallinat, CS; Koblmuller, G; Speck, JS,期刊：Applied Physics Letters, 页码：251907-251907 , 文章类型： Article，,卷期：2010年97-25] The authors have applied positron annihilation spectroscopy to study the effect of different growth conditions on vacancy formation in In-and N-polar InN grown by plasma-assisted molecular beam epitaxy. The results sugge... Equations of state for energetic materials from density functional theory with van der Waals, thermal, and zero-point energy corrections [作者：Landerville, AC; Conroy, MW; Budzevich, MM; Lin, Y; White, CT; Oleynik, II,期刊：Applied Physics Letters, 页码：251908-251908 , 文章类型： Article，,卷期：2010年97-25] It is shown that the introduction of zero-point energy and thermal effects to density functional theory with an empirical van der Waals correction results in a significant improvement in the prediction of equilibrium vol... Vacancy clustering and diffusion in heavily P doped Si [作者：Hin, C; Dresselhaus, M; Chen, G,期刊：Applied Physics Letters, 页码：251909-251909 , 文章类型： Article，,卷期：2010年97-25] A kinetic Monte Carlo (KMC) algorithm with a vacancy source and sink has been developed to determine the equilibrium vacancy concentration (C-V(e)) in Si1-xPx alloys. KMC results for C-V(e) exhibit good agreement with th... Combined light and electron scattering for exploring hydrogen in thin metallic films [作者：Prinz, J; Palsson, GK; Korelis, PT; Hjorvarsson, B,期刊：Applied Physics Letters, 页码：251910-251910 , 文章类型： Article，,卷期：2010年97-25] We present a method, combining optical transmission with electrical resistance, to study the hydrogen uptake in thin transition metal films. The change in optical transmission is used to determine the hydrogen concentrat... In-depth analysis of the CuIn1-xGaxSe2 film for solar cells, structural and optical characterization [作者：Slobodskyy, A; Slobodskyy, T; Ulyanenkova, T; Doyle, S; Powalla, M; Baumbach, T; Lemmer, U,期刊：Applied Physics Letters, 页码：251911-251911 , 文章类型： Article，,卷期：2010年97-25] Space-resolved x-ray diffraction measurements of gradient-etched CuIn1-xGaxSe2 (CIGS) solar cells provide information about stress and texture depth profiles in the absorber layer. An important parameter of CIGS layer gr... The growth and radial analysis of Si/Ge core-shell nanowires [作者：Chang, HK; Lee, SC,期刊：Applied Physics Letters, 页码：251912-251912 , 文章类型： Article，,卷期：2010年97-25] Si/Ge core-shell nanowires, which possess uniform diameters around 100 nm, were synthesized at low temperature using a chemical vapor deposition process. The radial structures of Si/Ge nanowires were investigated via cro... Shock-free ferroelectric liquid crystal displays with high optical contrast [作者：Lapanik, V; Bezborodov, V; Timofeev, S; Haase, W,期刊：Applied Physics Letters, 页码：251913-251913 , 文章类型： Article，,卷期：2010年97-25] Shock-free ferroelectric liquid crystal displays with high optical contrast and low operating voltage are the concern of this contribution. Ferroelectric liquid crystal compositions with a wide temperature range of the c... Tuning the period of elastic MnAs/GaAs(001) alpha-beta pattern by Fe deposition [作者：Vidal, F; Spezzani, C; Breitwieser, R; Marangolo, M; Eddrief, M; Sacchi, M; Etgens, VH,期刊：Applied Physics Letters, 页码：251914-251914 , 文章类型： Article，,卷期：2010年97-25] The alpha-beta elastic striped pattern of MnAs/GaAs(001) is shown to be perturbed by Fe overlayer growth. After nanometric Fe thin film deposition, the elastic pattern is still present in the 10-45 degrees C temperature ... Improving the plasticity of a high strength Fe-Si-Ti ultrafine composite by introduction of an immiscible element [作者：Park, JM; Kim, DH; Kim, KB; Eckert, J,期刊：Applied Physics Letters, 页码：251915-251915 , 文章类型： Article，,卷期：2010年97-25] A heterostructured Fe71Si15Ti10Cu4 ultrafine composite has been developed. The addition of Cu with large positive enthalpy of mixing with the main constituent element (Fe) leads to evolution of a unique microstructure wi... Observation of the integer quantum Hall effect in high quality, uniform wafer-scale epitaxial graphene films [作者：Pan, W; Howell, SW; Ross, AJ; Ohta, T; Friedmann, TA,期刊：Applied Physics Letters, 页码：252101-252101 , 文章类型： Article，,卷期：2010年97-25] We report the observation of the integer quantum Hall states at Landau level fillings of nu=2, 6, and 10 in a Hall bar device made of a single-layer epitaxial graphene film on the silicon-face of silicon-carbide prepared... Tunneling characteristics of graphene [作者：Shin, YJ; Kalon, G; Son, J; Kwon, JH; Niu, J; Bhatia, CS; Liang, GC; Yang, H,期刊：Applied Physics Letters, 页码：252102-252102 , 文章类型： Article，,卷期：2010年97-25] Negative differential conductance and tunneling characteristics of two-terminal graphene devices are observed before and after electric breakdown, respectively. The former is caused by the strong scattering under a high ... Relationship of deep defects to oxygen and hydrogen content in nanocrystalline silicon photovoltaic materials [作者：Hugger, PG; Cohen, JD; Yan, BJ; Yue, GZ; Yang, J; Guha, S,期刊：Applied Physics Letters, 页码：252103-252103 , 文章类型： Article，,卷期：2010年97-25] We report measurements of the structural and compositional properties of a range of hydrogenated nanocrystalline films. We employed Raman spectroscopy for crystallinity and time-of-flight secondary ion mass spectroscopy ... Synchronized single electron emission from dynamical quantum dots [作者：Mirovsky, P; Kaestner, B; Leicht, C; Welker, AC; Weimann, T; Pierz, K; Schumacher, HW,期刊：Applied Physics Letters, 页码：252104-252104 , 文章类型： Article，,卷期：2010年97-25] We study synchronized quantized charge pumping through several dynamical quantum dots (QDs) driven by a single time modulated gate signal. We show that the main obstacle for synchronization being the lack of uniformity c...