- Nonpropagating X-shaped acoustic waves in sonic crystals without defects
[作者:Kan, WW; Liang, B; Zhu, XF; Tu, JA; Zou, XY; Cheng, JC,期刊:Applied Physics Letters, 页码:223504-223504 , 文章类型: Article,,卷期:2010年97-22]
- Three-dimensional localization of acoustic waves is investigated for a two-dimensional sonic crystal without defects. By studying the wave packet superposed by Bloch modes at the isofrequency surface, we predict the exis...
- Fabrication of p-channel thin-film transistors using CuO active layers deposited at low temperature
[作者:Sung, SY; Kim, SY; Jo, KM; Lee, JH; Kim, JJ; Kim, SG; Chai, KH; Pearton, SJ; Norton, DP; Heo, YW,期刊:Applied Physics Letters, 页码:222109-222109 , 文章类型: Article,,卷期:2010年97-22]
- We investigated copper oxides for use as an active layer of p-channel field-effect thin-film transistors (TFTs). Cu2O thin films deposited at room temperature using rf magnetron sputtering were transformed to a CuO phase...
- Room temperature single-electron memory and light sensor with three-dimensionally positioned InAs quantum dots
[作者:Gopfert, S; Worschech, L; Lingemann, S; Schneider, C; Press, D; Hofling, S; Forchel, A,期刊:Applied Physics Letters, 页码:222112-222112 , 文章类型: Article,,卷期:2010年97-22]
- The authors report on the fabrication and characterization of single-electron memories based on site-controlled InAs quantum dots (QDs) embedded in a GaAs/AlGaAs quantum-wire transistor. By using a hole structure templat...
- p-n junctions on Ga-face GaN grown by NH3 molecular beam epitaxy with low ideality factors and low reverse currents
[作者:Hurni, CA; Bierwagen, O; Lang, JR; McSkimming, BM; Gallinat, CS; Young, EC; Browne, DA; Mishra, UK; Speck, JS,期刊:Applied Physics Letters, 页码:222113-222113 , 文章类型: Article,,卷期:2010年97-22]
- A comprehensive analysis of forward and reverse current of Ga-face GaN p-n junctions grown by NH3 molecular beam epitaxy (NH3-MBE) on metal organic chemical vapor deposition (MOCVD) GaN: Fe on sapphire is presented. NH3-...
- Anomalous Hall mobility kink observed in Mg-doped InN: Demonstration of p-type conduction
[作者:Ma, N; Wang, XQ; Xu, FJ; Tang, N; Shen, B; Ishitani, Y; Yoshikawa, A,期刊:Applied Physics Letters, 页码:222114-222114 , 文章类型: Article,,卷期:2010年97-22]
- The p-type conduction in Mg-doped InN film is identified by an anomalous Hall mobility kink observed at similar to 600 K in temperature-dependent Hall-effect measurements. The good agreement between experimental results ...
- Enhancing the electron mobility via delta-doping in SrTiO3
[作者:Kozuka, Y; Kim, M; Ohta, H; Hikita, Y; Bell, C; Hwang, HY,期刊:Applied Physics Letters, 页码:222115-222115 , 文章类型: Article,,卷期:2010年97-22]
- We fabricated high-mobility delta-doped structures in SrTiO3 thin films in order to investigate the low temperature electronic transport properties of confined carriers in this system. An enhancement of the electron mobi...
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