- Resistance switching at the interface of LaAlO3/SrTiO3
[作者:Chen, YZ; Zhao, JL; Sun, JR; Pryds, N; Shen, BG,期刊:Applied Physics Letters, 页码:123102-123102 , 文章类型: Article,,卷期:2010年97-12]
- At the interface of LaAlO3/SrTiO3 with film thickness of 3 unit cells or greater, a reproducible electric-field-induced bipolar resistance switching of the interfacial conduction is observed on nanometer scale by a biase...
- A theoretical framework to obtain interface's shapes during the high-temperature annealing of high-aspect-ratio gratings
[作者:Castez, MF; Salvarezza, RC; Nakamura, J; Sudoh, K,期刊:Applied Physics Letters, 页码:123104-123104 , 文章类型: Article,,卷期:2010年97-12]
- High-temperature annealing applied to solid samples produces important morphological modifications on their surfaces, particularly in high-aspect-ratio gratings. We show, how by means of a framework based in a nonlinear ...
- CdSe quantum dot-sensitized solar cell employing TiO2 nanotube working-electrode and Cu2S counter-electrode
[作者:Shen, Q; Yamada, A; Tamura, S; Toyoda, T,期刊:Applied Physics Letters, 页码:123107-123107 , 文章类型: Article,,卷期:2010年97-12]
- We proposed a CdSe quantum dot (QD)-sensitized solar cell (QDSSC), which is constructed with a CdSe QD adsorbed TiO2 nanotube working electrode on a Ti substrate, a ring shaped Cu2S counter electrode, prepared on a brass...
- Interrelation of transport and optical properties in gold nanoclusters
[作者:Shu, GW; Chen, TY; Shen, JL; Lin, CAJ; Chang, WH; Chan, WH; Wang, HH; Yeh, HI; Chou, WC,期刊:Applied Physics Letters, 页码:123108-123108 , 文章类型: Article,,卷期:2010年97-12]
- Temperature dependence of the electrical conductivity and photoluminescence (PL) in Au nanoclusters (NCs) is investigated. The correlation of the conductivity and PL in Au NCs at different temperatures is evident: (i) fo...
- Frequency dependence of organic magnetoresistance
[作者:Wagemans, W; Janssen, P; van der Heijden, EHM; Kemerink, M; Koopmans, B,期刊:Applied Physics Letters, 页码:123301-123301 , 文章类型: Article,,卷期:2010年97-12]
- To identify the microscopic mechanisms of organic magnetoresistance (OMAR), the dependency on the frequency of the applied magnetic field is explored, which consists of a dc and ac component. The measured magnetoconducta...
- Effect of the gate electrode on the response of organic electrochemical transistors
[作者:Tarabella, G; Santato, C; Yang, SY; Iannotta, S; Malliaras, GG; Cicoira, F,期刊:Applied Physics Letters, 页码:123304-123304 , 文章类型: Article,,卷期:2010年97-12]
- Organic electrochemical transistors (OECTs) are attracting a great deal of interest for biosensing and bioelectronics applications. However, their device physics is not yet well-understood. In this paper, we focus on the...
- Remote doping of a pentacene transistor: Control of charge transfer by molecular-level engineering
[作者:Zhao, W; Qi, YB; Sajoto, T; Barlow, S; Marder, SR; Kahn, A,期刊:Applied Physics Letters, 页码:123305-123305 , 文章类型: Article,,卷期:2010年97-12]
- We demonstrate that holes from a p-doped N,N-'-diphenyl-N,N-'-bis(1-naphthyl)-1,1(')-biphenyl-4,4(')-diamine (alpha-NPD) layer transfer to an adjacent pentacene film. The spatial separation of carriers from dopants, or r...
- Microwave annealing of polymer solar cells with various transparent anode materials
[作者:Flugge, H; Schmidt, H; Riedl, T; Schmale, S; Rabe, T; Fahlbusch, J; Danilov, M; Spieker, H; Schobel, J; Kowalsky, W,期刊:Applied Physics Letters, 页码:123306-123306 , 文章类型: Article,,卷期:2010年97-12]
- Efficient organic solar cells were produced through annealing with microwave radiation (2.45 GHz) within only 8 s. Efficiencies of up to 3% were obtained, similar to those of devices annealed with a hot plate for 300 s. ...
- Impact of stress-memorization technique induced-tensile strain on low frequency noise in n-channel metal-oxide-semiconductor transistors
[作者:Kuo, CW; Wu, SL; Chang, SJ; Huang, YT; Cheng, YC; Cheng, O,期刊:Applied Physics Letters, 页码:123501-123501 , 文章类型: Article,,卷期:2010年97-12]
- The use of low-frequency (1/f) noise to evaluate stress-memorization technique (SMT) induced-stress in n-channel metal-oxide-semiconductor field-effect transistors is investigated. Through observing Hooge's parameter alp...
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