- Silicon on insulator nanoscale backside interconnects for atomic and molecular scale circuits
[作者:Lwin, MHT; Tun, TN; Kim, HH; Kajen, RS; Chandrasekhar, N; Joachim, C,期刊:Journal Of Vacuum Science & Technology B, 页码:978-984 , 文章类型: Article,,卷期:2010年28-5]
- In a planar configuration, multiple electrical connections to a single molecule require an atomic scale precision of the wiring and an atomically flat supporting surface. Current nanofabrication techniques cannot achieve...
- Wafer-scale epitaxial graphene growth on the Si-face of hexagonal SiC (0001) for high frequency transistors
[作者:Dimitrakopoulos, C; Lin, YM; Grill, A; Farmer, DB; Freitag, M; Sun, YN; Han, SJ; Chen, ZH; Jenkins, KA; Zhu, Y; Liu, ZH; McArdle, TJ; Ott, JA; Wisnieff, R; Avouris, P,期刊:Journal Of Vacuum Science & Technology B, 页码:985-992 , 文章类型: Article,,卷期:2010年28-5]
- Up to two layers of epitaxial graphene have been grown on the Si-face of 2 in. SiC wafers exhibiting room-temperature Hall mobilities up to 2750 cm(2) V-1 s(-1), measured from ungated, large, 160x200 mu m(2) Hall bars, a...
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