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文章名     作者     期刊名     摘要     卷     期         如果没有找到您所需要的文献，请点击 ——此处申请     共98条记录   Erbium diffusion in silicon dioxide [作者：Lu, YW; Julsgaard, B; Petersen, MC; Jensen, RVS; Pedersen, TG; Pedersen, K; Larsen, AN,期刊：Applied Physics Letters, 页码：141903-141903 , 文章类型： Article，,卷期：2010年97-14] Erbium diffusion in silicon dioxide layers prepared by magnetron sputtering, chemical vapor deposition, and thermal growth has been investigated by secondary ion mass spectrometry, and diffusion coefficients have been ex... Stress-induced Sn Nanowires from Si-Sn Nanocomposite Coatings [作者：Xiao, X; Sachdev, AK; Haddad, D; Li, Y; Sheldon, BW; Soni, SK,期刊：Applied Physics Letters, 页码：141904-141904 , 文章类型： Article，,卷期：2010年97-14] The growth of stress-induced tin (Sn) whiskers has been considered responsible for the failure of many electronic devices and many approaches have been developed to mitigate their growth. In this report, however, we desc... Effect of the highest occupied molecular orbital energy level offset on organic heterojunction photovoltaic cells [作者：Zhang, ML; Wang, H; Tang, CW,期刊：Applied Physics Letters, 页码：143503-143503 , 文章类型： Article，,卷期：2010年97-14] The effect of the highest occupied molecular orbital energy level offset, Delta E-HOMO, on organic photovoltaic cells has been investigated using a set of donor/C-60 heterojunction structures with Delta E-HOMO up to 1.1 ... A TiAl2O5 nanocrystal charge trap memory device [作者：Zhou, Y; Yin, JA; Xu, HN; Xia, YD; Liu, ZG; Li, AD; Gong, YP; Pu, L; Yan, F; Shi, Y,期刊：Applied Physics Letters, 页码：143504-143504 , 文章类型： Article，,卷期：2010年97-14] A charge trapping memory device using Ti0.2Al0.8Ox film as charge trapping layer and amorphous Al2O3 as the tunneling and blocking layers was fabricated for nonvolatile memory application. TiAl2O5 nanocrystals are precip... Switching and defect dynamics in multistable liquid crystal devices [作者：Tiribocchi, A; Gonnella, G; Marenduzzo, D; Orlandini, E,期刊：Applied Physics Letters, 页码：143505-143505 , 文章类型： Article，,卷期：2010年97-14] We investigate the switching dynamics of multistable nematic liquid crystal devices. In particular, we identify a remarkably simple two-dimensional device which exploits hybrid alignment at the surfaces to yield a bistab... Monocliniclike local atomic structure in amorphous ZrO2 thin film [作者：Cho, DY; Jung, HS; Kim, JH; Hwang, CS,期刊：Applied Physics Letters, 页码：141905-141905 , 文章类型： Article，,卷期：2010年97-14] The local atomic structure and electronic structure of amorphous ZrO2 (a-ZrO2) thin film were examined using the Zr K- and O K- edge x-ray absorption spectroscopy and x-ray photoelectron spectroscopy. It was found that a... Strain-doping coupling dynamics in phosphorus doped Si:C formed by solid phase epitaxial regrowth [作者：Woon, WY; Wang, SH; Chuang, YT; Chuang, MC; Chen, CL,期刊：Applied Physics Letters, 页码：141906-141906 , 文章类型： Article，,卷期：2010年97-14] We investigate the solid phase epitaxial regrowth (SPER) dynamics of phosphorus doped Si: C by time resolved reflectivity and high resolution x-ray diffraction. The effect of SPER kinetics on strain profile and dopant ac... AIN thin films grown on epitaxial 3C-SiC (100) for piezoelectric resonant devices [作者：Lin, CM; Lien, WC; Felmetsger, VV; Hopcroft, MA; Senesky, DG; Pisano, AP,期刊：Applied Physics Letters, 页码：141907-141907 , 文章类型： Article，,卷期：2010年97-14] Highly c-axis oriented heteroepitaxial aluminum nitride (AlN) films were grown on epitaxial cubic silicon carbide (3C-SiC) layers on Si (100) substrates using alternating current reactive magnetron sputtering at temperat... Analysis of the physical processes responsible for the degradation of deep-ultraviolet light emitting diodes [作者：Meneghini, M; Barbisan, D; Rodighiero, L; Meneghesso, G; Zanoni, E,期刊：Applied Physics Letters, 页码：143506-143506 , 文章类型： Article，,卷期：2010年97-14] This paper reports an extensive analysis of the degradation of deep-ultraviolet light-emitting diodes submitted to dc stress test. The study was carried out by means of combined electrical and optical characterization te... Formation of iridium nanocrystals with highly thermal stability for the applications of nonvolatile memory device with excellent trapping ability [作者：Wang, TTJ; Chu, CL; Hsieh, IJ; Tseng, WS,期刊：Applied Physics Letters, 页码：143507-143507 , 文章类型： Article，,卷期：2010年97-14] This paper presents the formation of iridium nanocrystals (Ir-NCs) embedded in SiO2 matrix and it can be used for potential applications of nonvolatile memory devices. The NC formation is investigated by varying Ir film ... Acoustics at nanoscale: Raman-Brillouin scattering from thin silicon-on-insulator layers [作者：Lou, N; Groenen, J; Benassayag, G; Zwick, A,期刊：Applied Physics Letters, 页码：141908-141908 , 文章类型： Article，,卷期：2010年97-14] We report on Raman-Brillouin scattering from thin single silicon layers. Starting from a 33 nm silicon-on-insulator structure, a series of layers with progressively decreasing thicknesses was prepared using a chemical tr... Do surfaces with mixed hydrophilic and hydrophobic areas enhance pool boiling? [作者：Betz, AR; Xu, J; Qiu, HH; Attinger, D,期刊：Applied Physics Letters, 页码：141909-141909 , 文章类型： Article，,卷期：2010年97-14] We demonstrate that smooth and flat surfaces combining hydrophilic and hydrophobic patterns improve pool boiling performance. Compared to a hydrophilic surface with 7 degrees wetting angle, the measured critical heat flu... Ultrafast carrier dynamics in pristine and FeCl3-intercalated bilayer graphene [作者：Zou, XQ; Zhan, D; Fan, XF; Lee, D; Nair, SK; Sun, L; Ni, ZH; Luo, ZQ; Liu, L; Yu, T; Shen, ZX; Chia, EEM,期刊：Applied Physics Letters, 页码：141910-141910 , 文章类型： Article，,卷期：2010年97-14] Ultrafast carrier dynamics of pristine bilayer graphene (BLG) and BLG intercalated with FeCl3 (FeCl3-G), were studied using time-resolved transient differential reflection (Delta R/R). Compared to BLG, the FeCl3-G data s... Nonlinear structural surface intensity: An application of contact acoustic nonlinearity to power flow based damage detection [作者：Semperlotti, F; Conlon, SC,期刊：Applied Physics Letters, 页码：141911-141911 , 文章类型： Article，,卷期：2010年97-14] The concept of structural surface intensity is extended to the nonlinear domain introducing a physical quantity denominated nonlinear structural surface intensity (NSSI). This quantity is formulated for mechanical system... Anomalous Raman features of silicon nanowires under high pressure [作者：Bhattacharyya, S; Churochkin, D; Erasmus, RM,期刊：Applied Physics Letters, 页码：141912-141912 , 文章类型： Article，,卷期：2010年97-14] The potential of silicon nanowires (SiNWs), (diameter<10nm) to transform into rigid bundlelike structures with distinct phonon confinement under high pressure (<= 15GPa), instead of amorphizing as per previous reports, i... Thermally evaporated Cu2ZnSnS4 solar cells [作者：Wang, K; Gunawan, O; Todorov, T; Shin, B; Chey, SJ; Bojarczuk, NA; Mitzi, D; Guha, S,期刊：Applied Physics Letters, 页码：143508-143508 , 文章类型： Article，,卷期：2010年97-14] High efficiency Cu2ZnSnS4 solar cells have been fabricated on glass substrates by thermal evaporation of Cu, Zn, Sn, and S. Solar cells with up to 6.8% efficiency were obtained with absorber layer thicknesses less than 1...