- Lithographic performance evaluation of a contaminated extreme ultraviolet mask after cleaning
[作者:George, S; Naulleau, P; Okoroanyanwu, U; Dittmar, K; Holfeld, C; Wuest, A,期刊:Journal Of Vacuum Science & Technology B, 页码:841-848 , 文章类型: Article,,卷期:2010年28-4]
- The effect of surface contamination and subsequent mask surface cleaning on the lithographic performance of an extreme ultraviolet (EUV) mask is investigated. SEMATECH's Berkeley microfield exposure tool printed 40 and 5...
- Simulations of radical and ion fluxes on a wafer in a Cl-2/Ar inductively coupled plasma discharge: Confrontation with GaAs and GaN etch experiments
[作者:Despiau-Pujo, E; Chabert, P; Bansropun, S; Thenot, D; Plouhinec, P; Cassette, S,期刊:Journal Of Vacuum Science & Technology B, 页码:693-701 , 文章类型: Article,,卷期:2010年28-4]
- A two-dimensional fluid model is used to study an industrial Ar/Cl-2 inductively coupled plasma discharge designed to etch III-V samples. The effect of rf power, gas pressure, and chlorine content on the fluxes of reacti...
- InAs nanostructures on InGaAsP/InP(001): Interaction of InAs quantum-dash formation with InGaAsP decomposition
[作者:Genz, F; Lenz, A; Eisele, H; Ivanova, L; Timm, R; Pohl, UW; Dahne, M; Franke, D; Kunzel, H,期刊:Journal Of Vacuum Science & Technology B, 页码:C5E1-C5E7 , 文章类型: Proceedings Paper,,卷期:2010年28-4]
- Cross-sectional scanning tunneling microscopy is used to study the spatial structure and composition of self-assembled InAs nanostructures grown on InGaAsP lattice matched to the InP substrate. Images of the (110) and ((...
- Atomic structure and strain of the InAs wetting layer growing on GaAs(001)-c(4 X 4)
[作者:Prohl, C; Hopfner, B; Grabowski, J; Dahne, M; Eisele, H,期刊:Journal Of Vacuum Science & Technology B, 页码:C5E13-C5E21 , 文章类型: Proceedings Paper,,卷期:2010年28-4]
- Using scanning tunneling microscopy, the authors studied the wetting layer evolution of InAs on GaAs(001)-c(4 X 4) and unraveled the different surface reconstructions during this process. At low coverages the deposited I...
- Vibrational spectra of quantum dots formed by Langmuir-Blodgett technique
[作者:Milekhin, A; Sveshnikova, L; Duda, T; Surovtsev, N; Adichtchev, S; Ding, L; Zahn, DRT,期刊:Journal Of Vacuum Science & Technology B, 页码:C5E22-C5E24 , 文章类型: Proceedings Paper,,卷期:2010年28-4]
- Phonon spectra of CdS, ZnS, PbS, CuS, Ag2S, and ZnO quantum dots formed by using the Langmuir-Blodgett technology are investigated by Raman and infrared spectroscopies. The Raman spectra of structures show peaks correspo...
- Real-time monitoring of the evolving morphology and molecular structure at an organic-inorganic semiconductor interface: SnPc on GaAs(001)
[作者:Evans, DA; Vearey-Roberts, AR; Roberts, OR; Brieva, AC; Bushell, A; Williams, GT; Langstaff, DP; Cabailh, G; McGovern, IT,期刊:Journal Of Vacuum Science & Technology B, 页码:C5F5-C5F11 , 文章类型: Proceedings Paper,,卷期:2010年28-4]
- An organic-III-V hybrid semiconductor interface has been studied using real-time photoelectron spectroscopy and x-ray absorption spectroscopy to reveal the evolving morphology and molecular structure within the organic l...
- Mobility saturation in tapered edge bottom contact copper phthalocyanine thin film transistors
[作者:Royer, JE; Park, J; Colesniuc, C; Lee, JS; Gredig, T; Lee, S; Jin, S; Schuller, IK; Trogler, WC; Kummel, AC,期刊:Journal Of Vacuum Science & Technology B, 页码:C5F22-C5F27 , 文章类型: Proceedings Paper,,卷期:2010年28-4]
- Copper phthalocyanine (CuPc) thin film transistors were fabricated using a tapered edge bottom contact device geometry, and mobility saturation was observed for devices with CuPc thicknesses of 12 monolayers (MLs) and gr...
- Nanoscale electrical characterization of arrowhead defects in GaInP thin films grown on Ge
[作者:Beinik, I; Galiana, B; Kratzer, M; Teichert, C; Rey-Stolle, I; Algora, C; Tejedor, P,期刊:Journal Of Vacuum Science & Technology B, 页码:C5G5-C5G10 , 文章类型: Proceedings Paper,,卷期:2010年28-4]
- In this work the authors present an electrical characterization of the so called arrowhead defects (ADs) in GaInP thin films grown on Ge(100) substrates misoriented by 6 degrees toward (111). The samples have been evalua...
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