- Short wavelength band edge thermometry during molecular beam epitaxial growth of GaN on SiC substrates and detected adatom self-heating effects
[作者:Hoke, WE; Barlett, D; Kennedy, TD; Wissman, B; Mosca, JJ,期刊:Journal Of Vacuum Science & Technology B, 页码:648-648 , 文章类型: Proceedings Paper,,卷期:2010年28-3]
- Band edge thermometry was used to measure the temperature of 4H SiC substrates, band gap of 3.25 eV, during heat-up followed by molecular beam epitaxial growth of GaN structures. The surface of the rotating wafer was ill...
- Wide-dynamic-range, fast-response CBr4 doping system for molecular beam epitaxy
[作者:Chang, YC; Zheng, Y; English, JH; Jackson, AW; Coldren, LA,期刊:Journal Of Vacuum Science & Technology B, 页码:648-648 , 文章类型: Proceedings Paper,,卷期:2010年28-3]
- The authors report the design and performance of a versatile carbon doping system for solid-source molecular beam epitaxy using carbon tetrabromide (CBr4). This system is capable to achieve three orders of magnitude in d...
- Investigation of multistack InAs/InGaAs/GaAs self-assembled quantum dots-in-double-well structures for infrared detectors
[作者:Sharma, YD; Kutty, MN; Shenoi, RV; Barve, AV; Myers, S; Shao, J; Plis, E; Lee, S; Noh, S; Krishna, S,期刊:Journal Of Vacuum Science & Technology B, 页码:648-648 , 文章类型: Proceedings Paper,,卷期:2010年28-3]
- The authors report the InAs/InGaAs/GaAs/AlGaAs quantum dots-in-double-well (D-DWELL) design, which has a lower strain per DWELL stack than the InAs/InGaAs/GaAs DWELLs thereby enabling the growth of many more stacks in th...
- Molecular beam epitaxial growth effects on type-II antimonide lasers and photodiodes
[作者:Canedy, CL; Abell, J; Bewley, WW; Aifer, EH; Kim, CS; Nolde, JA; Kim, M; Tischler, JG; Lindle, JR; Jackson, EM; Vurgaftman, I; Meyer, JR,期刊:Journal Of Vacuum Science & Technology B, 页码:648-648 , 文章类型: Proceedings Paper,,卷期:2010年28-3]
- Two important classes of electro-optical devices, midwave-infrared interband cascade lasers (ICLs) and long-wave infrared photodiodes, employ type-II antimonide active regions grown by molecular beam epitaxy (MBE). The a...
- Molecular beam epitaxy growth and characterization of type-II InAs/GaSb strained layer superlattices for long-wave infrared detection
[作者:Plis, E; Khoshakhlagh, A; Myers, S; Kim, HS; Gautam, N; Sharma, YD; Krishna, S; Lee, SJ; Noh, SK,期刊:Journal Of Vacuum Science & Technology B, 页码:648-648 , 文章类型: Proceedings Paper,,卷期:2010年28-3]
- The authors report on investigation of type-II InAs/GaSb and InAs/InxGa1-xSb strained layer superlattices (SLSs) for long-wave infrared detection. Growth conditions were optimized to obtain nearly lattice matched (Delta ...
- Intersubband optoelectronics in the InGaAs/GaAsSb material system
[作者:Detz, H; Andrews, AM; Nobile, M; Klang, P; Mujagic, E; Hesser, G; Schrenk, W; Schaffler, F; Strasser, G,期刊:Journal Of Vacuum Science & Technology B, 页码:648-648 , 文章类型: Proceedings Paper,,卷期:2010年28-3]
- In this article the authors report on a novel material system for optoelectronic intersubband devices. Superlattices of In0.53Ga0.47As/GaAs0.51Sb0.49 were grown by molecular beam epitaxy. Layer thickness and quality was ...
- Growth of Znx,Cd(1-x ')Se/ZnxCdyMg(1-x-y)Se-InP quantum cascade structures for emission in the 3-5 mu m range
[作者:Charles, WO; Yao, Y; Franz, KJ; Zhang, Q; Shen, A; Gmachl, C; Tamargo, MC,期刊:Journal Of Vacuum Science & Technology B, 页码:648-648 , 文章类型: Proceedings Paper,,卷期:2010年28-3]
- The molecular beam epitaxial growth and electroluminescence (EL) properties of Zn0.48Cd0.52Se/Zn0.24Cd0.18Mg0.58Se quantum cascade (QC) structures are reported. The samples were composed of 30 repeats of a three-well act...
- Transition mechanism of InAs/GaAs quantum-dot infrared photodetectors with different InAs coverages
[作者:Tseng, CC; Chung, TH; Mai, SC; Chao, KP; Lin, WH; Lin, SY; Wu, MC,期刊:Journal Of Vacuum Science & Technology B, 页码:648-648 , 文章类型: Proceedings Paper,,卷期:2010年28-3]
- In this article, the authors investigate the influences of different InAs coverages on the photoluminescence excitation (PLE) spectra and spectral responses of InAs/GaAs quantum-dot infrared photodetectors (QDIPs). An in...
- Concept of feedback-free high-frequency loss modulation in detuned duo-cavity vertical cavity surface-emitting laser
[作者:Yakimov, M; van Eisden, J; Tokranov, V; Varanasi, M; Oktyabrsky, SR; Mohammed, EM; Young, IA,期刊:Journal Of Vacuum Science & Technology B, 页码:648-648 , 文章类型: Proceedings Paper,,卷期:2010年28-3]
- The authors propose and demonstrate a novel concept for ultrahigh-speed loss modulation of a vertical cavity surface-emitting laser (VCSEL). A duo-cavity device architecture is used to optically decouple the ac feedback ...
- Molecular beam epitaxial growth and properties of GaAs pseudomorphic high electron mobility transistors on silicon composite substrates
[作者:Hoke, WE; Kennedy, TD; LaRoche, JR; Torabi, A; Bettencourt, JP; Saledas, P; Lee, CD; Lyman, PS; Kazior, TE; Bulsara, MT; Fitzgerald, EA; Lubyshev, D; Liu, WK,期刊:Journal Of Vacuum Science & Technology B, 页码:648-648 , 文章类型: Proceedings Paper,,卷期:2010年28-3]
- GaAs pseudomorphic high electron mobility transistor (PHEMT) structures were grown by molecular beam epitaxy on germanium substrates and composite silicon template wafers incorporating silicon and germanium transferred l...
- Mobility and remote scattering in buried InGaAs quantum well channels with high-k gate oxide
[作者:Nagaiah, P; Tokranov, V; Yakimov, M; Koveshnikov, S; Oktyabrsky, S; Veksler, D; Tsai, W; Bersuker, G,期刊:Journal Of Vacuum Science & Technology B, 页码:648-648 , 文章类型: Proceedings Paper,,卷期:2010年28-3]
- The authors present results on the Hall electron mobility in buried In0.77Ga0.23As quantum well channels influenced by remote scattering due to In0.53Ga0.47As/HfO2 interface. When the top In0.53Ga0.47As/InAlAs barrier th...
- Molecular beam epitaxy growth and characterization of self-assembled MnAs wires on highly oriented pyrolytic graphite
[作者:Hegde, S; Fraser, E; Kwon, J; Luo, H,期刊:Journal Of Vacuum Science & Technology B, 页码:648-648 , 文章类型: Proceedings Paper,,卷期:2010年28-3]
- The authors have grown MnAs on highly oriented pyrolytic graphite (HOPG), a strain-free and inert substrate, using molecular beam epitaxy. MnAs on HOPG grows in the form of particles, which self-assemble to form wirelike...
- Open source scanning probe microscopy control software package GXSM
[作者:Zahl, P; Wagner, T; Moller, R; Klust, A,期刊:Journal Of Vacuum Science & Technology B, 页码:648-648 , 文章类型: Article,,卷期:2010年28-3]
- GXSM is a full featured and modern scanning probe microscopy (SPM) software. It can be used for powerful multidimensional image/data processing, analysis, and visualization. Connected to an instrument, it is operating ma...
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