- 2/3 in. ultrahigh-sensitivity image sensor with active-matrix high-efficiency electron emission device
[作者:Nakada, T; Sato, T; Matsuba, Y; Sakemura, K; Okuda, Y; Negishi, N; Watanabe, A; Yoshikawa, T; Ogasawara, K; Nanba, M; Tanioka, K; Egami, N; Kobayashi, A; Koshida, N,期刊:Journal Of Vacuum Science & Technology B, 页码:C2D11-C2D14 , 文章类型: Proceedings Paper,,卷期:2010年28-2]
- A 640x480 pixel image sensor has been developed for low light imaging with a practical resolution. This image sensor combined an active-matrix high-efficiency electron emission device (HEED) with a high-gain avalanche ru...
- Double-gate-driving field emission display panel with stacked-metalized-aperture structure
[作者:Luo, J; Chen, J; Deng, SZ; Zhang, Y; Xu, NS,期刊:Journal Of Vacuum Science & Technology B, 页码:C2D15-C2D21 , 文章类型: Proceedings Paper,,卷期:2010年28-2]
- To utilize high-performance nanoemitter cold cathode prepared by high-temperature direct-growth process, 4.5 in. field emission display based on double-gate driving principle has been fabricated. A stacked-metalized-aper...
- Development of a CdTe x-ray imaging device driven by a vertical thin film field emission array
[作者:Tsunekawa, Y; Nakagawa, M; Morii, H; Nagao, M; Yoshida, T; Kanemaru, S; Neo, Y; Aoki, T; Mimura, H,期刊:Journal Of Vacuum Science & Technology B, 页码:C2D22-C2D25 , 文章类型: Proceedings Paper,,卷期:2010年28-2]
- The authors describe a novel CdTe x-ray imaging device that is driven by an electron beam from a field-emitter array. This CdTe x-ray imaging device comprises a CdTe Schottky diode with a vertical thin-film field-emitter...
- Configuration-dependent enhancements of electric fields near the quadruple and the triple junction
[作者:Chung, MS; Yoon, BG; Cutler, PH; Miskovsky, NM; Weiss, BL; Mayer, A,期刊:Journal Of Vacuum Science & Technology B, 页码:C2A94-C2A97 , 文章类型: Proceedings Paper,,卷期:2010年28-2]
- The authors investigated the behavior of an electric field near a junction composed of metal, dielectric, and vacuum. By using the two-dimensional model of the junction, the authors calculated the electric field near the...
- Electron field emission from the Si nanostructures formed by laser irradiation
[作者:Evtukh, A; Medvid, A; Onufrijevs, P; Okada, M; Mimura, H,期刊:Journal Of Vacuum Science & Technology B, 页码:C2B11-C2B13 , 文章类型: Proceedings Paper,,卷期:2010年28-2]
- The technology of nanostructure formation by laser radiation on Si surface for the electron field emitter is proposed. n-type Si wafers are used in the experiments. The nanometer size, conelike nanostructures with nanosp...
- Development of in situ analyzer of field-emission devices
[作者:Kawasaki, M; He, Z; Gotoh, Y; Tsuji, H; Ishikawa, J,期刊:Journal Of Vacuum Science & Technology B, 页码:C2A77-C2A82 , 文章类型: Proceedings Paper,,卷期:2010年28-2]
- The authors are developing an in situ analyzer of field-emission devices that is based on the Seppen-Katamuki (SK) analysis, and they report preliminary results as proof of concept. One of the major differences in the pr...
- Model for trap-assisted electron tunneling in thin insulators
[作者:Filip, V; Liu, J; Wong, CK; Wong, H; Nicolaescu, D; Barna, V; Barna, ES,期刊:Journal Of Vacuum Science & Technology B, 页码:C2A58-C2A63 , 文章类型: Proceedings Paper,,卷期:2010年28-2]
- The trap-assisted electron tunneling in thin insulators has been modeled to explain the apparition of plateaus in the current-voltage characteristics of some existing experimental data. As a consequence of the electron t...
- Peculiarities of the photon-assisted field emissions from GaN nanorods
[作者:Evtukh, A; Yilmazoglu, O; Litovchenko, V; Semenenko, M; Kyriienko, O; Hartnagel, HL; Pavlidis, D,期刊:Journal Of Vacuum Science & Technology B, 页码:C2A72-C2A76 , 文章类型: Proceedings Paper,,卷期:2010年28-2]
- The peculiarities of electron field and photon-assisted field emission from GaN nanorods are presented here. Well-aligned GaN field-emitter rods with nanometer-scale diameter were processed on a wafer with n(+)-GaN top a...
- Experimental evaluation of the influence of shank shape of field ion emitter on the angular current density
[作者:Kobayashi, Y; Sugiyama, Y; Morikawa, Y; Kajiwara, K; Hata, K,期刊:Journal Of Vacuum Science & Technology B, 页码:C2A90-C2A93 , 文章类型: Proceedings Paper,,卷期:2010年28-2]
- An adequate emitter shape for a gas field ion source was investigated to obtain a higher angular current density, dI/d. Single-crystalline << 111 >>-oriented tungsten emitters having a similar tip radius of curvature and...
- Fabrication of spin-polarized electron emitter with single << 110 >>-oriented magnetite whisker
[作者:Okada, M; Neo, Y; Mimura, H; Nagai, S; Hata, K,期刊:Journal Of Vacuum Science & Technology B, 页码:C2C26-C2C30 , 文章类型: Proceedings Paper,,卷期:2010年28-2]
- Magnetite (Fe3O4) is oxidative resistant and has a half metallic property and is expected to have spintronic applications. In this work, << 110 >>-oriented single crystal magnetite whiskers, 30-300 nm in diameter, were s...
- Efficient high-current field emission from arrays of carbon nanotube columns
[作者:Navitski, A; Muller, G; Sakharuk, V; Prudnikava, AL; Shulitski, BG; Labunov, VA,期刊:Journal Of Vacuum Science & Technology B, 页码:C2B14-C2B19 , 文章类型: Proceedings Paper,,卷期:2010年28-2]
- Arrays of entangled carbon nanotube (CNT) columns on patterned n-Si substrates were fabricated by an atmospheric chemical vapor deposition with a ferrocene/xylene mixture. Preferential CNT growth in the opened Si windows...
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