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文章名     作者     期刊名     摘要     卷     期         如果没有找到您所需要的文献，请点击 ——此处申请     共69条记录   Review of electrical characterization of ultra-shallow junctions with micro four-point probes [作者：Petersen, DH; Hansen, O; Hansen, TM; Boggild, P; Lin, R; Kjaer, D; Nielsen, PF; Clarysse, T; Vandervorst, W; Rosseel, E; Bennett, NS; Cowern, NEB,期刊：Journal Of Vacuum Science & Technology B, 页码：C1C27-C1C33 , 文章类型： Article，,卷期：2010年28-1] Electrical characterization of ultra-shallow junctions, relying on advanced implant and anneal processes, has received much attention in the past few years since conventional characterization methods fail. With continued... Dopant measurements in semiconductors with atom probe tomography [作者：Ronsheim, PA; Hatzistergos, M; Jin, S,期刊：Journal Of Vacuum Science & Technology B, 页码：C1E1-C1E4 , 文章类型： Article，,卷期：2010年28-1] The capability of atom probe tomography to make useful measurements of dopant distribution single device geometry is explored by characterizing the compositional accuracy of reconstructed data sets. The objective of this... Nanoindentation study of thin plasma enhanced chemical vapor deposition SiCOH low-k films modified in He/H-2 downstream plasma [作者：Vanstreels, K; Urbanowicz, AM,期刊：Journal Of Vacuum Science & Technology B, 页码：173-179 , 文章类型： Article，,卷期：2010年28-1] The effect of He/H-2 downstream plasma (DSP) on the mechanical properties of plasma enhanced chemical vapor deposition SiCOH low-k films was studied using nanoindentation (NI) with the continuous-stiffness measurement te... Four beams surface plasmon interference nanoscale lithography for patterning of two-dimensional periodic features [作者：Sreekanth, KV; Murukeshan, VM,期刊：Journal Of Vacuum Science & Technology B, 页码：128-130 , 文章类型： Article，,卷期：2010年28-1] The interference of multiple counterpropagating surface plasmon waves as a lithography technique to pattern periodic two-dimensional features is proposed and illustrated in this article. The surface plasmons are generate... Ultrahigh selective etching of Si3N4 films over SiO2 films for silicon nitride gate spacer etching [作者：Lee, S; Oh, J; Lee, K; Sohn, H,期刊：Journal Of Vacuum Science & Technology B, 页码：131-137 , 文章类型： Article，,卷期：2010年28-1] The process window for the high etching selectivity of silicon nitride to silicon oxide was investigated in CF4/CH4 inductively coupled plasma. This work showed that the etching selectivity could be controlled by modulat... Room-temperature capillary-imprint lithography for making micro-/nanostructures in large areas [作者：Ye, XD; Ding, YC; Duan, YG; Liu, HZ; Lu, BH,期刊：Journal Of Vacuum Science & Technology B, 页码：138-142 , 文章类型： Article，,卷期：2010年28-1] Compared to imprint techniques under the driving condition of external imprint pressure, imprint lithography under capillary force has the advantages of being suitable to produce large feature patterns, simple mold struc... Parameter study for silicon grass formation in Bosch process [作者：Jung, K; Song, W; Lim, HW; Lee, CS,期刊：Journal Of Vacuum Science & Technology B, 页码：143-148 , 文章类型： Article，,卷期：2010年28-1] Bosch process is one type of silicon etching technology for high-aspect ratio where silicon grass is one of the by-products. Previously, most of the studies have been focused on eliminating these silicon grasses. However... Patterning of porous SiOCH using an organic mask: Comparison with a metallic masking strategy [作者：Darnon, M; Chevolleau, T; David, T; Ducote, J; Posseme, N; Bouyssou, R; Bailly, F; Perret, D; Joubert, O,期刊：Journal Of Vacuum Science & Technology B, 页码：149-156 , 文章类型： Article，,卷期：2010年28-1] The etching of sub-100-nm porous dielectric trenches has been investigated using an organic mask. The etching process that is performed in an oxide etcher is composed of three steps: a thin dielectric antireflective coat... GaAs/AlOx micropillar fabrication for small mode volume photon sources [作者：Choi, JM; Silverman, KL; Stevens, MJ; Harvey, TL; Mirin, RP,期刊：Journal Of Vacuum Science & Technology B, 页码：157-162 , 文章类型： Article，,卷期：2010年28-1] Micropillar devices have shown promise as single photon sources for applications in quantum key distribution as well as single photon metrology and fundamental science. For higher temperature operation (77 K), a high qua... Infinite etch selectivity and line edge roughness variation during etching of silicon oxynitride with an extreme ultraviolet resist pattern in dual-frequency CH2F2/H-2/Ar capacitively coupled plasmas [作者：Kwon, BS; Kim, JS; Lee, NE; Lee, SK,期刊：Journal Of Vacuum Science & Technology B, 页码：120-127 , 文章类型： Article，,卷期：2010年28-1] The process window for infinitely high etch selectivity of silicon oxynitride (SiON) layers to extreme ultraviolet (EUV) resist and the variation in line edge roughness (LER) of etched EUV resist were investigated in a C... Advanced in situ pre-Ni silicide (Siconi) cleaning at 65 nm to resolve defects in NiSix modules [作者：Yang, RP; Su, N; Bonfanti, P; Nie, JX; Ning, J; Li, TT,期刊：Journal Of Vacuum Science & Technology B, 页码：56-61 , 文章类型： Article，,卷期：2010年28-1] The existing Ar plasma sputter cleaning and dilute HF dip wet cleaning techniques have drawbacks, including critical dimension change, plasma damage, poor selectivity to oxides, vacuum breakage (causing oxide formation),... Stenciled conducting bismuth nanowires [作者：Savu, V; Neuser, S; Villanueva, G; Vazquez-Mena, O; Sidler, K; Brugger, J,期刊：Journal Of Vacuum Science & Technology B, 页码：169-172 , 文章类型： Proceedings Paper，,卷期：2010年28-1] Stencil lithography is used here for the fabrication of bismuth nanowires using thermal evaporation. This technique provides good electrical contact resistance by having the nanowire structure and the contact pads deposi... Effects of silver deposition on 405 nm light-driven zinc oxide photocatalyst [作者：Seki, S; Sekizawa, T; Haga, K; Sato, T; Takeda, M; Seki, Y; Sawada, Y; Yubuta, K; Shishido, T,期刊：Journal Of Vacuum Science & Technology B, 页码：188-193 , 文章类型： Proceedings Paper，,卷期：2010年28-1] A silver-loaded zinc oxide (Ag/ZnO) photocatalyst was fabricated by chemical deposition, followed by an annealing process using a 405-nm-light-driven ZnO fiber. Silver oxide (Ag2O) was deposited on the ZnO fiber with the... Fabrication of large area ultrathin silicon membrane: Application for high efficiency extreme ultraviolet diffraction gratings [作者：Constancias, C; Dalzotto, B; Michallon, P; Wallace, J; Saib, M,期刊：Journal Of Vacuum Science & Technology B, 页码：194-197 , 文章类型： Proceedings Paper，,卷期：2010年28-1] Silicon membranes of 100 nm thick (and below) over several mm(2) have been fabricated for high efficiency extreme ultraviolet (EUV) transmission grating. The perfect planarity (< 1 nm) and the high transparency (>80%) at... Indium oxide thin film transistors fabricated by low-energetic ion bombardment technique at room temperature [作者：Chu, AK; Hong, TI; Tien, WC,期刊：Journal Of Vacuum Science & Technology B, 页码：211-215 , 文章类型： Article，,卷期：2010年28-1] The authors report on InOx transparent thin-film transistor (TTFT) fabricated by low-energetic ion bombardment technique at room temperature. The InOx TTFTs were prepared using a coplanar bottom gate configuration with i... Scratch properties of nickel thin films using atomic force microscopy [作者：Tseng, AA; Shirakashi, J; Jou, S; Huang, JC; Chen, TP,期刊：Journal Of Vacuum Science & Technology B, 页码：202-210 , 文章类型： Article，,卷期：2010年28-1] Experiments using atomic force microscopy (AFM) as a machining tool for scratching patterns on nickel thin films have been conducted with an emphasis on establishing the material scratchability or more general, the nanos...