- Near infrared long-persistent phosphorescence in SrAl2O4:Eu2+, Dy3+, Er3+ phosphors based on persistent energy transfer
[作者:Yu, NY; Liu, F; Li, XF; Pan, ZW,期刊:Applied Physics Letters, 页码:231110-231110 , 文章类型: Article,,卷期:2009年95-23]
- Eu2+, Dy3+, and Er3+ ions codoped SrAl2O4 phosphors with near infrared (NIR) (t 1530 nm) long-persistent phosphorescence were synthesized by a combustion method. The NIR phosphorescence emission was realized through a pe...
- Terahertz pulsed spectroscopic imaging using optimized binary masks
[作者:Shen, YC; Gan, L; Stringer, M; Burnett, A; Tych, K; Shen, H; Cunningham, JE; Parrott, EPJ; Zeitler, JA; Gladden, LF; Linfield, EH; Davies, AG,期刊:Applied Physics Letters, 页码:231112-231112 , 文章类型: Article,,卷期:2009年95-23]
- We report the development of a terahertz pulsed spectroscopic imaging system based on the concept of compressive sensing. A single-point terahertz detector, together with a set of 40 optimized two-dimensional binary mask...
- Random laser action in dielectric-metal-dielectric surface plasmon waveguides
[作者:Kumar, A; Yu, SF; Li, XF,期刊:Applied Physics Letters, 页码:231114-231114 , 文章类型: Article,,卷期:2009年95-23]
- A dielectric-metal-dielectric (DMD) surface plasmon (SP) waveguide, in which the top and bottom dielectric layers are incorporated with scatters and optical gain, respectively, was realized to support random lasing actio...
- Cavity pressure acceleration: An efficient laser-based method of production of high-velocity macroparticles
[作者:Borodziuk, S; Kasperczuk, A; Pisarczyk, T; Badziak, J; Chodukowski, T; Ullschmied, J; Krousky, E; Masek, K; Pfeifer, M; Rohlena, K; Skala, J; Pisarczyk, P,期刊:Applied Physics Letters, 页码:231501-231501 , 文章类型: Article,,卷期:2009年95-23]
- We propose an efficient method of accelerating macroparticles to high velocities, which employs pressure of the plasma produced by a focused pulsed high-power laser beam inside a cavity-type target. That is why we have c...
- Defect kinetics and dopant activation in submicrosecond laser thermal processes
[作者:Huet, K; Fisicaro, G; Venturini, J; Besaucele, H; La Magna, A,期刊:Applied Physics Letters, 页码:231901-231901 , 文章类型: Article,,卷期:2009年95-23]
- Defect evolution in ion implanted c-Si at the submicrosecond time scales during a laser thermal annealing process is investigated by means of kinetic simulations. Nonmelting, melting, and partial melting regimes are simu...
- High-throughput fabrication of nanoantennae over large areas for biosensing and nanospectroscopy
[作者:Kiristopuryan, A; Ekinci, Y; Giannini, R; Sahoo, PK; Gorodyska, G; Loffler, JF,期刊:Applied Physics Letters, 页码:231903-231903 , 文章类型: Article,,卷期:2009年95-23]
- We report on a simple and high-throughput method for the fabrication of gold and silver nanoparticle dimers with extremely small gaps and extending over large areas, using colloidal lithography and shadow thermal-evapora...
- Improving microstructural quality of semipolar (11(2)under-bar2) GaN on m-plane sapphire by a two-step growth process
[作者:Sun, Q; Leung, B; Yerino, CD; Zhang, Y; Han, J,期刊:Applied Physics Letters, 页码:231904-231904 , 文章类型: Article,,卷期:2009年95-23]
- This letter reports a two-step growth process for improving microstructural quality of semipolar (11 (2) under bar2) GaN on nitridized m-plane sapphire. The two-step growth of (11 (2) under bar2) GaN, islanding growth un...
- The origin and evolution of V-defects in InxAl1-xN epilayers grown by metalorganic chemical vapor deposition
[作者:Miao, ZL; Yu, TJ; Xu, FJ; Song, J; Huang, CC; Wang, XQ; Yang, ZJ; Zhang, GY; Zhang, XP; Yu, DP; Shen, B,期刊:Applied Physics Letters, 页码:231909-231909 , 文章类型: Article,,卷期:2009年95-23]
- Near-lattice-matched and highly compressive-strained InxAl1-xN epilayers were grown on GaN templates by metalorganic chemical vapor deposition. The V-defects associated with screw-component threading dislocations (TDs) w...
- Control of current-jump induced by voltage, temperature, light in p-type GaAs: Programmable critical temperature sensor
[作者:Choi, S; Kim, BJ; Lee, YW; Lim, YS; Choi, J; Kim, HT,期刊:Applied Physics Letters, 页码:231910-231910 , 文章类型: Article,,卷期:2009年95-23]
- For two-terminal devices fabricated by Be (or Mn)-doped p-type epitaxial GaAs thin films, when the Mott metal-insulator transition (MIT) as current jump occurs, we observe that the energy gap of GaAs is not shifted, its ...
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