- Patterning of alkanethiolate self-assembled monolayers by downstream microwave nitrogen plasma: Negative and positive resist behavior
[作者:Weng, CC; Liao, JD; Wu, YT; Tsai, SC; Chen, CH; Zharnikov, M,期刊:Journal Of Vacuum Science & Technology B, 页码:1949-1957 , 文章类型: Article,,卷期:2009年27-4]
- Taking octadecanethiolate self-assembled monolayers (SAMs) adsorbed on Au(111) as a test system, the authors demonstrated patterning of an aliphatic monomolecular resist by downstream microwave nitrogen plasma in proximi...
- Micropatterning of polymeric semiconductor by selective lift-off method using epoxy mold
[作者:Wang, Z; Yu, XH; Xing, RB; Han, YC; Takahara, A,期刊:Journal Of Vacuum Science & Technology B, 页码:1958-1962 , 文章类型: Article,,卷期:2009年27-4]
- A simple and efficient method for patterning polymeric semiconductors for applications in the field of organic electronics is proposed. The entire polymer layer, except for the desired pattern, is selectively lifted off ...
- Resistivity reduction by external oxidation of Cu-Mn alloy films for semiconductor interconnect application
[作者:Iijima, J; Fujii, Y; Neishi, K; Koike, J,期刊:Journal Of Vacuum Science & Technology B, 页码:1963-1968 , 文章类型: Article,,卷期:2009年27-4]
- A self-forming barrier process using Cu-Mn alloy has been reported to exhibit excellent reliability for interconnect lines in advanced semiconductor devices. However, Mn increases resistivity. In this work, the authors i...
- Accumulated sidewall damage in dry etched photonic crystals
[作者:Berrier, A; Shi, Y; Siegert, J; Marcinkevicius, S; He, S; Anand, S,期刊:Journal Of Vacuum Science & Technology B, 页码:1969-1975 , 文章类型: Article,,卷期:2009年27-4]
- Evidence for accumulated damage is provided by investigating the effect of etch duration on the carrier lifetime of an InGaAsP quantum well (QW) inside the InP-based photonic crystal (PhC) structures. It is found that on...
- Synthesis of silicon-containing materials for UV-curable imprint etch barrier solutions
[作者:Song, SS; Kim, SM; Choi, BY; Jung, GY; Lee, H,期刊:Journal Of Vacuum Science & Technology B, 页码:1984-1988 , 文章类型: Article,,卷期:2009年27-4]
- Silicon-containing acrylate and vinyl-ether derivatives, i.e., bis-(acryloxyethyloxy)-dimethylsilane, bis-(acryloxyethyloxy)-bis-(trimethylsilylmethyl)-silane, and bis-(vinyloxyethyloxy)- dimethylsilane, were synthesized...
- Loop formation in graphitic nanoribbon edges using furnace heating or Joule heating
[作者:Jia, XT; Campos-Delgado, J; Gracia-Espino, EE; Hofmann, M; Muramatsu, H; Kim, YA; Hayashi, T; Endo, M; Kong, J; Terrones, M; Dresselhaus, MS,期刊:Journal Of Vacuum Science & Technology B, 页码:1996-2002 , 文章类型: Article,,卷期:2009年27-4]
- Here the authors report the use of either furnace heating or Joule heating to pacify the exposed graphene edges by loop formation in a novel graphitic nanoribbon material, grown by chemical vapor deposition. The edge ene...
- Theory and measurements of room temperature transport in graphene using SiO2 backgate and electrochemical gate
[作者:Shishir, RS; Chen, F; Xia, J; Tao, NJ; Ferry, DK,期刊:Journal Of Vacuum Science & Technology B, 页码:2003-2007 , 文章类型: Article,,卷期:2009年27-4]
- Room temperature transport measurements of a gated graphene monolayer, whose field effect is tuned by an oxide backgate and an electrochemical gate, are presented. The graphene samples are obtained by mechanical exfoliat...
- Surface, bulk, and interface electronic states of epitaxial BiFeO3 films
[作者:Zhang, J; Rutkowski, M; Martin, LW; Conry, T; Ramesh, R; Ihlefeld, JF; Melville, A; Schlom, DG; Brillson, LJ,期刊:Journal Of Vacuum Science & Technology B, 页码:2012-2014 , 文章类型: Article,,卷期:2009年27-4]
- The authors report on the depth-resolved cathodoluminescence spectroscopy studies of the surface, bulk, and interface-localized electronic states in the band gap of epitaxial BiFeO3 thin films. The BiFeO3 films show a ne...
- Diffraction studies of submonolayer Sr structures on the Si (001) surface
[作者:Reiner, JW; Segal, Y; Garrity, KF; Hong, H; Ismail-Beigi, S; Ahn, CH; Walker, FJ,期刊:Journal Of Vacuum Science & Technology B, 页码:2015-2019 , 文章类型: Article,,卷期:2009年27-4]
- Using electron and synchrotron x-ray diffraction, the authors investigate the reconstructions induced on the Si (001) surface by the presence of a submonolayer of Sr atoms. These Sr surface phases on Si (001) are the fir...
- In0.53Ga0.47As n-metal-oxide-semiconductor field effect transistors with atomic layer deposited Al2O3, HfO2, and LaAlO3 gate dielectrics
[作者:Zhao, H; Yum, JH; Chen, YT; Lee, JC,期刊:Journal Of Vacuum Science & Technology B, 页码:2024-2027 , 文章类型: Article,,卷期:2009年27-4]
- The authors have fabricated In0.53Ga0.47As metal-oxide-semiconductor transistors and studied the effects of different atomic layer deposited (ALD) gate dielectrics (Al2O3, HfO2, and LaAlO3) on device performance includin...
- Ultralow resistance, nonalloyed Ohmic contacts to n-InGaAs
[作者:Baraskar, AK; Wistey, MA; Jain, V; Singisetti, U; Burek, G; Thibeault, BJ; Lee, YJ; Gossard, AC; Rodwell, MJW,期刊:Journal Of Vacuum Science & Technology B, 页码:2036-2039 , 文章类型: Article,,卷期:2009年27-4]
- The authors report ultralow specific contact resistivity (rho(c)) in nonalloyed, in situ Ohmic contacts to heavily doped n-type In0.53Ga0.47As:Si layers with 6x10(19) cm(-3) active carrier concentration, lattice matched ...
- Electrical transport in GaN nanowires grown by selective epitaxy
[作者:Talin, AA; Swartzentruber, BS; Leonard, F; Wang, X; Hersee, SD,期刊:Journal Of Vacuum Science & Technology B, 页码:2040-2043 , 文章类型: Article,,卷期:2009年27-4]
- The authors report on the electrical transport characteristics of undoped, n-doped, and pn-junction GaN nanowires grown by selective epitaxy on GaN/sapphire substrates. The selective epitaxy is realized by a combination ...
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