- Leakage current effects on C-V plots of high-k metal-oxide-semiconductor capacitors
[作者:Lu, Y; Hall, S; Tan, LZ; Mitrovic, IZ; Davey, WM; Raeissi, B; Engstrom, O; Cherkaoui, K; Monaghan, S; Hurley, PK; Gottlob, HDB; Lemme, MC,期刊:Journal Of Vacuum Science & Technology B, 页码:352-355 , 文章类型: Article,,卷期:2009年27-1]
- With the employment of ultrathin, high dielectric constant gate materials in advanced semiconductor technology, the conventional capacitance-voltage measurement technique exhibits a series of anomalies. In particular, a ...
- Peculiar characteristics of nanocrystal memory cells programming window
[作者:Gasperin, A; Amat, E; Martin, J; Porti, M; Nafria, M; Paccagnella, A,期刊:Journal Of Vacuum Science & Technology B, 页码:512-516 , 文章类型: Article,,卷期:2009年27-1]
- In this work the authors study nanocrystal memory cells, focusing on a peculiar characteristic of these devices: the programming window measured in subthreshold region is larger than that measured in linear region. For c...
- Plasma-surface interactions of advanced photoresists with C4F8/Ar discharges: Plasma parameter dependencies
[作者:Engelmann, S; Bruce, RL; Sumiya, M; Kwon, T; Phaneuf, R; Oehrlein, GS; Andes, C; Graves, D; Nest, D; Hudson, EA,期刊:Journal Of Vacuum Science & Technology B, 页码:92-106 , 文章类型: Article,,卷期:2009年27-1]
- One recurring problem in nanoscale processing is roughening of photoresist (PR) materials during plasma etch. We studied the plasma etch behavior of 248 nm PR, 193 nm PR, and poly methyladamantyl methacrylate while chang...
- Predeposition plasma nitridation process applied to Ge substrates to passivate interfaces between crystalline-Ge substrates and Hf-based high-K dielectrics
[作者:Lucovsky, G; Long, JP; Chung, KB; Seo, H; Watts, B; Vasic, R; Ulrich, MD,期刊:Journal Of Vacuum Science & Technology B, 页码:294-299 , 文章类型: Article,,卷期:2009年27-1]
- Interfaces between crystalline-Si and high-K Hf-based oxide gate dielectrics have a lower-K interfacial transition region (ITR), generally 0.6-0.8 nm SiON, which prevents reactions between Si and Hf precursors used in fi...
- Correlation of microscopic and macroscopic electrical characteristics of high-k ZrSixO2-x thin films using tunneling atomic force microscopy
[作者:Weinreich, W; Wilde, L; Kucher, P; Lemberger, M; Yanev, V; Rommel, M; Bauer, AJ; Erben, E; Heitmann, J; Schroder, U; Oberbeck, L,期刊:Journal Of Vacuum Science & Technology B, 页码:364-368 , 文章类型: Article,,卷期:2009年27-1]
- Tunneling atomic force microscopy (TUNA) is used to identify leakage current characteristics in SiO2 doped ZrO2 thin films within the nanometer scale. TUNA current maps and local TUNA I-V curves provide similar tendencie...
- Physicochemical and electrical characterizations of atomic layer deposition grown HfO2 on TiN and Pt for metal-insulator-metal application
[作者:Jorel, C; Vallee, C; Gourvest, E; Pelissier, B; Kahn, M; Bonvalot, M; Gonon, P,期刊:Journal Of Vacuum Science & Technology B, 页码:378-383 , 文章类型: Article,,卷期:2009年27-1]
- This work reports on the study of two HfO2 metal-insulator-metal structures using two different bottom metal electrodes: Pt and TiN. Different spectroscopic techniques had been used for the physicochemical characterizati...
- Hafnium oxide thin films: Effect of growth parameters on oxygen and hafnium vacancies
[作者:Hildebrandt, E; Kurian, J; Zimmermann, J; Fleissner, A; von Seggern, H; Alff, L,期刊:Journal Of Vacuum Science & Technology B, 页码:325-328 , 文章类型: Article,,卷期:2009年27-1]
- Thin films of hafnium oxide were grown by reactive molecular beam epitaxy. The growth parameters, substrate temperature, and oxidation conditions were varied in a wide range in order to investigate their influence on the...
- Comparison of standard macroscopic and conductive atomic force microscopy leakage measurements on gate removed high-k capacitors
[作者:Polspoel, W; Vandervorst, W; Aguilera, L; Porti, M; Nafria, M; Aymerich, X,期刊:Journal Of Vacuum Science & Technology B, 页码:356-359 , 文章类型: Article,,卷期:2009年27-1]
- Understanding the origin and mechanism of detrimental local phenomena such as charge trapping, trap assisted tunneling, and breakdown in high-k gate oxides adds to the improvement of refining the layer deposition process...
- Development of a conductive atomic force microscope with a logarithmic current-to-voltage converter for the study of metal oxide semiconductor gate dielectrics reliability
[作者:Aguilera, L; Lanza, M; Bayerl, A; Porti, M; Nafria, M; Aymerich, X,期刊:Journal Of Vacuum Science & Technology B, 页码:360-363 , 文章类型: Article,,卷期:2009年27-1]
- A new configuration of conductive atomic force microscope (CAFM) is presented, which is based in a conventional AFM with a logarithmic current-to-voltage (log I-V) amplifier. While a standard CAFM allows to measure a cur...
- Electrical properties of thin zirconium and hafnium oxide high-k gate dielectrics grown by atomic layer deposition from cyclopentadienyl and ozone precursors
[作者:Duenas, S; Castan, H; Garcia, H; Gomez, A; Bailon, L; Kukli, K; Niinisto, J; Ritala, M; Leskela, M,期刊:Journal Of Vacuum Science & Technology B, 页码:389-393 , 文章类型: Article,,卷期:2009年27-1]
- ZrO2 and reference HfO2 films grown by atomic layer deposition from metal cyclopentadienyls and ozone as precursors to thicknesses ranging from 3.6 to 13.1 nm on etched silicon showed electrical characteristics adequate ...
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